Anisotropic enhancement of flux pinning in Y-Ba-Cu-O thin films grown by the step-flow growth mode

1998 ◽  
Author(s):  
Hanns-Ulrich Habermeier ◽  
T. Haage ◽  
Jorg Zegenhagen ◽  
V. G. Hadjev ◽  
R. Warthmann ◽  
...  
Keyword(s):  
Thin Films ◽  
Flux Pinning ◽  
Growth Mode ◽  
Step Flow ◽  
Step Flow Growth

ANISOTROPIC ENHANCEMENT OF FLUX PINNING IN Y-BA-CU-O THIN FILMS GROWN BY THE STEP FLOW GROWTH MODE

2000 ◽  
Author(s):  
H. -U. HABERMEIER ◽  
T. HAAGE ◽  
A. S. SOLOVJOV ◽  
V. HADJEV ◽  
R WARTHMANN ◽  
...  
Keyword(s):  
Thin Films ◽  
Flux Pinning ◽  
Growth Mode ◽  
Step Flow ◽  
Step Flow Growth

Diverse effects of two-dimensional and step flow growth mode induced microstructures on the magnetic anisotropies of SrRuO3 thin films

2006 ◽  
Vol 89 (12) ◽  
pp. 124104 ◽  
Author(s):  
Y. Z. Yoo ◽  
O. Chmaissem ◽  
S. Kolesnik ◽  
A. Ullah ◽  
L. B. Lurio ◽  
...  
Keyword(s):  
Thin Films ◽  
Growth Mode ◽  
Two Dimensional ◽  
Step Flow ◽  
Step Flow Growth

scholarly journals Single-Domain and Atomically Flat Surface of κ-Ga2O3 Thin Films on FZ-Grown ε-GaFeO3 Substrates via Step-Flow Growth Mode

ACS Omega ◽  
2020 ◽  
Vol 5 (45) ◽  
pp. 29585-29592
Author(s):  
Hiroyuki Nishinaka ◽  
Osamu Ueda ◽  
Daisuke Tahara ◽  
Yusuke Ito ◽  
Noriaki Ikenaga ◽  
...  
Keyword(s):  
Thin Films ◽  
Flat Surface ◽  
Single Domain ◽  
Growth Mode ◽  
Step Flow ◽  
Step Flow Growth ◽  
Atomically Flat

Effects of Ru vacancies and oxygen synthesis pressures on the formation of nanodomain structures in SrRuO3 thin films

2005 ◽  
Vol 875 ◽  
Author(s):  
Y. Z. Yoo ◽  
O. Chmaissem ◽  
S. Kolesnik ◽  
B. Dabrowski ◽  
C. W. Kimball ◽  
...  
Keyword(s):  
Thin Films ◽  
Growth Mode ◽  
Island Growth ◽  
Working Pressure ◽  
Step Flow ◽  
Partial Pressures ◽  
Out Of Plane ◽  
Growth Properties ◽  
Step Flow Growth ◽  
Low Pressures

AbstractSrRuO3 (SRO) thin films were grown on SrTiO3 (100) substrates using the pulsed laser deposition method. The films' growth properties widely changed in response to different working oxygen partial pressures. An island growth mode was dominant for low pressures up to 10 mTorr followed by a step flow growth mode at 60 mTorr and step flow plus 2 D growth at 200 mTorr then reverting back to island growth at 300 mTorr. Significant out-of-plane strains of SRO films were observed for low growth pressures (up to 10 mTorr) but became notably reduced at 60 mTorr and continued to decrease gradually with further pressure increases. Formation of Ru vacancies occurs regardless of the working pressure values and appears to be minimized at 60 mTorr. Highest TC's were obtained in films exhibiting the step flow growth mode. The role of Ru deficiencies in relation to strain, growth mode, and magnetic properties is discussed.

