Characterization of a fully depleted CCD on high-resistivity silicon

1997 ◽  
Author(s):  
Richard J. Stover ◽  
Mingzhi Wei ◽  
Yan J. Lee ◽  
David K. Gilmore ◽  
Steven E. Holland ◽  
...  
Keyword(s):  
High Resistivity ◽  
Fully Depleted ◽  
High Resistivity Silicon

scholarly journals Design and Characterization of Backside Termination Structures for Thick Fully-Depleted MAPS

Sensors ◽  
2021 ◽  
Vol 21 (11) ◽  
pp. 3809
Author(s):  
Thomas Corradino ◽  
Gian-Franco Dalla Betta ◽  
Lorenzo De Cilladi ◽  
Coralie Neubüser ◽  
Lucio Pancheri
Keyword(s):  
Breakdown Voltage ◽  
Electrical Characterization ◽  
Cmos Technology ◽  
High Resistivity ◽  
Worst Case ◽  
Fully Depleted ◽  
Active Pixel ◽  
Pixel Sensors ◽  
Full Depletion

Fully Depleted Monolithic Active Pixel Sensors (FD-MAPS) represent an appealing alternative to hybrid detectors for radiation imaging applications. We have recently demonstrated the feasibility of FD-MAPS based on a commercial 110 nm CMOS technology, adapted using high-resistivity substrates and backside post-processing. A p/n junction diode, fabricated on the detector backside using low-temperature processing steps after the completion of the front-side Back End of Line (BEOL), is reverse-biased to achieve the full depletion of the substrate and thus fast charge collection by drift. Test diodes including termination structures with different numbers of floating guard rings and different pitches were fabricated together with other Process Control Monitor structures. In this paper, we present the design of the backside diodes, together with results from the electrical characterization of the test devices, aiming to improve understanding of the strengths and limitations of the proposed approach. Characterization results obtained on several wafers demonstrate the effectiveness of the termination rings in increasing the breakdown voltage of the backside diodes and in coping with the variability of the passivation layer characteristics. A breakdown voltage exceeding 400 V in the worst case was demonstrated in devices with 30 guard rings with 6 μm pitch, thus enabling the full depletion of high-resistivity substrates with a thickness larger than or equal to 300 μm. Additionally, we show the first direct comparison for this technology of measured pixel characteristics with 3D TCAD simulations, proving a good agreement in the extracted operating voltages.

scholarly journals Fully depleted, back-illuminated charge-coupled devices fabricated on high-resistivity silicon

2003 ◽  
Vol 50 (1) ◽  
pp. 225-238 ◽  
Author(s):  
S.E. Holland ◽  
D.E. Groom ◽  
N.P. Palaio ◽  
R.J. Stover ◽  
Mingzhi Wei
Keyword(s):  
High Resistivity ◽  
Fully Depleted ◽  
Charge Coupled Devices ◽  
High Resistivity Silicon ◽  
Back Illuminated

Characterization of Finite-Width Ground Coplanar Waveguides on High Resistivity Silicon With Ultralow Metallization Thickness

2017 ◽  
Vol 65 (12) ◽  
pp. 4836-4842 ◽  
Author(s):  
Jaroslaw Judek ◽  
Arkadiusz P. Gertych ◽  
Michal Swiniarski ◽  
Mariusz Zdrojek ◽  
Jerzy Krupka ◽  
...  
Keyword(s):  
High Resistivity ◽  
Finite Width ◽  
Coplanar Waveguides ◽  
High Resistivity Silicon

Evanescent microwave probes on high-resistivity silicon and its application in characterization of semiconductors

1999 ◽  
Vol 70 (7) ◽  
pp. 3083-3086 ◽  
Author(s):  
M. Tabib-Azar ◽  
D. Akinwande ◽  
G. E. Ponchak ◽  
S. R. LeClair
Keyword(s):  
High Resistivity ◽  
High Resistivity Silicon ◽  
Microwave Probes
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