Comparison of the laser performance of solid state dye media under long- and short-pulse excitation

1998 ◽  
Author(s):  
Dennis P. Pacheco ◽  
Henry R. Aldag
Keyword(s):  
Solid State ◽  
Short Pulse ◽  
Pulse Excitation ◽  
Laser Performance

Threshold current characteristics of GaAs lasers under short pulse excitation

1984 ◽  
Vol 20 (2) ◽  
pp. 63 ◽  
Author(s):  
N.A. Olsson ◽  
N.K. Dutta ◽  
W.T. Tsang ◽  
R.A. Logan
Keyword(s):  
Short Pulse ◽  
Threshold Current ◽  
Pulse Excitation ◽  
Current Characteristics

Optical Study of Localized and Delocalized States in GaAsN/GaAs

2003 ◽  
Vol 798 ◽  
Author(s):  
Z. Y. Xu ◽  
X. D. Luo ◽  
X. D. Yang ◽  
P. H. Tan ◽  
C. L. Yang ◽  
...  
Keyword(s):  
Quantum Wells ◽  
Rapid Thermal Annealing ◽  
Short Pulse ◽  
Selective Excitation ◽  
Excitation Power ◽  
Pulse Excitation ◽  
Optical Study ◽  
Time Resolved ◽  
Exciton Localization ◽  
Time Resolved Photoluminescence

ABSTRACTTaking advantages of short pulse excitation and time-resolved photoluminescence (PL), we have studied the exciton localization effect in a number of GaAsN alloys and GaAsN/GaAs quantum wells (QWs). In the PL spectra, an extra transition located at the higher energy side of the commonly reported N-related emissions is observed. By measuring PL dependence on temperature and excitation power along with PL dynamics study, the new PL peak has been identified as a transition of the band edge-related recombination in dilute GaAsN alloy and delocalized transition in QWs. Using selective excitation PL we further attribute the localized emission in QWs to the excitons localized at the GaAsN/GaAs interfaces. This interface-related exciton localization could be greatly reduced by a rapid thermal annealing.

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