Color center formation and time-resolved photoluminescence for ArF excimer laser irradiation in CaF2 single crystals

1998 ◽  
Author(s):  
Masafumi Mizuguchi ◽  
Hideo Hosono ◽  
Hiroshi Kawazoe ◽  
Toru Ogawa
Keyword(s):  
Single Crystals ◽  
Laser Irradiation ◽  
Excimer Laser ◽  
Color Center ◽  
Time Resolved ◽  
Excimer Laser Irradiation ◽  
Arf Excimer Laser ◽  
Time Resolved Photoluminescence

Surface Alteration of Amorphous Si3N4 Films by ArF Excimer Laser Irradiation

1995 ◽  
Vol 34 (Part 2, No. 11A) ◽  
pp. L1482-L1485 ◽  
Author(s):  
Kazuo Nakamae ◽  
Kou Kurosawa ◽  
Yasuo Takigawa ◽  
Wataru Sasaki ◽  
Yasukazu Izawa ◽  
...  
Keyword(s):  
Laser Irradiation ◽  
Excimer Laser ◽  
Surface Alteration ◽  
Excimer Laser Irradiation ◽  
Arf Excimer Laser ◽  
Amorphous Si3n4

Improved Abruptness of Si/Sin Interface by ArF Excimer-Laser Pre-Annealing to Sin

1994 ◽  
Vol 345 ◽  
Author(s):  
Yasutaka Uchida ◽  
Masakiyo Matsumura
Keyword(s):  
Laser Irradiation ◽  
Excimer Laser ◽  
Field Effect ◽  
Field Effect Mobility ◽  
Resolution Limit ◽  
Laser Recrystallization ◽  
Excimer Laser Irradiation ◽  
Arf Excimer Laser ◽  
Krf Excimer Laser ◽  
Film Annealing

AbstractXPS measurement showed that undesirable SiNH component was reduced drastically from the low-temperature deposited SiN surface by intense ArF excimer-laser irradiation. Although the improved layer was as thin as 15nm, it was very effective to stop diffusion of N atoms from the bottom SiN layer to the top Si layer during the excimer-laser recrystallization step. N-diffused Si layer at the Si/SiN interface was less than the XPS resolution limit for the pre-annealed SiN structure, but about 5nm thick. As a result, the field-effect mobility of the poly-Si/SiN TFT was increased drastically by laser-irradiation to SiN film. Annealing characteristics are also presented for the various SiN film thicknesses and for both the ArF and KrF excimer-laser lights.

Carbon Film Synthesis on the Water by Excimer Laser Irradiation

1998 ◽  
Vol 555 ◽  
Author(s):  
H. Hidai ◽  
H. Tokura
Keyword(s):  
Raman Spectrum ◽  
Laser Irradiation ◽  
Excimer Laser ◽  
Carbon Film ◽  
Carbon Films ◽  
Elementary Analysis ◽  
Excimer Laser Irradiation ◽  
Ft Ir ◽  
Arf Excimer Laser ◽  
Film Synthesis

AbstractWater was used as a substrate and carbon films were obtained from methane gas on the water by ArF excimer laser. The film was analyzed by a SEM, elementary analysis, Raman spectrum and FT-IR. Moreover synthesized position of the film was studied.

Whiskerlike structure growth on silicon exposed to ArF excimer laser irradiation

1996 ◽  
Vol 69 (5) ◽  
pp. 620-622 ◽  
Author(s):  
F. Sánchez ◽  
J. L. Morenza ◽  
R. Aguiar ◽  
J. C. Delgado ◽  
M. Varela
Keyword(s):  
Laser Irradiation ◽  
Excimer Laser ◽  
Excimer Laser Irradiation ◽  
Arf Excimer Laser
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