Influence of defect structure on characteristics of X- and γ-radiation detectors based on CdTe:Cl according to high-resolution X-ray diffractometry

2021 ◽  
Author(s):  
Ihor Fodchuk ◽  
Andrii Kuzmin ◽  
Olena Maslyanchuk ◽  
Ivan Hutsuliak ◽  
Mykola Solodkyi ◽  
...  
Keyword(s):  
High Resolution ◽  
Defect Structure ◽  
Radiation Detectors ◽  
Γ Radiation ◽  
X Ray

High radiation resistant crystals for x-ray and γ-radiation detectors

2021 ◽  
Author(s):  
Valery M. Skliarchuk ◽  
Petro M. Fochuk ◽  
Aleksey E. Bolotnikov ◽  
Ralph B. James
Keyword(s):  
Radiation Detectors ◽  
High Radiation ◽  
Γ Radiation ◽  
X Ray ◽  
Radiation Resistant

Structural Characterization of the Growth Front of 4H-SiC Boules Grown Using the Physical Vapor Transport Growth Method

2018 ◽  
Vol 924 ◽  
pp. 15-18
Author(s):  
Masashi Sonoda ◽  
Kentaro Shioura ◽  
Takahiro Nakano ◽  
Noboru Ohtani ◽  
Masakazu Katsuno ◽  
...  
Keyword(s):  
High Resolution ◽  
Surface Morphology ◽  
Defect Structure ◽  
Growth Front ◽  
Vapor Transport ◽  
Physical Vapor Transport ◽  
X Ray Diffraction ◽  
X Ray ◽  
Growth Method

The defect structure at the growth front of 4H-SiC boules grown using the physical vapor transport (PVT) method has been investigated using high resolution x-ray diffraction and x-ray topography. The crystal parameters such as the c-lattice constant exhibited characteristic variations across the growth front, which appeared to be caused by variation in surface morphology of the as-grown surface of the boules rather than the defect structure underneath the surface. X-ray topography also revealed that basal plane dislocations are hardly nucleated at the growth front during PVT growth of 4H-SiC crystals.

The Application of High-Resolution Solid State Detectors to X-Ray Spectrometry - A Review

1971 ◽  
Vol 15 ◽  
pp. 1-35 ◽  
Author(s):  
R. L. Heath
Keyword(s):  
Solid State ◽  
High Resolution ◽  
Field Effect Transistors ◽  
Radiation Detectors ◽  
Low Noise ◽  
Data Systems ◽  
Computer Data ◽  
X Ray ◽  
State Radiation ◽  
On Line

Developments during the past few years in solid-state radiation detectors and low-noise electronics employing field-effect transistors operated at cryogenic temperatures have resulted in the availability of high-resolution energy-dispersive spectrometers for a variety of applications in x-ray spectrometry. Using pulseamplitude analysis techniques, these spectrometers make it possible to obtain multi-elemental analyses on a routine laboratory basis employing x-ray fluorescence techniques. The combination of these spectrometers with small, inexpensive on-line computer data systems makes It possible to obtain rapid on-line qualitative and quantitative analysis of samples in the laboratory and in special field applications. A general review of the present state of development in detectors, electronics and on-line data systems will be presented together with descriptions of applications of such equipment in the laboratory.

High resolution X-ray diffraction defect structure characterization in Si-doped and undoped GaN films

2002 ◽  
Vol 91-92 ◽  
pp. 441-444 ◽  
Author(s):  
E. Zielińska-Rohozińska ◽  
M. Regulska ◽  
V.S. Harutyunyan ◽  
K. Pakuła ◽  
J. Borowski
Keyword(s):  
High Resolution ◽  
Defect Structure ◽  
Structure Characterization ◽  
X Ray Diffraction ◽  
X Ray ◽  
Si Doped
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