Accuracy analysis of three degrees of parallel mechanism based on Monte Carlo Simulation

2021 ◽  
Author(s):  
Haiqiang Zhang ◽  
Jianglong Tang ◽  
Kan Shi ◽  
Yan'an Yao
Keyword(s):  
Monte Carlo Simulation ◽  
Monte Carlo ◽  
Parallel Mechanism ◽  
Accuracy Analysis

scholarly journals Kinematic Reliability Solution of 3-UPS-PU Parallel Mechanism Based on Monte Carlo Simulation

2015 ◽  
Vol 9 (1) ◽  
pp. 324-332 ◽  
Author(s):  
Guohua Cui ◽  
Muyuan Sun ◽  
Liang Yan ◽  
Hongjuan Hou ◽  
Haiqiang Zhang
Keyword(s):  
Monte Carlo Simulation ◽  
Monte Carlo ◽  
Inverse Kinematics ◽  
Parallel Mechanism ◽  
Solution Method ◽  
Simulation Method ◽  
Inverse Kinematic ◽  
Future Research ◽  
Position And Orientation ◽  
Kinematic Solution

In order to research kinematic reliability of 3-UPS-PU parallel mechanism, the structure and kinematics analysis were performed. Inverse kinematics equation can be derived by homogeneous coordinate transformation formula. Position and orientation output error forward kinematics model was obtained by the differential transformation on the basis of inverse kinematic solution of the position. The curves of the position and orientation output errors can be plotted with a large batch production by adopting Monte-Carlo simulation method. Then kinematic reliability of the mechanism can be solved through the probability statistics method and theoretical solution method respectively. Finally, these two methods were compared with each other. The results illustrate that the results of the two methods are basically consistent, and the mechanism can be work reliably and stably under general operations, which provides some valuable references for the related future research.

Electron Scattering in Solids

1990 ◽  
Vol 48 (2) ◽  
pp. 4-5
Author(s):  
Ryuichi Shimizu ◽  
Ze-Jun Ding
Keyword(s):  
Monte Carlo Simulation ◽  
Monte Carlo ◽  
Angular Distribution ◽  
Elastic Scattering ◽  
Electron Scattering ◽  
Cross Sections ◽  
Expansion Method ◽  
Electron Excitation ◽  
Partial Wave Expansion ◽  
Backscattered Electrons

Monte Carlo simulation has been becoming most powerful tool to describe the electron scattering in solids, leading to more comprehensive understanding of the complicated mechanism of generation of various types of signals for microbeam analysis.The present paper proposes a practical model for the Monte Carlo simulation of scattering processes of a penetrating electron and the generation of the slow secondaries in solids. The model is based on the combined use of Gryzinski’s inner-shell electron excitation function and the dielectric function for taking into account the valence electron contribution in inelastic scattering processes, while the cross-sections derived by partial wave expansion method are used for describing elastic scattering processes. An improvement of the use of this elastic scattering cross-section can be seen in the success to describe the anisotropy of angular distribution of elastically backscattered electrons from Au in low energy region, shown in Fig.l. Fig.l(a) shows the elastic cross-sections of 600 eV electron for single Au-atom, clearly indicating that the angular distribution is no more smooth as expected from Rutherford scattering formula, but has the socalled lobes appearing at the large scattering angle.

Determination of Stoichiometry of GaAs Component in (Gaas)Ge Epitaxially Grown Thin Films by Electron Microprobe X-Ray Analysis

1990 ◽  
Vol 48 (2) ◽  
pp. 264-265
Author(s):  
D. R. Liu ◽  
S. S. Shinozaki ◽  
R. J. Baird
Keyword(s):  
Thin Film ◽  
Thin Films ◽  
Monte Carlo Simulation ◽  
Monte Carlo ◽  
Compound Semiconductors ◽  
Energy Dispersive Analysis ◽  
X Ray ◽  
Metastable Alloys ◽  
Lower Voltage

The epitaxially grown (GaAs)Ge thin film has been arousing much interest because it is one of metastable alloys of III-V compound semiconductors with germanium and a possible candidate in optoelectronic applications. It is important to be able to accurately determine the composition of the film, particularly whether or not the GaAs component is in stoichiometry, but x-ray energy dispersive analysis (EDS) cannot meet this need. The thickness of the film is usually about 0.5-1.5 μm. If Kα peaks are used for quantification, the accelerating voltage must be more than 10 kV in order for these peaks to be excited. Under this voltage, the generation depth of x-ray photons approaches 1 μm, as evidenced by a Monte Carlo simulation and actual x-ray intensity measurement as discussed below. If a lower voltage is used to reduce the generation depth, their L peaks have to be used. But these L peaks actually are merged as one big hump simply because the atomic numbers of these three elements are relatively small and close together, and the EDS energy resolution is limited.

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