Deposition of PZT thin films by pulsed laser ablation for MEMS application

1997 ◽  
Author(s):  
Ryutaro Maeda ◽  
Kaoru M. Kikuchi ◽  
Andreas Schroth ◽  
Akihiko Umezawa ◽  
Sohei Matsumoto
Keyword(s):  
Thin Films ◽  
Laser Ablation ◽  
Pulsed Laser ◽  
Pulsed Laser Ablation ◽  
Pzt Thin Films

Characterization of Post - Annealed PZT Thin Films Deposited Using Pulsed Laser Ablation

1994 ◽  
Vol 361 ◽  
Author(s):  
Jyrki Lapp Alainen ◽  
Johannes Frantti ◽  
Seppo Leppävuori
Keyword(s):  
Thin Films ◽  
Laser Ablation ◽  
Lead Zirconate Titanate ◽  
Pulsed Laser ◽  
Incident Beam ◽  
Pulsed Laser Ablation ◽  
Lead Zirconate ◽  
Pzt Thin Films ◽  
Excimer Laser Pulse ◽  
Particulate Number

ABSTRACTPulsed laser ablation was used to deposit Nd-doped lead zirconate titanate (PZT) thin films with a thickness of from 100 to 800 nm from a Pb0.97 Nd0.02(Zr0.55Ti0.45)O3 target. The films were ablated onto sapphire and MgO substrates using a XeCl excimer laser (pulse energy 50 mJ, wavelength 308 nm, pulse duration 20 ns). The distance between the target and the substrates was 40 mm, and the angle between the target normal and the incident beam was 45 °. The films were post-annealed in air at various temperatures (600 – 900 °C) with PZT powder. It was found that the laser beam energy density on the surface of the target had a significant effect on the composition of the films, the number of particulates on the surface of the films and the growth rates of the films. Lead deficiency was found in the films in the case of high fluence (> 1.5 J/cm2) while low fluence values (< 1.0 J/cm2) gave an excess of lead and too low Zr/(Zr+Ti) ratios. The particulate number density was low for fluence values between 0.5 and 1.5 J/cm2. EDS and X-ray diffraction was used to determine the composition and the crystal structure of the annealed films. The films deposited using a low fluence showed increasing tetragonal c/a-ratio with increasing post-annealing temperatures. Raman spectra measured from annealed films were found to be typical of PZT.

Structural and photoelectrical properties of Nb-doped PZT thin films deposited by pulsed laser ablation

2004 ◽  
Vol 24 (6) ◽  
pp. 1633-1636 ◽  
Author(s):  
I. Boerasu ◽  
M. Pereira ◽  
M.J.M. Gomes ◽  
B. Watts ◽  
F. Leccabue ◽  
...  
Keyword(s):  
Thin Films ◽  
Laser Ablation ◽  
Pulsed Laser ◽  
Pulsed Laser Ablation ◽  
Pzt Thin Films ◽  
Photoelectrical Properties

Observations on the growth of YBa2Cu3O7-δ thin films on MgO by pulsed-laser ablation

1991 ◽  
Vol 49 ◽  
pp. 1068-1069
Author(s):  
M. Grant Norton ◽  
C. Barry Carter
Keyword(s):  
Thin Film ◽  
Thin Films ◽  
Laser Ablation ◽  
Substrate Surface ◽  
Pulsed Laser ◽  
Pulsed Laser Ablation ◽  
Thin Film Deposition ◽  
Film Deposition ◽  
Laser Ablation Process ◽  
Deposition Parameters

Pulsed-laser ablation has been widely used to produce high-quality thin films of YBa2Cu3O7-δ on a range of substrate materials. The nonequilibrium nature of the process allows congruent deposition of oxides with complex stoichiometrics. In the high power density regime produced by the UV excimer lasers the ablated species includes a mixture of neutral atoms, molecules and ions. All these species play an important role in thin-film deposition. However, changes in the deposition parameters have been shown to affect the microstructure of thin YBa2Cu3O7-δ films. The formation of metastable configurations is possible because at the low substrate temperatures used, only shortrange rearrangement on the substrate surface can occur. The parameters associated directly with the laser ablation process, those determining the nature of the process, e g. thermal or nonthermal volatilization, have been classified as ‘primary parameters'. Other parameters may also affect the microstructure of the thin film. In this paper, the effects of these ‘secondary parameters' on the microstructure of YBa2Cu3O7-δ films will be discussed. Examples of 'secondary parameters' include the substrate temperature and the oxygen partial pressure during deposition.

ZnS thin films grown on Si(100) by XeCl pulsed laser ablation

2001 ◽  
Vol 177 (1-2) ◽  
pp. 73-77 ◽  
Author(s):  
K.T Hillie ◽  
C Curren ◽  
H.C Swart
Keyword(s):  
Thin Films ◽  
Laser Ablation ◽  
Pulsed Laser ◽  
Pulsed Laser Ablation

Nano-ionic thin films of gadolinia-doped ceria prepared by pulsed laser ablation

Ionics ◽  
2007 ◽  
Vol 13 (5) ◽  
pp. 343-348 ◽  
Author(s):  
P. Kuppusami ◽  
K. Muthukkumaran ◽  
R. Divakar ◽  
R. Kesavamoorthy ◽  
E. Mohandas ◽  
...  
Keyword(s):  
Thin Films ◽  
Laser Ablation ◽  
Pulsed Laser ◽  
Pulsed Laser Ablation ◽  
Doped Ceria

Fabrication of PDPhSM matrix nanocomposite thin films by pulsed laser ablation

2010 ◽  
Vol 31 (4) ◽  
pp. 1746-1748
Author(s):  
Ren-Guo Song ◽  
Fang-Er Yang ◽  
Xiao-Hong Weng ◽  
Wang-Zhao He
Keyword(s):  
Thin Films ◽  
Laser Ablation ◽  
Pulsed Laser ◽  
Pulsed Laser Ablation ◽  
Nanocomposite Thin Films ◽  
Matrix Nanocomposite
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