Thin films of LiNb 0.5 Ta 0.5 O 3 prepared on SiO 2 /Si substrates by sol-gel processing

1999 ◽  
Author(s):  
Shi De Cheng ◽  
Chan Hin Kam ◽  
Yan Zhou ◽  
Yee Loy Lam ◽  
Yuen Chuen Chan ◽  
...  
Keyword(s):  
Thin Films ◽  
Sol Gel ◽  
Si Substrates ◽  
Gel Processing

Phase transition and piezoelectricity of sol–gel-processed Sm-doped BiFeO3 thin films on Pt(111)/Ti/SiO2/Si substrates

2015 ◽  
Vol 3 (9) ◽  
pp. 2115-2122 ◽  
Author(s):  
Wei Sun ◽  
Jing-Feng Li ◽  
Qi Yu ◽  
Li-Qian Cheng
Keyword(s):  
Thin Films ◽  
Phase Transition ◽  
Sol Gel ◽  
Orthorhombic Phase ◽  
High Quality ◽  
Si Substrates ◽  
Bifeo3 Thin Films ◽  
Gel Processing

We prepared high-quality Bi1−xSmxFeO3 films on Pt(111)/Ti/SiO2/Si substrates by sol–gel processing and found rhombohedral–orthorhombic phase transition with enhanced piezoelectricity.

Synthesis and Ferroelectric Properties of Sol–Gel Derived Intergrowth-Superlattice-Structured SrBi4Ti4O15-Bi4Ti3O12 Thin Films

2011 ◽  
Vol 197-198 ◽  
pp. 1781-1784
Author(s):  
Hua Wang ◽  
Jian Li ◽  
Ji Wen Xu ◽  
Ling Yang ◽  
Shang Ju Zhou
Keyword(s):  
Thin Films ◽  
Remanent Polarization ◽  
Annealing Temperature ◽  
Ferroelectric Properties ◽  
Sol Gel ◽  
Hysteresis Loops ◽  
Si Substrates ◽  
Gel Processing ◽  
Coercive Electric Field ◽  
Clockwise Hysteresis

Intergrowth-superlattice-structured SrBi4Ti4O15–Bi4Ti3O12(SBT–BIT) films prepared on p-Si substrates by sol-gel processing. Synthesized SBT–BIT films exhibit good ferroelectric properties. As the annealing temperature increases from 600°C to 700°C, the remanent polarization Prof SBT–BIT films increases, while the coercive electric field Ecdecreases. SBT–BIT films annealed at 700°C have a Prvalue of 18.9µC/cm2which is higher than that of SBT (16.8µC/cm2) and BIT (14.6µC/cm2), and have the lowest Ecof 142 kV/cm which is almost the same as that of SBT and BIT. The C-V curves of Ag/SBT-BIT/p-Si heterostructures show the clockwise hysteresis loops which reveal the memory effect due to the polarization. The memory window in C-V curve of Ag/SBT-BIT/p-Si is larger than that of Ag/SBT/p-Si heterostructure or Ag/BIT/p-Si heterostructure.

Characteristics of Intergrown Superlattice Bismuth-Layered-Structure Ferroelectrics Thin Films Prepared by Sol-Gel Method

2011 ◽  
Vol 197-198 ◽  
pp. 503-506
Author(s):  
Hua Wang ◽  
Jian Li ◽  
Ji Wen Xu ◽  
Ling Yang ◽  
Ming Fang Ren
Keyword(s):  
Thin Films ◽  
Hysteresis Loop ◽  
Layered Structure ◽  
Ferroelectric Properties ◽  
Sol Gel ◽  
Ferroelectric Thin Films ◽  
Memory Window ◽  
Si Substrates ◽  
Fatigue Endurance ◽  
Gel Processing

Intergrown superlattice Bi3TiNbO9–Bi4Ti3O12(BTN–BIT) and SrBi4Ti4O15–Bi4Ti3O12(SBT–BIT) ferroelectric thin films have been prepared on p-Si substrates by sol-gel processing. The precursor thin films are crystallized in the desired intergrown superlattice BTN–BIT and SBT–BIT structures annealed at 700°C. Synthesized BTN–BIT and SBT-BIT thin films exhibited good ferroelectric properties and excellence fatigue endurance. BTN–BIT thin films showed a Prvalue approximately 19.1µC/cm2and a memory window of 0.7V. Although a little smaller Prvalue and memory window were observed for the SBT–BIT thin films, the squareness of a P–E hysteresis loop was superior to that of BTN–BIT thin films. Also, the SBT–BIT thin films had more excellence fatigue endurance compared with BTN–BIT thin films.

