scholarly journals Flip-chip-joined 8x8 array of bottom-emitting 850-nm light-emitting diodes for interconnect applications

1998 ◽  
Author(s):  
Paul L. Heremans ◽  
Patrick Merken ◽  
Jan Genoe ◽  
Reiner Windisch ◽  
Chris A. Van Hoof ◽  
...  
Keyword(s):  
Flip Chip ◽  
Light Emitting Diodes ◽  
Light Emitting

scholarly journals Graphene-Based Transparent Conducting Substrates for GaN/AlGaN Nanocolumn Flip-Chip Ultraviolet Light-Emitting Diodes

2021 ◽  
Author(s):  
Andreas Liudi Mulyo ◽  
Anjan Mukherjee ◽  
Ida Marie Høiaas ◽  
Lyubomir Ahtapodov ◽  
Tron Arne Nilsen ◽  
...  
Keyword(s):  
Ultraviolet Light ◽  
Flip Chip ◽  
Light Emitting Diodes ◽  
Light Emitting ◽  
Transparent Conducting ◽  
Ultraviolet Light Emitting Diodes

scholarly journals High-Brightness InGaN–GaN Flip-Chip Light-Emitting Diodes With Triple-Light Scattering Layers

2008 ◽  
Vol 20 (8) ◽  
pp. 659-661 ◽  
Author(s):  
Chia-En Lee ◽  
Yea-Chen Lee ◽  
Hao-Chung Kuo ◽  
Tien-Chang Lu ◽  
Shing-Chung Wang
Keyword(s):  
Light Scattering ◽  
Flip Chip ◽  
Light Emitting Diodes ◽  
High Brightness ◽  
Light Emitting

scholarly journals High-Power GaN-Based Vertical Light-Emitting Diodes on 4-Inch Silicon Substrate

Nanomaterials ◽  
2019 ◽  
Vol 9 (8) ◽  
pp. 1178 ◽  
Author(s):  
Qiang Zhao ◽  
Jiahao Miao ◽  
Shengjun Zhou ◽  
Chengqun Gui ◽  
Bin Tang ◽  
...  
Keyword(s):  
High Power ◽  
Silicon Substrate ◽  
Flip Chip ◽  
Heat Dissipation ◽  
Light Emitting Diodes ◽  
Light Output ◽  
Current Spreading ◽  
Light Emitting ◽  
Fabry Perot ◽  
Lift Off

We demonstrate high-power GaN-based vertical light-emitting diodes (LEDs) (VLEDs) on a 4-inch silicon substrate and flip-chip LEDs on a sapphire substrate. The GaN-based VLEDs were transferred onto the silicon substrate by using the Au–In eutectic bonding technique in combination with the laser lift-off (LLO) process. The silicon substrate with high thermal conductivity can provide a satisfactory path for heat dissipation of VLEDs. The nitrogen polar n-GaN surface was textured by KOH solution, which not only improved light extract efficiency (LEE) but also broke down Fabry–Pérot interference in VLEDs. As a result, a near Lambertian emission pattern was obtained in a VLED. To improve current spreading, the ring-shaped n-electrode was uniformly distributed over the entire VLED. Our combined numerical and experimental results revealed that the VLED exhibited superior heat dissipation and current spreading performance over a flip-chip LED (FCLED). As a result, under 350 mA injection current, the forward voltage of the VLED was 0.36 V lower than that of the FCLED, while the light output power (LOP) of the VLED was 3.7% higher than that of the FCLED. The LOP of the FCLED saturated at 1280 mA, but the light output saturation did not appear in the VLED.

Enhanced output of flip-chip light-emitting diodes with a sidewall reflector

2007 ◽  
Vol 51 (5) ◽  
pp. 674-677 ◽  
Author(s):  
Yanxu Zhu ◽  
Chen Xu ◽  
Xiaoli Da ◽  
Ting Liang ◽  
Jianming Zhang ◽  
...  
Keyword(s):  
Flip Chip ◽  
Light Emitting Diodes ◽  
Light Emitting
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