Growth and fabrication of high-performance 980-nm strained InGaAs quantum well lasers using novel hybrid material system of InGaAsP and AlGaAs

1998 ◽  
Author(s):  
Guowen Yang ◽  
ZunTu Xu ◽  
Junying Xu ◽  
Xiaoyu Ma ◽  
Jingming Zhang ◽  
...  
Keyword(s):  
Quantum Well ◽  
Hybrid Material ◽  
High Performance ◽  
Quantum Well Lasers ◽  
Material System ◽  
Ingaas Quantum Well

Growth and fabrication of high-performance 980-nm strained InGaAs quantum-well lasers for erbium-doped fiber amplifiers

1994 ◽  
Vol 30 (2) ◽  
pp. 424-440 ◽  
Author(s):  
M. Chand ◽  
S.N.G. Chu ◽  
N.K. Dutta ◽  
J. Lopata ◽  
M. Geva ◽  
...  
Keyword(s):  
Quantum Well ◽  
High Performance ◽  
Quantum Well Lasers ◽  
Fiber Amplifiers ◽  
Erbium Doped ◽  
Ingaas Quantum Well

High performance strained-layer InGaAs quantum well lasers grown on a (311)A GaAs substrate

2002 ◽  
Author(s):  
M. Takahashi ◽  
P. Vaccaro ◽  
I. Fujita ◽  
T. Watanabe ◽  
T. Egawa ◽  
...  
Keyword(s):  
Quantum Well ◽  
Gaas Substrate ◽  
High Performance ◽  
Quantum Well Lasers ◽  
Strained Layer ◽  
Ingaas Quantum Well

High performance InGaAsP/InP semiconductor quantum well lasers realized by gas source molecular beam epitaxy

1992 ◽  
Vol 2 (9) ◽  
pp. 1727-1738 ◽  
Author(s):  
A. Accard ◽  
F. Brillouet ◽  
E. Duda ◽  
B. Fernier ◽  
G. Gelly ◽  
...  
Keyword(s):  
Molecular Beam Epitaxy ◽  
Quantum Well ◽  
High Performance ◽  
Molecular Beam ◽  
Quantum Well Lasers ◽  
Gas Source ◽  
Semiconductor Quantum Well

scholarly journals Experimental and Modeling Study on the High-Performance p++-GaAs/n++-GaAs Tunnel Junctions with Silicon and Tellurium Co-Doped InGaAs Quantum Well Inserted

Crystals ◽  
2020 ◽  
Vol 10 (12) ◽  
pp. 1092
Author(s):  
Yudan Gou ◽  
Jun Wang ◽  
Yang Cheng ◽  
Yintao Guo ◽  
Xiao Xiao ◽  
...  
Keyword(s):  
Quantum Well ◽  
High Performance ◽  
High Efficiency ◽  
Tunnel Junctions ◽  
Peak Current Density ◽  
Co Doping ◽  
Trap Assisted Tunneling ◽  
Carrier Tunneling ◽  
High Concentrations ◽  
Ingaas Quantum Well

The development of high-performance tunnel junctions is critical for achieving high efficiency in multi-junction solar cells (MJSC) that can operate at high concentrations. We investigate silicon and tellurium co-doping of InGaAs quantum well inserts in p++-GaAs/n++-GaAs tunnel junctions and report a peak current density as high as 5839 A cm−2 with a series resistance of 5.86 × 10−5 Ω cm2. In addition, we discuss how device performance is affected by the growth temperature, thickness, and V/III ratio in the InGaAs layer. A simulation model indicates that the contribution of trap-assisted tunneling enhances carrier tunneling.

scholarly journals 830-nm InGaAs Quantum Well Lasers With Very Low Beam Divergence

2017 ◽  
Vol 9 (5) ◽  
pp. 1-8
Author(s):  
Bocang Qiu ◽  
Hai Martin Hu ◽  
Weimin Wang ◽  
James Ho ◽  
Wenbin Liu ◽  
...  
Keyword(s):  
Quantum Well ◽  
Quantum Well Lasers ◽  
Beam Divergence ◽  
Ingaas Quantum Well

20 000 h InGaAs quantum well lasers

1990 ◽  
Vol 26 (25) ◽  
pp. 2083 ◽  
Author(s):  
S.L. Yellen ◽  
R.G. Waters ◽  
Y.C. Chen ◽  
B.A. Soltz ◽  
S.E. Fischer ◽  
...  
Keyword(s):  
Quantum Well ◽  
Quantum Well Lasers ◽  
Ingaas Quantum Well

scholarly journals Simulation and comparision of GaAs, AlGaAs and GaInP barriers in InGaAs quantum well lasers

2019 ◽  
Vol 592 ◽  
pp. 012151
Author(s):  
Yuan Huibo ◽  
Lin Li ◽  
Lina Zeng ◽  
Jing Zhang ◽  
Zaijin Li ◽  
...  
Keyword(s):  
Quantum Well ◽  
Quantum Well Lasers ◽  
Ingaas Quantum Well
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