Influence of spatial field effect on dynamic operation of DFB laser with complex coupling coefficient

1997 ◽  
Author(s):  
Agnieszka Mossakowska-Wyszynska ◽  
Pawel Szczepanski
Keyword(s):  
Coupling Coefficient ◽  
Field Effect ◽  
Dynamic Operation ◽  
Dfb Laser

Dependence of spectral linewidth on cavity length and coupling coefficient in DFB laser

1988 ◽  
Vol 24 (10) ◽  
pp. 613-614 ◽  
Author(s):  
S. Ogita ◽  
Y. Kotaki ◽  
K. Kihara ◽  
M. Matsuda ◽  
H. Ishikawa ◽  
...  
Keyword(s):  
Coupling Coefficient ◽  
Cavity Length ◽  
Spectral Linewidth ◽  
Dfb Laser

4.6 nm Mode-Hop-Free Tunable DFB Laser with High Coupling Coefficient Gratings

2006 ◽  
Author(s):  
N. Nunoya ◽  
Y. Shibata ◽  
H. Ishii ◽  
H. Okamoto ◽  
Y. Kawaguchi ◽  
...  
Keyword(s):  
Coupling Coefficient ◽  
Dfb Laser

A General Approach to Probe Dynamic Operation and Carrier Mobility in Field‐Effect Transistors with Nonuniform Accumulation

2019 ◽  
Vol 29 (29) ◽  
pp. 1901700 ◽  
Author(s):  
Chuan Liu ◽  
Changdong Chen ◽  
Xiaojie Li ◽  
Sujuan Hu ◽  
Chenning Liu ◽  
...  
Keyword(s):  
Field Effect ◽  
Carrier Mobility ◽  
Field Effect Transistors ◽  
Dynamic Operation

Effect of metal contact's reflection on the effective coupling coefficient of second-order DFB laser diodes

2004 ◽  
Vol 42 (4) ◽  
pp. 339-342 ◽  
Author(s):  
Yuan Zhong ◽  
Xiaopeng Zhu ◽  
Guofeng Song ◽  
Yidong Huang ◽  
Lianghui Chen
Keyword(s):  
Coupling Coefficient ◽  
Laser Diodes ◽  
Second Order ◽  
Effective Coupling ◽  
Dfb Laser

DFB laser with nonuniform coupling coefficient realized by double-layer buried grating

1993 ◽  
Vol 5 (10) ◽  
pp. 1128-1131 ◽  
Author(s):  
S. Nilsson ◽  
T. Kjellberg ◽  
T. Klinga ◽  
J. Wallin ◽  
K. Streubel ◽  
...  
Keyword(s):  
Double Layer ◽  
Coupling Coefficient ◽  
Dfb Laser

scholarly journals Dynamic Response of Two-Electrode Distributed Feedback Laser for Stable Signal Mode Operation

2015 ◽  
Vol 5 (1) ◽  
pp. 23
Author(s):  
Hamza Bousseta ◽  
A. Zatni ◽  
A. Amghar ◽  
A. Moumen ◽  
A. Elyamani
Keyword(s):  
Dynamic Response ◽  
Coupling Coefficient ◽  
Communication Systems ◽  
Optical Fiber Communication ◽  
Distributed Feedback ◽  
Hole Burning ◽  
Mode Operation ◽  
Signal Mode ◽  
Dfb Laser ◽  
Dynamic Signal

The longitudinal spatial hole burning (LSHB) effect has been known to limit the performance of distributed feedback (DFB) semiconductor lasers to achieve a better dynamic signal mode operation (DSMO). So, in order to ensure a stable (DSMO), we propose a novel device design of two electrode DFB lasers with longitudinal variation in the coupling coefficient (distributed coupling coefficient (DCC)), the structure also contains a phase shifted in middle of the cavity. By means of the finite difference time domain (FDTD) numerical method, we analyze dynamic response of our structure and we also compare the results with the conventional two electrode DFB laser (TE-DFB). The numerical simulation shows that, a better dynamic signal mode has been achieved by TE-DCC-DFB lasers in comparison with TE-DFB laser due to its better and high side mode suppression ratio (SMSR). Therefore, the TE-DCC-DFB lasers will be useful to extend the transmission distance in optical fiber communication systems.

scholarly journals Gallium-Nitride Field Effect Transistors in Extreme Temperature Conditions

2021 ◽  
Vol 18 (4) ◽  
pp. 168-176
Author(s):  
Martijn S. Duraij ◽  
Yudi Xiao ◽  
Gabriel Zsurzsan ◽  
Zhe Zhang
Keyword(s):  
Gallium Nitride ◽  
Field Effect ◽  
Field Effect Transistors ◽  
Extreme Temperature ◽  
Effect Of Temperature ◽  
Power Electronic ◽  
Electronic Circuits ◽  
Dynamic Operation ◽  
Temperature Conditions ◽  
Power Electronic Circuits

Abstract Compact power electronic circuits and higher operating temperatures of switching devices call for an analysis and verification on the impact of the parasitic components in these devices. The found drift mechanisms in a gallium-nitride field effect transistors (GaN-FET) are studied by literature and related to measurement results. The measurements in extreme temperature conditions are far beyond the manufacturer-recommended operating range. Influences to parasitic elements in both static and dynamic operation of the GaN-FETs are investigated and related toward device losses in switch-mode power electronic circuits with the example of a half-bridge circuit. In this article, static operation investigation on the effect of temperature toward resistance, leakage currents, and reverse conduction is conducted. Dynamic operation between the two states of GaN-FET is also addressed and related to the potential impact in a switching circuit losses. A thermal chamber was built to precisely measure the effect of temperature toward parasitic elements in the devices using a curve tracer. It was found that the increment in RDSon, IDSS, IGSS, and VSD can be justified by the literature and verified by measurements. Incremental COSS and decreasing VGSth was found when exposing devices to extreme temperatures. These two parameters give real challenge over designing circuits at high temperature where timing is critical. Albeit temperature challenges, it is found that investigated GaN-FETs have potential to be used in extreme temperature-operating conditions.

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