Step-flow growth of perovskite PbTiO 3 thin films epitaxially grown on a miscut SrTiO 3 substrate

1998 ◽  
Author(s):  
Kiyotaka Wasa ◽  
Yoko Haneda ◽  
Toshifumi Sato ◽  
Hideaki Adachi ◽  
Isaku Kanno ◽  
...  
Keyword(s):  
Thin Films ◽  
Step Flow ◽  
Step Flow Growth

HCl Assisted Growth of Thick 4H-SiC Epilayers for Bipolar Devices

2014 ◽  
Vol 778-780 ◽  
pp. 210-213
Author(s):  
Birgit Kallinger ◽  
Christian Ehlers ◽  
Patrick Berwian ◽  
Mathias Rommel ◽  
Jochen Friedrich
Keyword(s):  
Hydrogen Chloride ◽  
Point Defects ◽  
Growth Rates ◽  
High Growth ◽  
Growth Mode ◽  
Step Flow ◽  
Bipolar Devices ◽  
Step Flow Growth ◽  
Total Concentrations

The addition of hydrogen chloride (HCl) to our conventional CVD process allows for high growth rates up to 50 μm/h while maintaining the step-flow growth mode. Such epilayers exhibit quite low total concentrations of point defects less than 2 x 1013 cm-3. But, the HCl addition shows an ambivalent influence on the concentration of the lifetime killer defect Z1/2. For low growth rates, the Z1/2 concentration slightly decreases with increasing HCl addition. For higher growth rates, the Z1/2 concentration increases with increasing HCl addition.

scholarly journals Growth Mode and Defects in Aluminum Nitride Sublimed on (0001) 6H-SiC Substrates

2001 ◽  
Vol 6 ◽  
Author(s):  
Lianghong Liu ◽  
B. Liu ◽  
Y. Shi ◽  
J.H. Edgar
Keyword(s):  
Thermal Expansion ◽  
Aluminum Nitride ◽  
Optical Microscopy ◽  
Thermal Expansion Coefficient ◽  
Growth Mode ◽  
Island Growth ◽  
Substrate Preparation ◽  
Step Flow ◽  
Step Flow Growth ◽  
Sublimation Growth

The effect of substrate preparation on the sublimation growth of AlN at about 1800 °C and 400 torr on (0001) 6H-SiC was investigated. The AlN grew in the step flow growth mode on an off-axis 6H-SiC substrate with a 6H-SiC epilayer, an island growth mode on as-received substrates, and a 2-D growth mode on substrates first coated with an AlN epitaxial layer by MOCVD. Cracks in the deposited AlN crystal due to the lattice and thermal expansion coefficient mismatches were always observed by SEM and optical microscopy.

Step flow growth of (La,Ca)MnOδ thin films on (110)NdGaO3

1995 ◽  
Vol 67 (22) ◽  
pp. 3272-3274 ◽  
Author(s):  
X. T. Zeng ◽  
H. K. Wong ◽  
J. B. Xu ◽  
I. H. Wilson
Keyword(s):  
Thin Films ◽  
Step Flow ◽  
Step Flow Growth

Sublimation Growth of 6H-SiC Boule on Various a-Plane Substrates

2000 ◽  
Vol 640 ◽  
Author(s):  
S. Nishino ◽  
T. Nishiguchi ◽  
Y. Masuda ◽  
M. Sasaki ◽  
S. Ohshima
Keyword(s):  
Growth Temperature ◽  
Layer Growth ◽  
Growth Mode ◽  
Layer By Layer ◽  
Step Bunching ◽  
Step Flow ◽  
Cvd Growth ◽  
The Difference ◽  
Step Flow Growth ◽  
Sublimation Growth

ABSTRACTSublimation growth of 6H-SiC was performed on {1100} and {1120} substrates. The difference between the growth on {1100} plane and {1120} plane was observed. {1100} facet was almost flat and there were grooves oriented toward <1120> direction. The step bunching was observed on {1100} plane 5° off-axis. A lot of pits were introduced on {1120} plane of the crystal grown both on {1100} and {1120} substrates. Step flow growth toward <1120> direction created the pits on {1120} plane. It was important to grow crystal by layer by layer growth on {1120} plane. By changing the growth mode from step flow growth to layer by layer growth, pit on the {1120} plane may be reduced as same as CVD growth on {1120} plane. Growth temperature and C/Si ratio should be optimized to keep layer by layer growth.

Sign in / Sign up

Export Citation Format

Share Document