SiN-Si dual-layer grating coupler to increase the input optical power of Si-based photonic-integrated circuit

2021 ◽  
Author(s):  
Pengfei Ma ◽  
Guangzhen Luo ◽  
Pengfei Wang ◽  
Jianbin Ma ◽  
Ruiting Wang ◽  
...  
Keyword(s):  
Integrated Circuit ◽  
Optical Power ◽  
Grating Coupler ◽  
Photonic Integrated Circuit

Studies on coupling of optical power to graphene based nano waveguide at 1550 nm for application in photonic integrated circuit

Optik ◽  
2019 ◽  
Vol 185 ◽  
pp. 636-642
Author(s):  
Abinash Panda ◽  
Anand Nayyar ◽  
Rajalakshmi Krishnamurthi ◽  
Partha Sarkar ◽  
G. Palai
Keyword(s):  
Integrated Circuit ◽  
Optical Power ◽  
Photonic Integrated Circuit

Programmable Integrated Photonics

2020 ◽  
Author(s):  
José Capmany ◽  
Daniel Pérez
Keyword(s):  
Integrated Circuit ◽  
Performance Monitoring ◽  
Low Cost ◽  
Limiting Factors ◽  
External Control ◽  
Integrated Photonics ◽  
New Paradigm ◽  
Photonic Integrated Circuit ◽  
And Performance ◽  
Application Fields

Programmable Integrated Photonics (PIP) is a new paradigm that aims at designing common integrated optical hardware configurations, which by suitable programming can implement a variety of functionalities that, in turn, can be exploited as basic operations in many application fields. Programmability enables by means of external control signals both chip reconfiguration for multifunction operation as well as chip stabilization against non-ideal operation due to fluctuations in environmental conditions and fabrication errors. Programming also allows activating parts of the chip, which are not essential for the implementation of a given functionality but can be of help in reducing noise levels through the diversion of undesired reflections. After some years where the Application Specific Photonic Integrated Circuit (ASPIC) paradigm has completely dominated the field of integrated optics, there is an increasing interest in PIP justified by the surge of a number of emerging applications that are and will be calling for true flexibility, reconfigurability as well as low-cost, compact and low-power consuming devices. This book aims to provide a comprehensive introduction to this emergent field covering aspects that range from the basic aspects of technologies and building photonic component blocks to the design alternatives and principles of complex programmable photonics circuits, their limiting factors, techniques for characterization and performance monitoring/control and their salient applications both in the classical as well as in the quantum information fields. The book concentrates and focuses mainly on the distinctive features of programmable photonics as compared to more traditional ASPIC approaches.

All-Silicon Photodetectors for Photonic Integrated Circuit Calibration

2021 ◽  
pp. 1-1
Author(s):  
Sarvagya Dwivedi ◽  
Jon Kjellman ◽  
Tangla David ◽  
Mathias Prost ◽  
Olga Syshchyk ◽  
...  
Keyword(s):  
Integrated Circuit ◽  
Photonic Integrated Circuit

scholarly journals A Review on Terahertz Technologies Accelerated by Silicon Photonics

Nanomaterials ◽  
2021 ◽  
Vol 11 (7) ◽  
pp. 1646
Author(s):  
Jingya Xie ◽  
Wangcheng Ye ◽  
Linjie Zhou ◽  
Xuguang Guo ◽  
Xiaofei Zang ◽  
...  
Keyword(s):  
Integrated Circuit ◽  
Silicon Photonics ◽  
Large Scale ◽  
Cost Effective ◽  
Single Chip ◽  
Photonic Integrated Circuit ◽  
Hybrid Silicon ◽  
The Cost ◽  
Silicon Based ◽  
Thz Applications

In the last couple of decades, terahertz (THz) technologies, which lie in the frequency gap between the infrared and microwaves, have been greatly enhanced and investigated due to possible opportunities in a plethora of THz applications, such as imaging, security, and wireless communications. Photonics has led the way to the generation, modulation, and detection of THz waves such as the photomixing technique. In tandem with these investigations, researchers have been exploring ways to use silicon photonics technologies for THz applications to leverage the cost-effective large-scale fabrication and integration opportunities that it would enable. Although silicon photonics has enabled the implementation of a large number of optical components for practical use, for THz integrated systems, we still face several challenges associated with high-quality hybrid silicon lasers, conversion efficiency, device integration, and fabrication. This paper provides an overview of recent progress in THz technologies based on silicon photonics or hybrid silicon photonics, including THz generation, detection, phase modulation, intensity modulation, and passive components. As silicon-based electronic and photonic circuits are further approaching THz frequencies, one single chip with electronics, photonics, and THz functions seems inevitable, resulting in the ultimate dream of a THz electronic–photonic integrated circuit.

