Ultralow-threshold 850-nm oxide-apertured vertical-cavity lasers using AlInGaAs/AlGaAs strained active layers
1997 ◽
Vol 9
(7)
◽
pp. 863-865
◽
Keyword(s):
Keyword(s):
Keyword(s):
1994 ◽
1997 ◽
Vol 9
(8)
◽
pp. 1060-1062
◽
2010 ◽
Vol 59
(1)
◽
pp. 67-72
◽
Keyword(s):
1998 ◽
Vol 34
(10)
◽
pp. 1904-1913
◽
Keyword(s):