Optical characterization of binary, tertiary, and quaternary II-VI semiconductor thin films prepared by pulsed excimer laser deposition

1997 ◽  
Author(s):  
Lowell R. Matthews ◽  
Robert L. Parkhill ◽  
Edward T. Knobbe
Keyword(s):  
Thin Films ◽  
Excimer Laser ◽  
Optical Characterization ◽  
Laser Deposition ◽  
Semiconductor Thin Films

Characterization of Pb(Zr,Ti)O3 thin films on SOI prepared by excimer laser deposition

1995 ◽  
Vol 9 (1-3) ◽  
pp. 63-68 ◽  
Author(s):  
Lirong Zheng ◽  
Yiqing Chen ◽  
Shunkai Zhang ◽  
Weigen Luo ◽  
Chenglu Lin
Keyword(s):  
Thin Films ◽  
Excimer Laser ◽  
Laser Deposition

Pulsed excimer laser deposition and characterization of ferroelectric Pb(Zr0.52Ti0.48)O3 thin films

1992 ◽  
Vol 7 (9) ◽  
pp. 2521-2529 ◽  
Author(s):  
D. Roy ◽  
S.B. Krupanidhi
Keyword(s):  
Thin Films ◽  
Excimer Laser ◽  
Lead Zirconate Titanate ◽  
Fatigue Behavior ◽  
Lead Zirconate ◽  
Laser Deposition ◽  
Silicon Substrates ◽  
Excimer Laser Ablation ◽  
Pzt Films

Lead zirconate titanate (PZT) thin films were prepared by excimer laser ablation on platinum coated silicon substrates. The composition of the films showed dependence on the fluence at low energy densities (<2 J/cm2), and less dependence on the ablation fluence was observed beyond a fluence of 2 J/cm2. A correlation among the fluence, ablation pressure, and substrate temperature has been established. Crystalline perovskite PZT films showed a dielectric constant of 800–1000, a remnant polarization of 32 μC/cm2, and a coercive field of 130 kV/cm. Films showed fatigue behavior that may be used in a device, and a close comparison of fatigue behavior between the films deposited at different energy densities indicated a better fatigue behavior for a fluence of 4 J/cm2.

Preparation and characterization of CuSbSe2 thin films deposited by pulsed laser deposition

2021 ◽  
Vol 127 ◽  
pp. 105716
Author(s):  
Tianzhen Guo ◽  
Dan Wang ◽  
Yajun Yang ◽  
Xiaoyong Xiong ◽  
Kelin Li ◽  
...  
Keyword(s):  
Thin Films ◽  
Pulsed Laser Deposition ◽  
Pulsed Laser ◽  
Laser Deposition

Processing by Pulsed Laser Deposition and Structural, Morphological and Chemical Characterization of Bi-Pb-Sr-Ca-Cu-O and Bi-Pb-Sb-Sr-Ca-Cu-O Thin Films

2010 ◽  
Vol 75 ◽  
pp. 202-207
Author(s):  
Victor Ríos ◽  
Elvia Díaz-Valdés ◽  
Jorge Ricardo Aguilar ◽  
T.G. Kryshtab ◽  
Ciro Falcony
Keyword(s):  
Thin Films ◽  
Pulsed Laser Deposition ◽  
Room Temperature ◽  
Pulsed Laser ◽  
Chemical Characterization ◽  
Laser Deposition ◽  
Nominal Composition ◽  
Deposition Parameters ◽  
The Relationship

Bi-Pb-Sr-Ca-Cu-O (BPSCCO) and Bi-Pb-Sb-Sr-Ca-Cu-O (BPSSCCO) thin films were grown on MgO single crystal substrates by pulsed laser deposition. The deposition was carried out at room temperature during 90 minutes. A Nd:YAG excimer laser ( = 355 nm) with a 2 J/pulse energy density operated at 30 Hz was used. The distance between the target and substrate was kept constant at 4,5 cm. Nominal composition of the targets was Bi1,6Pb0,4Sr2Ca2Cu3O and Bi1,6Pb0,4Sb0,1Sr2Ca2Cu3OSuperconducting targets were prepared following a state solid reaction. As-grown films were annealed at different conditions. As-grown and annealed films were characterized by XRD, FTIR, and SEM. The films were prepared applying an experimental design. The relationship among deposition parameters and their effect on the formation of superconducting Bi-system crystalline phases was studied.

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