High sensitivity contact probe based on optical path amplification

2021 ◽  
Author(s):  
XiaoYu Feng ◽  
Rui‐Jun Li ◽  
Peng Xu
Keyword(s):  
High Sensitivity ◽  
Optical Path ◽  
Contact Probe

Si Photonics Deployment Using Cu Pillar Interconnect and Chip On Wafer Platform

2016 ◽  
Vol 2016 (DPC) ◽  
pp. 001663-001681
Author(s):  
Miguel Jimarez
Keyword(s):  
Light Source ◽  
Silicon Photonics ◽  
High Speed ◽  
High Sensitivity ◽  
Optical Path ◽  
Clock Recovery ◽  
Wafer Scale ◽  
Si Photonics ◽  
Cu Pillar ◽  
Fine Pitch

We introduce a high-speed 4x25Gbps, MSA-compliant, QSFP transceiver built on a Silicon Photonics platform. The transceiver integrates high sensitivity receivers, CTLE, clock recovery, modulator drivers and BIST on a TSMC 28nm die connected to the photonic die thru a fine pitch (50um) Copper Pillar interface. A wafer-scale approach, Chip on Wafer, CoW, is used to assemble the electronic die and the light source on to the photonic die, so that the full optical path can be tested, at speed, in loopback configuration in wafer form, using a standard ATE solution. This presentation focuses on the CoW assembly development aspects of the transceiver. Wafer probe and bump, die processing services, CoW assembly and Back End of Line, BEOL, Test Services will be presented.

Performance of Photo-Transistors with thin (50 nm.) a-Si:H Layers

1995 ◽  
Vol 377 ◽  
Author(s):  
Serag M. GadelRab ◽  
Savvas G. Chamberlain
Keyword(s):  
Contact Resistance ◽  
High Sensitivity ◽  
Transient Behavior ◽  
Image Sensors ◽  
Optical Path ◽  
Transistor Structure ◽  
Optical Sensitivity

ABSTRACTPhoto-transistor based a-Si:H image sensors allow the integration of photo-elements and pixel circuitry using standard TFT fabrication processes. While pixel circuitry use thin a-Si:H films (≈ 0.05μm) to minimize the contact resistance, photo-transistors require thick a-Si:H films (≈0.5μm) to maximize photo-sensitivity. We fabricated a new, high sensitivity photo-transistor structure using 0.05μ a-Si:H films. High optical sensitivity is achieved by separating the conduction paths of photo-generated electrons and holes using a secondary gate. Further, the optical path within the photo-transistor is doubled through manipulation of device layout. The photo-transistor show an Ilight/Idarkratio in excess of 103.We compared the transient behavior of conventional and high-sensitivity photo-transistors. We found that both devices display an increase in current with time when biased in either the dark or illuminated conditions. The current increases by six orders of magnitudes then saturates within 200 seconds of bias application. Experiments indicate that this transient behavior is due to a rise in the conductivity of the gap region with time; measurements on 0.05μm thick photo-resistor structures showed that their current increases with time. The shape and temporal range of this behavior rules out the presence of parasitic capacitive effects.

Development of a MEMS Xylophone Bar Magnetometer Using Optical Interferometry for Detection

1999 ◽  
Vol 605 ◽  
Author(s):  
Joseph Miragliotta ◽  
R. Osiander ◽  
J. L. Champion ◽  
D. A. Oursler ◽  
T.J. Kistenmacher
Keyword(s):  
Magnetic Field ◽  
Path Length ◽  
Dynamic Range ◽  
Michelson Interferometer ◽  
High Sensitivity ◽  
Force Sensor ◽  
Optical Path Length ◽  
Optical Path ◽  
Active Stabilization ◽  
Path Length Difference

AbstractWe report the results of an optical interferometric study, which was designed to measure the magnetic-field induced displacement of a resonating xylophone bar MEMS magnetometer. The MEMS magnetometer is a Lorentz-force sensor, which transduces an alternating current and an orthogonal directed magnetic field into an alternating displacement of the xylophone bar. The Michelson interferometer system includes optics and electronics for active stabilization of the optical path length difference between the reference and sample beams. The active stabilization results in the ability to control or detect pathlength differences as small as ∼ 0.6 ×10−3 Å. With this level of operational sensitivity, the presence of a one nano Tesla magnetic field was found to produce a detectable bar displacement on the order of ∼10−3 Å. In addition to the high sensitivity, the interferometer photodetector displayed linear behavior over six decades of optical path length differences, which corresponded to a magnetic field dynamic range that spanned nano- to milli-Tesla amplitudes.

scholarly journals Contact-Type Profile Measuring Device Using Laser Interferometry System Incorporating Hybrid Actuating System

2013 ◽  
Vol 7 (5) ◽  
pp. 489-497 ◽  
Author(s):  
Yung-Tien Liu ◽  
◽  
Han-Lin Wu ◽  
Je-Yi Wang ◽  
Yutaka Yamagata ◽  
...  
Keyword(s):  
Laser Interferometry ◽  
Optical Path ◽  
Measuring System ◽  
Form Error ◽  
Measuring Device ◽  
Contact Type ◽  
Linear Motors ◽  
Contact Probe ◽  
Active Probe ◽  
Measuring Force

This paper proposes a contact-type profile measuring device using a laser interferometry system for precision components. This measuring device consists of an XY-table actuated by linear motors to obtain large operational ranges, an active contact probe driven by piezoelectric actuators to provide a small measuring force, and a specially configured optical path to reduce Abbe’s error. Fundamental experiments were performed to examine the control performance of the active probe, forward and backward motion behaviors of the hybrid actuating system, and contour measurement for an asphericmold. As one example of themeasured results, a maximum form error of 1.45 µm was obtained for an aspheric surface with a measured span of 4 mm and a sag of 37 µm. As a prototype highprecision measuring system, the effectiveness of the optical path and actuating system have been demonstrated. Further studies are suggested to improve the system performance by reducing the measuring force, increasing the measuring speed, and providing a scanning function.

