Nano absorbing centers: a key point in the laser damage of thin films

Author(s):  
Jean DiJon ◽  
T. Poiroux ◽  
C. Desrumaux
Keyword(s):  
2007 ◽  
Author(s):  
Laurent Gallais ◽  
Jérémie Capoulade ◽  
Jean-Yves Natoli ◽  
Mireille Commandré ◽  
Michel Cathelinaud ◽  
...  
Keyword(s):  

1967 ◽  
Author(s):  
Arthur F. Turner ◽  
Stanley J. Refermat
Keyword(s):  

Author(s):  
Mark Mero ◽  
Jianhua Liu ◽  
Ali J. Sabbah ◽  
Benjamin Clapp ◽  
Jayesh Jasapara ◽  
...  

2014 ◽  
Vol 53 (5) ◽  
pp. 850 ◽  
Author(s):  
Shuvendu Jena ◽  
Raj Bahadur Tokas ◽  
Nitin M. Kamble ◽  
Sudhakar Thakur ◽  
Naba Kishore Sahoo

2005 ◽  
Vol 875 ◽  
Author(s):  
Joel P. McDonald ◽  
Vanita R. Mistry ◽  
Katherine E. Ray ◽  
Steven M. Yalisove

AbstractFemtosecond pulsed laser damage of Silicon (100) with thermal oxide thin films was studied in order to further understand the optical and electrical properties of thin films and to evaluate their influence on the damage of the substrate. The damage threshold as a function of film thickness (2 – 1200 nm) was measured. The damage morphology produced by single laser pulses was also investigated. Two primary morphologies were observed, one in which the oxide film is completely removed, and the other in which the film is delaminated and expanded above the surface producing a bubble feature.


2015 ◽  
Vol 42 (6) ◽  
pp. 0607001
Author(s):  
郝明明 Hao Mingming ◽  
路国光 Lu Guoguang ◽  
汪丽娜 Wang Lina ◽  
秦莉 Qin Li ◽  
朱洪波 Zhu Hongbo ◽  
...  
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