Controllable enhancement of spontaneous emission in perpendicular direction by single quantum well embedded in planar microcavities

1998 ◽  
Author(s):  
Hongdong Zhao ◽  
Guangdi Shen ◽  
Tao Yin ◽  
Changhua Chen ◽  
ZunTu Xu ◽  
...  
Keyword(s):  
Quantum Well ◽  
Spontaneous Emission ◽  
Perpendicular Direction ◽  
Single Quantum ◽  
Single Quantum Well

scholarly journals Strong Amplified Spontaneous Emission from High Quality GaAs1–xSbx Single Quantum Well Nanowires

2017 ◽  
Vol 121 (15) ◽  
pp. 8636-8644 ◽  
Author(s):  
Xiaoming Yuan ◽  
Dhruv Saxena ◽  
Philippe Caroff ◽  
Fan Wang ◽  
Mark Lockrey ◽  
...  
Keyword(s):  
Quantum Well ◽  
Spontaneous Emission ◽  
Amplified Spontaneous Emission ◽  
Single Quantum ◽  
High Quality ◽  
Single Quantum Well

InGaAs strained-layer single-quantum-well lasers' spontaneous emission spectra and their features

1994 ◽  
Author(s):  
E. V. Arjanov ◽  
Olga V. Danilina ◽  
Vadim P. Konyaev ◽  
Alexander S. Logginov ◽  
Vasiliy I. Shveikin ◽  
...  
Keyword(s):  
Quantum Well ◽  
Spontaneous Emission ◽  
Emission Spectra ◽  
Quantum Well Lasers ◽  
Single Quantum ◽  
Single Quantum Well ◽  
Strained Layer

Correlation between Screw Dislocations Distribution and Cathodoluminescence Spectra of InGaN Single Quantum Well Films

2008 ◽  
Vol 600-603 ◽  
pp. 1309-1312 ◽  
Author(s):  
Takaya Fujita ◽  
Takeshi Mitani ◽  
Masataka Murakami ◽  
Masanobu Yoshikawa ◽  
Hiroshi Harima
Keyword(s):  
Quantum Well ◽  
Spontaneous Emission ◽  
Average Period ◽  
Single Quantum ◽  
Single Quantum Well ◽  
Screw Dislocations ◽  
Force Microscopy ◽  
Exciton Diffusion Length ◽  
Atomic Force ◽  
Recombination Centers

We have studied InGaN single-quantum-well (SQW) films using atomic force microscopy (AFM) and cathodoluminescence (CL) spectroscopy. It has been found that a screw dislocations (SDs) distribution in the height image by AFM is well correlated with images of the CL spectra at about 440nm assigned to the spontaneous emission from the InGaN SQW. These results at least mean an existence of non-radiative recombination centers within the InGaN SQW films. It has been also found that the average period of the peak-intensity and the FWHM change is smaller than that of the peak-wavelength change assigned to InN mole fluctuations. These results suggest that the exciton diffusion length of the spontaneous emission at about 440nm is not larger than the average period of InN mole fluctuations in the InGaN SQW.

(InAs)1/(GaAs)2short period superlattice strained single quantum well laser on GaAs substrate

1993 ◽  
Vol 29 (1) ◽  
pp. 98-99 ◽  
Author(s):  
H. Kurakake ◽  
T. Uchida ◽  
H. Soda ◽  
S. Yamazaki
Keyword(s):  
Quantum Well ◽  
Gaas Substrate ◽  
Single Quantum ◽  
Single Quantum Well ◽  
Quantum Well Laser

Thermal quenching of extrinsic photoluminescence of GaAs-Ga1-x Al x As single quantum well

1988 ◽  
Vol 10 (10) ◽  
pp. 1243-1248 ◽  
Author(s):  
Y. Chen ◽  
A. Hameury ◽  
J. Massies ◽  
C. Neri
Keyword(s):  
Quantum Well ◽  
Thermal Quenching ◽  
Single Quantum ◽  
Single Quantum Well

Single quantum well diodes from GaInAsBi emitting at wavelengths up to 2.5 μm

2020 ◽  
Vol 111 ◽  
pp. 103567
Author(s):  
V. Pačebutas ◽  
B. Čechavičius ◽  
A. Krotkus
Keyword(s):  
Quantum Well ◽  
Single Quantum ◽  
Single Quantum Well
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