Gallium Arsenide Photonic Integrated Circuit Platform for Tunable Laser Applications

2021 ◽  
pp. 1-1
Author(s):  
Paul Verrinder ◽  
Lei Wang ◽  
Joseph Fridlander ◽  
Fengqiao Sang ◽  
Victoria Rosborough ◽  
...  
Keyword(s):  
Gallium Arsenide ◽  
Integrated Circuit ◽  
Tunable Laser ◽  
Laser Applications ◽  
Photonic Integrated Circuit

A WDM receiver photonic integrated circuit with net on-chip gain

1994 ◽  
Vol 6 (8) ◽  
pp. 960-962 ◽  
Author(s):  
J.-M. Verdiell ◽  
T.L. Koch ◽  
B.I. Miller ◽  
M.E. Young ◽  
U. Koren ◽  
...  
Keyword(s):  
Integrated Circuit ◽  
Photonic Integrated Circuit ◽  
On Chip

scholarly journals Interband Cascade Photonic Integrated Circuits on Native III-V Chip

Sensors ◽  
2021 ◽  
Vol 21 (2) ◽  
pp. 599
Author(s):  
Jerry R. Meyer ◽  
Chul Soo Kim ◽  
Mijin Kim ◽  
Chadwick L. Canedy ◽  
Charles D. Merritt ◽  
...  
Keyword(s):  
Integrated Circuits ◽  
Integrated Circuit ◽  
Detection System ◽  
Laser Cavity ◽  
Building Blocks ◽  
Drive Power ◽  
Optical Elements ◽  
Photonic Integrated Circuit ◽  
Cleaved Facets ◽  
On Chip

We describe how a midwave infrared photonic integrated circuit (PIC) that combines lasers, detectors, passive waveguides, and other optical elements may be constructed on the native GaSb substrate of an interband cascade laser (ICL) structure. The active and passive building blocks may be used, for example, to fabricate an on-chip chemical detection system with a passive sensing waveguide that evanescently couples to an ambient sample gas. A variety of highly compact architectures are described, some of which incorporate both the sensing waveguide and detector into a laser cavity defined by two high-reflectivity cleaved facets. We also describe an edge-emitting laser configuration that optimizes stability by minimizing parasitic feedback from external optical elements, and which can potentially operate with lower drive power than any mid-IR laser now available. While ICL-based PICs processed on GaSb serve to illustrate the various configurations, many of the proposed concepts apply equally to quantum-cascade-laser (QCL)-based PICs processed on InP, and PICs that integrate III-V lasers and detectors on silicon. With mature processing, it should become possible to mass-produce hundreds of individual PICs on the same chip which, when singulated, will realize chemical sensing by an extremely compact and inexpensive package.

Design and characteristics of reflectivity tunable mirror with MZI and loop waveguide on SOI

2021 ◽  
Author(s):  
Yutaka Makihara ◽  
Moataz Eissa ◽  
Tomohiro AMEMIYA ◽  
Nobuhiko Nishiyama
Keyword(s):  
Phase Shift ◽  
Coupling Coefficient ◽  
Integrated Circuit ◽  
Silicon Photonics ◽  
Silicon On Insulator ◽  
Zehnder Interferometer ◽  
Directional Couplers ◽  
Photonic Integrated Circuit ◽  
Active Elements ◽  
Measurement Results

Abstract To achieve a reconfigurable photonic integrated circuit with active elements, we proposed a reflectivity tunable mirror constructed using a Mach–Zehnder interferometer (MZI) with a micro heater and loop waveguide on a silicon photonics platform. In this paper, the principle of the operation, design, fabrication, and measurement results of the mirror are presented. In theory, the phase shift dependence of the mirror relies on the coupling coefficient of the directional couplers of the MZI. When the coupling coefficient κ2 was 0.5 and 0.15, the reflection could be turned on and off with a phase shift of π/2 and π, respectively. The reflection power of the fabricated mirror on the silicon on insulator (SOI) substrate was changed by more than 20 dB by a phase shift. In addition, it was demonstrated that the phase shift dependence of the mirror changes with the coupling coefficient of the fabricated devices.

Sign in / Sign up

Export Citation Format

Share Document