RF magnetron sputtering deposition of CdTe passivation on HgCdTe

1998 ◽  
Author(s):  
Jaroslaw Rutkowski ◽  
Krzysztof Adamiec ◽  
Antoni Rogalski
Keyword(s):  
Magnetron Sputtering ◽  
Rf Magnetron Sputtering ◽  
Sputtering Deposition ◽  
Cdte Passivation

Antibacterial property of CuCrO2 thin films prepared by RF magnetron sputtering deposition

Vacuum ◽  
2013 ◽  
Vol 87 ◽  
pp. 174-177 ◽  
Author(s):  
Te-Wei Chiu ◽  
Yung-Chin Yang ◽  
An-Chou Yeh ◽  
Yung-Po Wang ◽  
Yi-Wei Feng
Keyword(s):  
Thin Films ◽  
Magnetron Sputtering ◽  
Antibacterial Property ◽  
Rf Magnetron Sputtering ◽  
Sputtering Deposition

Epitaxial Growth and Electrical Characterization of PBZT Thin Films by RF Magnetron Sputtering Deposition

2007 ◽  
Vol 336-338 ◽  
pp. 173-176
Author(s):  
Hui Qing Fan ◽  
Lai Jun Liu ◽  
Xiu Li Chen ◽  
Jie Zhang ◽  
Wei Wang
Keyword(s):  
Thin Films ◽  
Magnetron Sputtering ◽  
Lead Zirconate Titanate ◽  
Pyrochlore Phase ◽  
Electrical Characterization ◽  
Rf Magnetron Sputtering ◽  
Lead Zirconate ◽  
Sputtering Deposition ◽  
Si Substrates ◽  
Ferroelectric Hysteresis

Barium modified lead zirconate titanate (PBZT) thin films were grown epitaxially on Pt/Ti/SiO2/Si substrates by radio-frequency magnetron sputtering deposition and characterized by X-ray diffraction and scanning electron microscopy. Depending on the growth condition, a wide variation of crystal structure and morphology was evolved in PBZT thin films. The formation of phase structure and pyrochlore phase was strongly dependent on the oxygen partial pressure and re-evaporation of lead from the films during the deposition. Perovskite films were obtained by optimizing the deposition conditions and analyzed by the ferroelectric hysteresis (P~E).

Orientation Control of Lead Zirconate Titanate Film by Combination of Sol-Gel and Sputtering Deposition

2005 ◽  
Vol 20 (1) ◽  
pp. 243-246 ◽  
Author(s):  
Chee-Sung Park ◽  
Sang-Wook Kim ◽  
Gun-Tae Park ◽  
Jong-Jin Choi ◽  
Hyoun-Ee Kim
Keyword(s):  
Magnetron Sputtering ◽  
Lead Zirconate Titanate ◽  
Seed Layer ◽  
Sol Gel ◽  
Rf Magnetron Sputtering ◽  
Lead Zirconate ◽  
Preferred Orientation ◽  
Sputtering Deposition ◽  
Oriented Film ◽  
Zirconate Titanate

Highly oriented lead zirconate titanate (PZT) films were fabricated on a platinized silicon substrate using a combination of sol-gel and radio frequency (RF) magnetron sputtering deposition methods. A sol-gel derived PZT layer highly oriented to the (100) plane was deposited as a seed layer, and PZT with the same composition then was deposited on the seed layer by RF-magnetron sputtering. The film deposited on the seed layer showed a strong (100) preferred orientation, while the film deposited without the seed layer showed a (111) preferred orientation. Furthermore, a thick PZT film of up to 4 μm was able to be deposited without cracks by using the seed layer. The piezoelectric property of the (100) oriented film was much better than that of the (111) oriented film.

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