scholarly journals Crystallinities and light-emitting properties of nanostructured SiGe alloy prepared by pulsed laser ablation in inert background gases

1999 ◽  
Author(s):  
Takehito Yoshida ◽  
Yuka Yamada ◽  
Nobuyasu Suzuki ◽  
Toshiharu Makino ◽  
Takaaki Orii ◽  
...  
Keyword(s):  
Laser Ablation ◽  
Pulsed Laser ◽  
Pulsed Laser Ablation ◽  
Light Emitting ◽  
Sige Alloy

Semiconductor nanocrystallite formation using inert gas ambient pulsed laser ablation and its application to light-emitting devices

1999 ◽  
Author(s):  
Takehito Yoshida ◽  
Yuka Yamada ◽  
Nobuyasu Suzuki ◽  
Toshiharu Makino ◽  
Takaaki Orii ◽  
...  
Keyword(s):  
Laser Ablation ◽  
Pulsed Laser ◽  
Pulsed Laser Ablation ◽  
Inert Gas ◽  
Light Emitting ◽  
Light Emitting Devices

Light Emitting Properties of Silicon Nanocrystallite Layer Synthesized by Pulsed Laser Ablation in Inert Background Gas

1999 ◽  
Author(s):  
Takehito Yoshida ◽  
Yuka Yamada ◽  
Nobuyasu Suzuki ◽  
Toshiharu Makino ◽  
Seinosuke Onari
Keyword(s):  
Laser Ablation ◽  
Pulsed Laser ◽  
Pulsed Laser Ablation ◽  
Light Emitting ◽  
Background Gas

Silicon Nanocrystallite Light Emitting Devices Fabricated by Full Pulsed-Laser-Ablation Process

2000 ◽  
Vol 638 ◽  
Author(s):  
Yuka Yamada ◽  
Toshiharu Makino ◽  
Nobuyasu Suzuki ◽  
Takehito Yoshida
Keyword(s):  
Laser Ablation ◽  
Energy Gap ◽  
Pulsed Laser ◽  
Pulsed Laser Ablation ◽  
Light Emitting ◽  
Light Emitting Devices ◽  
Si Substrates ◽  
Laser Ablation Process ◽  
Active Layers ◽  
Narrow Bandwidth

AbstractWe have developed silicon (Si) nanocrystallite light-emitting devices synthesized by a novel integrated process in which a size-controlling unit of differential mobility analyzer (DMA) is combined to a nanocrystallite formation unit of pulsed laser ablation (PLA). The size-controlled Si nanocrystallites as active layers have been deposited on Si substrates, and have been covered with stoichiometric indium oxide (In2O3) thin films synthesized also by the PLA process. The electroluminescence (EL) spectra had a narrow bandwidth of 0.15 eV peaked at slightly higher energy region (1.17 eV) than the bulk Si energy gap (1.10 eV), at room temperature.

Epitaxial Oxide Thin-Film Phosphors for Low Voltage FED Applications

2000 ◽  
Vol 621 ◽  
Author(s):  
Yong Eui Lee ◽  
David P. Norton ◽  
John D. Budai ◽  
Philip D. Rack ◽  
Jeffrey Peterson ◽  
...  
Keyword(s):  
Thin Film ◽  
Laser Ablation ◽  
Low Voltage ◽  
Green Light ◽  
Pulsed Laser ◽  
Pulsed Laser Ablation ◽  
Oxide Thin Film ◽  
Light Emitting ◽  
Zinc Gallate ◽  
Epitaxial Oxide

ABSTRACTEpitaxial ZnGa2O4 and Sr2CeO4 thin-film phosphors were successfully grown on (100) MgO, YSZ, and SrTiO3 single crystal substrates using pulsed laser ablation. Cathodoluminescence efficiency was remarkably enhanced by adding lithium in the ZnGa2O4 and ZnGa2O4:Mn for both blue and green light emitting thin-film phosphors. The highest efficiencies, in this experiment, were 0.35 and 0.29 lm/W at 1kV for as-deposited blue and green zinc gallate phosphor films, respectively. In case of Sr2CeO4 films, the highest luminescence was 0.14 lm/W at 1kV and 0.26 A/m2 for films annealed at 1000°C in air.

Observations on the growth of YBa2Cu3O7-δ thin films on MgO by pulsed-laser ablation

1991 ◽  
Vol 49 ◽  
pp. 1068-1069
Author(s):  
M. Grant Norton ◽  
C. Barry Carter
Keyword(s):  
Thin Film ◽  
Thin Films ◽  
Laser Ablation ◽  
Substrate Surface ◽  
Pulsed Laser ◽  
Pulsed Laser Ablation ◽  
Thin Film Deposition ◽  
Film Deposition ◽  
Laser Ablation Process ◽  
Deposition Parameters

Pulsed-laser ablation has been widely used to produce high-quality thin films of YBa2Cu3O7-δ on a range of substrate materials. The nonequilibrium nature of the process allows congruent deposition of oxides with complex stoichiometrics. In the high power density regime produced by the UV excimer lasers the ablated species includes a mixture of neutral atoms, molecules and ions. All these species play an important role in thin-film deposition. However, changes in the deposition parameters have been shown to affect the microstructure of thin YBa2Cu3O7-δ films. The formation of metastable configurations is possible because at the low substrate temperatures used, only shortrange rearrangement on the substrate surface can occur. The parameters associated directly with the laser ablation process, those determining the nature of the process, e g. thermal or nonthermal volatilization, have been classified as ‘primary parameters'. Other parameters may also affect the microstructure of the thin film. In this paper, the effects of these ‘secondary parameters' on the microstructure of YBa2Cu3O7-δ films will be discussed. Examples of 'secondary parameters' include the substrate temperature and the oxygen partial pressure during deposition.

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