Characterizing absorption and total scattering losses on optical components for 193-nm wafer steppers

1999 ◽  
Author(s):  
Klaus R. Mann ◽  
Oliver Apel ◽  
Eric Eva
Keyword(s):  
Optical Components ◽  
Total Scattering ◽  
193 Nm ◽  
Scattering Losses

Investigation on total scattering at 157 nm and 193 nm

2000 ◽  
Author(s):  
Puja Kadkhoda ◽  
Herbert Welling ◽  
Stefan Guenster ◽  
Detlev Ristau
Keyword(s):  
Total Scattering ◽  
193 Nm

Scatter analysis of optical components from 193 nm to 13.5 nm

2005 ◽  
Author(s):  
Sven Schroeder ◽  
Mathias Kamprath ◽  
Stefan Gliech ◽  
Angela Duparre
Keyword(s):  
Optical Components ◽  
193 Nm

Photoreactions in Polyalkylsilynes Induced by ArF-Laser Irradiation

1990 ◽  
Vol 204 ◽  
Author(s):  
R. R. Kunz ◽  
P. A. Bianconi ◽  
M. W. Horn ◽  
D. A. Smith ◽  
C. A. Freed
Keyword(s):  
Thin Film ◽  
Thin Films ◽  
Laser Irradiation ◽  
Alkyl Group ◽  
Optical Components ◽  
X Ray ◽  
Oxygen Coordination ◽  
Bond Scission ◽  
Deep Uv ◽  
193 Nm

ABSTRACTPhotoreactions in polyalkylsilyne thin films induced by ArFlaser (193 nm) irradiation have been examined. Photoexcitation of the σ-conjugated Si-network at 193 nm (6.42 eV) results in Si-Si bond scission and alkyl-group desorption when irradiated in a vacuum. In addition to these processes, efficient (up to 7% quantum efficiency) insertion of oxygen into the Si backbone occurs when the irradiation is performed in air, resulting in the formation of a siloxane. Both infrared and X-ray photoelectron spectroscopies indicate a higher oxygen coordination about the Si atoms in the oxidized product than observed for linear polysilanes. This higher oxygen coordination indicates a siloxane network. The polysilynes have been demonstrated as deep UV photoresists and may have additional applications as precursors for thin film or binary optical components.

Long-term test and characterization of optical components at 193 nm and 157 nm

2000 ◽  
Author(s):  
Klaus Vogler ◽  
Ingo Klaft ◽  
Thomas Schroeder ◽  
Uwe Stamm ◽  
Klaus R. Mann ◽  
...  
Keyword(s):  
Optical Components ◽  
193 Nm

Testing of optical components for microlithography at 193-nm and 157-nm

2001 ◽  
Author(s):  
Klaus R. Mann ◽  
Oliver Apel ◽  
G. Eckert ◽  
Christian Goerling ◽  
Uwe Leinhos ◽  
...  
Keyword(s):  
Optical Components ◽  
193 Nm

Preparation of Thin Cadmium Telluride Samples for Electron Microscope Studies

1974 ◽  
Vol 32 ◽  
pp. 548-549
Author(s):  
T. J. Magee ◽  
J. Peng ◽  
J. Bean
Keyword(s):  
Electron Microscope ◽  
Sulfuric Acid ◽  
Solid State ◽  
Sample Preparation ◽  
Cadmium Telluride ◽  
Potassium Dichromate ◽  
Optical Components ◽  
The Past ◽  
Solid State Devices

Cadmium telluride has become increasingly important in a number of technological applications, particularly in the area of laser-optical components and solid state devices, Microstructural characterizations of the material have in the past been somewhat limited because of the lack of suitable sample preparation and thinning techniques. Utilizing a modified jet thinning apparatus and a potassium dichromate-sulfuric acid thinning solution, a procedure has now been developed for obtaining thin contamination-free samples for TEM examination.

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