Nonlinear dynamics of sole ground-state emitting quantum-dot laser subject to optical injection

2021 ◽  
Author(s):  
Ding-Mei Zhang ◽  
Zai-Fu Jiang ◽  
Yan-Lin Deng ◽  
Yan-Li Li ◽  
Wen-Yan Yang ◽  
...  
Keyword(s):  
Nonlinear Dynamics ◽  
Quantum Dot ◽  
Ground State ◽  
Optical Injection ◽  
Quantum Dot Laser

scholarly journals Power-induced lasing state switching and bistability in a two-state quantum dot laser subject to optical injection

2020 ◽  
Vol 50 (2) ◽  
Author(s):  
Zaifu Jiang ◽  
Zhengmao Wu ◽  
Elumalai Jayaprasath ◽  
Wenyan Yang ◽  
Chunxia Hu ◽  
...  
Keyword(s):  
Excited State ◽  
Quantum Dot ◽  
Ground State ◽  
The State ◽  
Optical Injection ◽  
State Switching ◽  
Quantum Dot Laser ◽  
Injection Power ◽  
Electron Escape ◽  
Free Running

We theoretically investigate power-induced lasing state switching and bistability in a two-state quantum dot laser subject to optical injection. The simulated results show that, for a free-running two-state quantum dot laser operating at the ground state under low current, a power-induced lasing state switching between the ground state and the excited state can be achieved through introducing optical injection with a frequency (winj) close to the lasing frequency of excited state (wES). The injection power required for the state switching depends on the scanning route of injection power, i.e. there may exist state bistability for the injection power within a certain region. For forward scanning injection power, with the increase of frequency detuning (ΔΩ = winj – wES), the injection power required for the state switching shows a decreasing trend accompanied by slight fluctuations. However, for backward scanning injection power, the injection power required for the state switching exhibits obvious fluctuations with the increase of ΔΩ. The width of the hysteresis loop fluctuates with ΔΩ, and the fluctuation amplitude is increased with the increase of the injection current. Additionally, the influences of the inhomogeneous broadening factor and the electron escape rate on the bistability performances are analyzed.

Excited state spectral blowup induced by carrier dynamics in the ground state of a quantum dot laser

2017 ◽  
Author(s):  
Bryan Kelleher ◽  
David Goulding ◽  
Boguslaw Tykalewicz ◽  
Stephen P. Hegarty ◽  
Ilya Dubinkin ◽  
...  
Keyword(s):  
Excited State ◽  
Quantum Dot ◽  
Ground State ◽  
Carrier Dynamics ◽  
Quantum Dot Laser

scholarly journals First demonstration of single-layer InAs/InP (100) quantum-dot laser: continuous wave, room temperature, ground state

2009 ◽  
Vol 45 (25) ◽  
pp. 1317 ◽  
Author(s):  
J. Kotani ◽  
P.J. van Veldhoven ◽  
T. de Vries ◽  
B. Smalbrugge ◽  
E.A.J.M. Bente ◽  
...  
Keyword(s):  
Quantum Dot ◽  
Ground State ◽  
Room Temperature ◽  
Continuous Wave ◽  
Single Layer ◽  
Quantum Dot Laser

Polarization instabilities and nonlinear dynamics in a quantum dot laser

2009 ◽  
Author(s):  
Lukasz Olejniczak ◽  
Marc Sciamanna ◽  
Hugo Thienpont ◽  
Krassimir Panajotov ◽  
Alex Mutig ◽  
...  
Keyword(s):  
Nonlinear Dynamics ◽  
Quantum Dot ◽  
Quantum Dot Laser

Dual ground-state pulse generation from a passively mode-locked InAs/InGaAs quantum dot laser

2011 ◽  
Vol 99 (14) ◽  
pp. 141109 ◽  
Author(s):  
Charis Mesaritakis ◽  
Christos Simos ◽  
Hercules Simos ◽  
Igor Krestnikov ◽  
Dimitris Syvridis
Keyword(s):  
Quantum Dot ◽  
Ground State ◽  
Pulse Generation ◽  
Quantum Dot Laser
Sign in / Sign up

Export Citation Format

Share Document