Ceramic-based metamaterial for THz sensing applications

2021 ◽  
Author(s):  
Mathieu Poulin ◽  
Maksim Skorobogatiy
2016 ◽  
Vol 87 (4) ◽  
pp. 045107 ◽  
Author(s):  
G. M. Klemencic ◽  
P. A. R. Ade ◽  
S. Chase ◽  
R. Sudiwala ◽  
A. L. Woodcraft

AIP Advances ◽  
2020 ◽  
Vol 10 (7) ◽  
pp. 075014
Author(s):  
Zizheng Liu ◽  
Luyao Wang ◽  
Ming Hua ◽  
Xiaoyu Liu ◽  
Fuyue Qian ◽  
...  

Sensors ◽  
2020 ◽  
Vol 20 (9) ◽  
pp. 2616 ◽  
Author(s):  
Robert B. Kohlhaas ◽  
Lars Liebermeister ◽  
Steffen Breuer ◽  
Marcel Amberg ◽  
David de Felipe ◽  
...  

We present a fiber coupled transceiver head for terahertz (THz) time-domain reflection measurements. The monolithically integrated transceiver chip is based on iron (Fe) doped In0.53Ga0.47As (InGaAs:Fe) grown by molecular beam epitaxy. Due to its ultrashort electron lifetime and high mobility, InGaAs:Fe is very well suited as both THz emitter and receiver. A record THz bandwidth of 6.5 THz and a peak dynamic range of up to 75 dB are achieved. In addition, we present THz imaging in reflection geometry with a spatial resolution as good as 130 µm. Hence, this THz transceiver is a promising device for industrial THz sensing applications.


2004 ◽  
Author(s):  
David J. Cook ◽  
Brian K. Decker ◽  
Gami Dadusc ◽  
Mark G. Allen

2004 ◽  
Author(s):  
David J. Cook ◽  
Brian K. Decker ◽  
Gami Maislin ◽  
Mark G. Allen

2021 ◽  
Vol 142 ◽  
pp. 106587
Author(s):  
Jian Chen ◽  
Jijun Feng ◽  
Xinyao Wu ◽  
Yuanming Zhao ◽  
Fuling Zhang ◽  
...  

2020 ◽  
Vol 90 (3) ◽  
pp. 30502
Author(s):  
Alessandro Fantoni ◽  
João Costa ◽  
Paulo Lourenço ◽  
Manuela Vieira

Amorphous silicon PECVD photonic integrated devices are promising candidates for low cost sensing applications. This manuscript reports a simulation analysis about the impact on the overall efficiency caused by the lithography imperfections in the deposition process. The tolerance to the fabrication defects of a photonic sensor based on surface plasmonic resonance is analysed. The simulations are performed with FDTD and BPM algorithms. The device is a plasmonic interferometer composed by an a-Si:H waveguide covered by a thin gold layer. The sensing analysis is performed by equally splitting the input light into two arms, allowing the sensor to be calibrated by its reference arm. Two different 1 × 2 power splitter configurations are presented: a directional coupler and a multimode interference splitter. The waveguide sidewall roughness is considered as the major negative effect caused by deposition imperfections. The simulation results show that plasmonic effects can be excited in the interferometric waveguide structure, allowing a sensing device with enough sensitivity to support the functioning of a bio sensor for high throughput screening. In addition, the good tolerance to the waveguide wall roughness, points out the PECVD deposition technique as reliable method for the overall sensor system to be produced in a low-cost system. The large area deposition of photonics structures, allowed by the PECVD method, can be explored to design a multiplexed system for analysis of multiple biomarkers to further increase the tolerance to fabrication defects.


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