Microstructure of hydroxyapatite thin layers grown by pulsed laser deposition

1998 ◽  
Author(s):  
Doina Craciun ◽  
Valentin Craciun ◽  
C. Martin ◽  
Ion N. Mihailescu ◽  
M. C. Bunescu ◽  
...  
Keyword(s):  
Pulsed Laser Deposition ◽  
Pulsed Laser ◽  
Thin Layers ◽  
Laser Deposition

Droplet formation during extended time pulsed laser deposition of La0.5Sr0.5CoO3 thin layers

1999 ◽  
Vol 85 (6) ◽  
pp. 3310-3313 ◽  
Author(s):  
V. Craciun ◽  
D. Craciun ◽  
J. Perriere ◽  
I. W. Boyd
Keyword(s):  
Pulsed Laser Deposition ◽  
Pulsed Laser ◽  
Droplet Formation ◽  
Thin Layers ◽  
Laser Deposition ◽  
Extended Time

scholarly journals Pulsed Laser Deposition of Bismuth Vanadate Thin Films—The Effect of Oxygen Pressure on the Morphology, Composition, and Photoelectrochemical Performance

Materials ◽  
2020 ◽  
Vol 13 (6) ◽  
pp. 1360
Author(s):  
Konrad Trzciński ◽  
Mariusz Szkoda ◽  
Maria Gazda ◽  
Jakub Karczewski ◽  
Adam Cenian ◽  
...  
Keyword(s):  
Pulsed Laser Deposition ◽  
Oxygen Pressure ◽  
Bulk Heterojunction ◽  
Pulsed Laser ◽  
Target Surface ◽  
Thin Layers ◽  
Bismuth Vanadate ◽  
Laser Deposition ◽  
Photoelectrochemical Performance ◽  
Breakdown Spectroscopy

Thin layers of bismuth vanadate were deposited using the pulsed laser deposition technique on commercially available FTO (fluorine-doped tin oxide) substrates. Films were sputtered from a sintered, monoclinic BiVO4 pellet, acting as the target, under various oxygen pressures (from 0.1 to 2 mbar), while the laser beam was perpendicular to the target surface and parallel to the FTO substrate. The oxygen pressure strongly affects the morphology and the composition of films observed as a Bi:V ratio gradient along the layer deposited on the substrate. Despite BiVO4, two other phases were detected using XRD (X-ray diffraction) and Raman spectroscopy—V2O5 and Bi4V2O11. The V-rich region of the samples deposited under low and intermediate oxygen pressures was covered by V2O5 longitudinal structures protruding from BiVO4 film. Higher oxygen pressure leads to the formation of Bi4V2O11@BiVO4 bulk heterojunction. The presented results suggest that the ablation of the target leads to the plasma formation, where Bi and V containing ions can be spatially separated due to the interactions with oxygen molecules. In order to study the phenomenon more thoroughly, laser-induced breakdown spectroscopy measurements were performed. Then, obtained electrodes were used as photoanodes for photoelectrochemical water splitting. The highest photocurrent was achieved for films deposited under 1 mbar O2 pressure and reached 1 mA cm−2 at about 0.8 V vs Ag/AgCl (3 M KCl). It was shown that V2O5 on the top of BiVO4 decreases its photoactivity, while the presence of a bulk Bi4V2O11@BiVO4 heterojunction is beneficial in water photooxidation.

Production of biologically inert Teflon thin layers on the surface of allergenic metal objects by pulsed laser deposition technology

2003 ◽  
Vol 76 (5) ◽  
pp. 731-735 ◽  
Author(s):  
B. Hopp ◽  
T. Smausz ◽  
N. Kresz ◽  
P.M. Nagy ◽  
A. Juhász ◽  
...  
Keyword(s):  
Pulsed Laser Deposition ◽  
Pulsed Laser ◽  
Thin Layers ◽  
Laser Deposition ◽  
Deposition Technology

Pulsed laser deposition of titanium-based thin layers

2000 ◽  
Author(s):  
Boguslaw Major ◽  
Reinhold Ebner ◽  
Grzegorz Kruzel ◽  
Waldemar Wolczynski
Keyword(s):  
Pulsed Laser Deposition ◽  
Pulsed Laser ◽  
Thin Layers ◽  
Laser Deposition

Ultraviolet Assisted Pulsed Laser Deposition of Thin Oxide Films

1999 ◽  
Vol 574 ◽  
Author(s):  
V. Craciun ◽  
J. Howard ◽  
R. K. Singh
Keyword(s):  
Pulsed Laser Deposition ◽  
Indium Tin Oxide ◽  
Photoelectron Spectroscopy ◽  
Pulsed Laser ◽  
Thin Layers ◽  
Laser Deposition ◽  
Gaseous Species ◽  
X Ray ◽  
Surface Mobility ◽  
Uv Illumination

AbstractThe properties of Y2O3, ITO (indium tin oxide), and TaSi2 thin layers grown using a new in-situ ultraviolet (UV)-assisted pulsed laser deposition (UVPLD) technique have been studied. X-ray diffraction investigations showed that with respect to conventional PLD grown films under similar conditions, but without UV illumination, UVPLD grown films exhibited better crystallinity, especially for growth at low substrate temperatures, from 200 °C up to 450 °C, depending on the material. X-ray photoelectron spectroscopy investigations showed that UVPLD layers contained less physisorbed oxygen than the conventional PLD layers, exhibiting a better overall stoichiometry. These results suggest that during the ablation-growth process, UV radiation increases the surface mobility of adatoms and provides more reactive gaseous species. Both factors contribute to the crystalline growth and are especially effective at moderate processing temperatures, where the thermal energy available for the process is comparatively low.

Defects of crystal structure of Hg1−xCdxTe thin layers growing by pulsed laser deposition

2003 ◽  
Vol 208-209 ◽  
pp. 594-598 ◽  
Author(s):  
I.S. Virt ◽  
I.O. Rudyj ◽  
M.S. Frugynskiji ◽  
I.V. Kurilo ◽  
P. Sagan ◽  
...  
Keyword(s):  
Crystal Structure ◽  
Pulsed Laser Deposition ◽  
Pulsed Laser ◽  
Thin Layers ◽  
Laser Deposition
Sign in / Sign up

Export Citation Format

Share Document