Depth distribution of optical characteristics, bacteriochlorophylls and metagenomic profiles of bacterial communities in meromictic lakes Trekhtzvetnoe and Elovoe in March 2021

Bacterial Communities of Three Saline Meromictic Lakes in Central Asia

PLoS ONE ◽

10.1371/journal.pone.0150847 ◽

2016 ◽

Vol 11 (3) ◽

pp. e0150847 ◽

Cited By ~ 29

Author(s):

Bayanmunkh Baatar ◽

Pei-Wen Chiang ◽

Denis Yu Rogozin ◽

Yu-Ting Wu ◽

Ching-Hung Tseng ◽

...

Keyword(s):

Central Asia ◽

Bacterial Communities ◽

Meromictic Lakes

Download Full-text

Applications of SIMS to electronic materials and devices

Proceedings, annual meeting, Electron Microscopy Society of America ◽

10.1017/s0424820100133047 ◽

1992 ◽

Vol 50 (2) ◽

pp. 1682-1683

Author(s):

S.F. Corcoran

Keyword(s):

Depth Distribution ◽

Secondary Ion Mass Spectrometry ◽

Semiconductor Device ◽

Electronic Materials ◽

Profile Analysis ◽

Semiconductor Industry ◽

Small Diameter ◽

Depth Resolution ◽

Detection Sensitivity

Over the past decade secondary ion mass spectrometry (SIMS) has played an increasingly important role in the characterization of electronic materials and devices. The ability of SIMS to provide part per million detection sensitivity for most elements while maintaining excellent depth resolution has made this technique indispensable in the semiconductor industry. Today SIMS is used extensively in the characterization of dopant profiles, thin film analysis, and trace analysis in bulk materials. The SIMS technique also lends itself to 2-D and 3-D imaging via either the use of stigmatic ion optics or small diameter primary beams.By far the most common application of SIMS is the determination of the depth distribution of dopants (B, As, P) intentionally introduced into semiconductor materials via ion implantation or epitaxial growth. Such measurements are critical since the dopant concentration and depth distribution can seriously affect the performance of a semiconductor device. In a typical depth profile analysis, keV ion sputtering is used to remove successive layers the sample.

Download Full-text

Fluorescence effects in quantitative microprobe analysis

Proceedings, annual meeting, Electron Microscopy Society of America ◽

10.1017/s0424820100134533 ◽

1990 ◽

Vol 48 (2) ◽

pp. 188-189

Author(s):

S.J.B. Reed

Keyword(s):

Microprobe Analysis ◽

Depth Distribution ◽

Exciting Radiation ◽

Primary Radiation ◽

List Type ◽

Type Number ◽

Computing Power ◽

X Ray ◽

Fluorescent Radiation

Characteristic fluorescenceThe theory of characteristic fluorescence corrections was first developed by Castaing. The same approach, with an improved expression for the relative primary x-ray intensities of the exciting and excited elements, was used by Reed, who also introduced some simplifications, which may be summarized as follows (with reference to K-K fluorescence, i.e. K radiation of element ‘B’ exciting K radiation of ‘A’):1.The exciting radiation is assumed to be monochromatic, consisting of the Kα line only (neglecting the Kβ line).2.Various parameters are lumped together in a single tabulated function J(A), which is assumed to be independent of B.3.For calculating the absorption of the emerging fluorescent radiation, the depth distribution of the primary radiation B is represented by a simple exponential.These approximations may no longer be justifiable given the much greater computing power now available. For example, the contribution of the Kβ line can easily be calculated separately.

Download Full-text

A New Numerical Model for Electron-Probe Analysis at High Depth Resolution

Proceedings, annual meeting, Electron Microscopy Society of America ◽

10.1017/s042482010016491x ◽

1996 ◽

Vol 54 ◽

pp. 490-491

Author(s):

P.-F. Staub ◽

C. Bonnelle ◽

F. Vergand ◽

P. Jonnard

Keyword(s):

Electron Probe ◽

Surface Segregation ◽

Depth Distribution ◽

Computing Time ◽

Depth Resolution ◽

Physical Parameters ◽

Electron Probe Analysis ◽

Interface Phases ◽

Excitation Conditions ◽

High Depth

Characterizing dimensionally and chemically nanometric structures such as surface segregation or interface phases can be performed efficiently using electron probe (EP) techniques at very low excitation conditions, i.e. using small incident energies (0.5<E0<5 keV) and low incident overvoltages (1<U0<1.7). In such extreme conditions, classical analytical EP models are generally pushed to their validity limits in terms of accuracy and physical consistency, and Monte-Carlo simulations are not convenient solutions as routine tools, because of their cost in computing time. In this context, we have developed an intermediate procedure, called IntriX, in which the ionization depth distributions Φ(ρz) are numerically reconstructed by integration of basic macroscopic physical parameters describing the electron beam/matter interaction, all of them being available under pre-established analytical forms. IntriX’s procedure consists in dividing the ionization depth distribution into three separate contributions:

Download Full-text