Fabrication of Sr2Nb2O7 thin films by sol-gel processing

1995 ◽  
Vol 10 (3) ◽  
pp. 704-707 ◽  
Author(s):  
Alamanda V. Prasadarao ◽  
Ulagaraj Selvaraj ◽  
Sridhar Komarnenici
Keyword(s):  
Thin Films ◽  
Perovskite Phase ◽  
Sol Gel ◽  
Precursor Solution ◽  
Si Substrates ◽  
Niobium Ethoxide ◽  
First Time ◽  
Gel Processing ◽  
Room Temperature Dielectric Constant ◽  
Sem Microstructure

Sol-gel Sr2Nb2O7 thin films were deposited on Si(100) and Pt-coated Si substrates for the first time by spin-coating. The Sr2Nb2O7 precursor solution was prepared from strontium metal dissolved in 2-methoxyethanol, acetylacetone, and niobium ethoxide. The formation of phase pure Sr2Nb2O7 occurred via an intermediate perovskite phase of composition close to Sr0.82NbO3. Crack-free Sr2Nb2O7 films of ∼0.4 μm thickness were deposited on these substrates using a single-coating followed by heat treatment at 850 °C for 12 h. SEM microstructure and thin film XRD results indicated the deposition of a grain-oriented film on the Pt-coated Si substrate. The room temperature dielectric constant and the loss values of the film measured at 10 kHz are 45 and 0.045, respectively.

Structure and electrical properties of CuAlO2 thin films derived by sol–gel processing

2010 ◽  
Vol 22 (6) ◽  
pp. 666-671 ◽  
Author(s):  
Si-Jia Liu ◽  
Hua Wang ◽  
Ji-Wen Xu ◽  
Ming-Fang Ren ◽  
Ling Yang ◽  
...  
Keyword(s):  
Thin Films ◽  
Electrical Properties ◽  
Sol Gel ◽  
Gel Processing

Submicrometric gratings fabrication from photosensitive organo-silica-hafnia thin films elaborated by sol–gel processing

2012 ◽  
Vol 520 (19) ◽  
pp. 6050-6056 ◽  
Author(s):  
Janyce Franc ◽  
Vincent Barnier ◽  
Francis Vocanson ◽  
Emilie Gamet ◽  
Maryline Lesage ◽  
...  
Keyword(s):  
Thin Films ◽  
Sol Gel ◽  
Gel Processing

Solution-sol-gel processing of lead magnesium niobate thin films

1990 ◽  
Vol 12 (2) ◽  
pp. 29-34 ◽  
Author(s):  
P. Ravindranathan ◽  
S. Komarneni ◽  
A. S. Bhalla ◽  
L. E. Cross ◽  
R. Roy
Keyword(s):  
Thin Films ◽  
Sol Gel ◽  
Lead Magnesium Niobate ◽  
Magnesium Niobate ◽  
Lead Magnesium ◽  
Gel Processing

The preparation of PbTiO3 thin films by sol-gel processing

1993 ◽  
Vol 35 (3) ◽  
pp. 259-263 ◽  
Author(s):  
Liu Meidong ◽  
Wang Peiying ◽  
Wu Guoan ◽  
Rao Yunhua
Keyword(s):  
Thin Films ◽  
Sol Gel ◽  
Gel Processing

A Study on the Piezoelectric Properties of PZT and Doped PZT Thin Films by Sol-Gel Method

2010 ◽  
Vol 663-665 ◽  
pp. 650-653
Author(s):  
Jin Moo Byun ◽  
Jeong Sun Han ◽  
Jae Hyoung Park ◽  
Seong Eui Lee ◽  
Hee Chul Lee
Keyword(s):  
Thin Films ◽  
Piezoelectric Coefficient ◽  
Energy Harvester ◽  
Sol Gel ◽  
Pure Perovskite Structure ◽  
Pzt Thin Films ◽  
Gel Method ◽  
Sol Gel Method ◽  
Si Substrates ◽  
Pzt Thin Film

This study examined the effect of crystalline orientation and dopants such as Nb and Zn on the piezoelectric coefficient of sol-gel driven Pb1(Zr0.52Ti0.48)O3(PZT) and doped PZT thin films. Crack-free 1-μm-thick PZT and doped PZT thin films prepared by using 2-Methoxyethanol-based sol-gel method were fabricated on Pt/Ti/SiO2/Si substrates. The highly (111) oriented PZT thin films of pure perovskite structure could be obtained by controlling various parameters such as a PbTiO3 seed layer and a concentration of sol-gel solution. The Nb-Zn doped PZT thin films exhibited high piezoelectric coefficient which was about 50 % higher than that of undoped PZT thin film. The highest measured piezoelectric coefficient was 240 pC/N, which could be applicable to piezoelectrically operated MEMS actuator, sensor, or energy harvester devices.

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