Radio Measurements of Coronal Magnetic Fields

1994 ◽  
Vol 144 ◽  
pp. 21-28 ◽  
Author(s):  
G. B. Gelfreikh
Keyword(s):  
Magnetic Field ◽  
Magnetic Fields ◽  
Solar Corona ◽  
Active Regions ◽  
High Sensitivity ◽  
Coronal Magnetic Field ◽  
Transverse Magnetic ◽  
Radio Sources ◽  
Radio Waves ◽  
Solar Active Regions

AbstractA review of methods of measuring magnetic fields in the solar corona using spectral-polarization observations at microwaves with high spatial resolution is presented. The methods are based on the theory of thermal bremsstrahlung, thermal cyclotron emission, propagation of radio waves in quasi-transverse magnetic field and Faraday rotation of the plane of polarization. The most explicit program of measurements of magnetic fields in the atmosphere of solar active regions has been carried out using radio observations performed on the large reflector radio telescope of the Russian Academy of Sciences — RATAN-600. This proved possible due to good wavelength coverage, multichannel spectrographs observations and high sensitivity to polarization of the instrument. Besides direct measurements of the strength of the magnetic fields in some cases the peculiar parameters of radio sources, such as very steep spectra and high brightness temperatures provide some information on a very complicated local structure of the coronal magnetic field. Of special interest are the results found from combined RATAN-600 and large antennas of aperture synthesis (VLA and WSRT), the latter giving more detailed information on twodimensional structure of radio sources. The bulk of the data obtained allows us to investigate themagnetospheresof the solar active regions as the space in the solar corona where the structures and physical processes are controlled both by the photospheric/underphotospheric currents and surrounding “quiet” corona.

Backscattered Electron Imaging of GaAs/AlGaAs Super Lattice Structures with an Ultra-High- Resolution SEM

1988 ◽  
Vol 46 ◽  
pp. 204-205
Author(s):  
Kazumichi Ogura ◽  
Michael M. Kersker
Keyword(s):  
High Resolution ◽  
Layer Structure ◽  
High Sensitivity ◽  
Beam Current ◽  
Electron Beam Current ◽  
Lattice Structures ◽  
Super Lattice ◽  
Different Types ◽  
Backscattered Electron ◽  
Electron Imaging

Backscattered electron (BE) images of GaAs/AlGaAs super lattice structures were observed with an ultra high resolution (UHR) SEM JSM-890 with an ultra high sensitivity BE detector. Three different types of super lattice structures of GaAs/AlGaAs were examined. Each GaAs/AlGaAs wafer was cleaved by a razor after it was heated for approximately 1 minute and its crosssectional plane was observed.First, a multi-layer structure of GaAs (100nm)/AlGaAs (lOOnm) where A1 content was successively changed from 0.4 to 0.03 was observed. Figures 1 (a) and (b) are BE images taken at an accelerating voltage of 15kV with an electron beam current of 20pA. Figure 1 (c) is a sketch of this multi-layer structure corresponding to the BE images. The various layers are clearly observed. The differences in A1 content between A1 0.35 Ga 0.65 As, A1 0.4 Ga 0.6 As, and A1 0.31 Ga 0.69 As were clearly observed in the contrast of the BE image.

An x-ray microprobe based upon a close-coupled focal-spot / glass capillary arrangement

1992 ◽  
Vol 50 (2) ◽  
pp. 1758-1759
Author(s):  
D. A. Carpenter ◽  
M. A. Taylor
Keyword(s):  
Imaging Techniques ◽  
Fluorescence Analysis ◽  
High Sensitivity ◽  
Specimen Preparation ◽  
X Rays ◽  
Glass Capillary ◽  
Close Coupling ◽  
X Ray ◽  
Point To Point ◽  
Beam Damage

The development of intense sources of x rays has led to renewed interest in the use of microbeams of x rays in x-ray fluorescence analysis. Sparks pointed out that the use of x rays as a probe offered the advantages of high sensitivity, low detection limits, low beam damage, and large penetration depths with minimal specimen preparation or perturbation. In addition, the option of air operation provided special advantages for examination of hydrated systems or for nondestructive microanalysis of large specimens.The disadvantages of synchrotron sources prompted the development of laboratory-based instrumentation with various schemes to maximize the beam flux while maintaining small point-to-point resolution. Nichols and Ryon developed a microprobe using a rotating anode source and a modified microdiffractometer. Cross and Wherry showed that by close-coupling the x-ray source, specimen, and detector, good intensities could be obtained for beam sizes between 30 and 100μm. More importantly, both groups combined specimen scanning with modern imaging techniques for rapid element mapping.

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