Efficient spin-orbit-torque magnetization switching in a spin-orbit ferromagnetic-semiconductor (Ga,Mn)As single layer

2021 ◽  
Author(s):  
Shinobu Ohya ◽  
Miao Jiang ◽  
Hirokatsu Asahara ◽  
Shoichi Sato ◽  
Masaaki Tanaka
Keyword(s):  
Single Layer ◽  
Ferromagnetic Semiconductor ◽  
Spin Orbit ◽  
Magnetization Switching

scholarly journals Controllable field-free switching of perpendicular magnetization through bulk spin-orbit torque in symmetry-broken ferromagnetic films

2021 ◽  
Vol 12 (1) ◽  
Author(s):  
Xuejie Xie ◽  
Xiaonan Zhao ◽  
Yanan Dong ◽  
Xianlin Qu ◽  
Kun Zheng ◽  
...  
Keyword(s):  
Magnetic Field ◽  
Domain Walls ◽  
Single Layer ◽  
Ferromagnetic Film ◽  
Effective Field ◽  
Composition Gradient ◽  
Spin Orbit ◽  
Interlayer Exchange Coupling ◽  
Magnetization Switching ◽  
Perpendicular Magnetization

AbstractProgrammable magnetic field-free manipulation of perpendicular magnetization switching is essential for the development of ultralow-power spintronic devices. However, the magnetization in a centrosymmetric single-layer ferromagnetic film cannot be switched directly by passing an electrical current in itself. Here, we demonstrate a repeatable bulk spin-orbit torque (SOT) switching of the perpendicularly magnetized CoPt alloy single-layer films by introducing a composition gradient in the thickness direction to break the inversion symmetry. Experimental results reveal that the bulk SOT-induced effective field on the domain walls leads to the domain walls motion and magnetization switching. Moreover, magnetic field-free perpendicular magnetization switching caused by SOT and its switching polarity (clockwise or counterclockwise) can be reversibly controlled in the IrMn/Co/Ru/CoPt heterojunctions based on the exchange bias and interlayer exchange coupling. This unique composition gradient approach accompanied with electrically controllable SOT magnetization switching provides a promising strategy to access energy-efficient control of memory and logic devices.

scholarly journals Magnetization switching driven by current-induced torque from weakly spin-orbit coupled Zr

2020 ◽  
Vol 2 (1) ◽  
Author(s):  
Z. C. Zheng ◽  
Q. X. Guo ◽  
D. Jo ◽  
D. Go ◽  
L. H. Wang ◽  
...  
Keyword(s):  
Spin Orbit ◽  
Magnetization Switching

scholarly journals Magnetization switching induced by spin–orbit torque from Co2MnGa magnetic Weyl semimetal thin films

2021 ◽  
Vol 118 (6) ◽  
pp. 062402
Author(s):  
Ke Tang ◽  
Zhenchao Wen ◽  
Yong-Chang Lau ◽  
Hiroaki Sukegawa ◽  
Takeshi Seki ◽  
...  
Keyword(s):  
Thin Films ◽  
Spin Orbit ◽  
Magnetization Switching ◽  
Weyl Semimetal

scholarly journals Ultrafast magnetization switching by spin-orbit torques

2014 ◽  
Vol 105 (21) ◽  
pp. 212402 ◽  
Author(s):  
Kevin Garello ◽  
Can Onur Avci ◽  
Ioan Mihai Miron ◽  
Manuel Baumgartner ◽  
Abhijit Ghosh ◽  
...  
Keyword(s):  
Spin Orbit ◽  
Magnetization Switching ◽  
Ultrafast Magnetization

Plasmon modes in N-layer silicene structures

2021 ◽  
Author(s):  
Men Nguyen Van
Keyword(s):  
Electric Field ◽  
Random Phase ◽  
Single Layer ◽  
Plasmon Mode ◽  
Orbit Coupling ◽  
Collective Excitations ◽  
Spin Orbit Coupling ◽  
Spin Orbit ◽  
Number Of Layers ◽  
Plasmon Modes

Abstract We investigate the plasmon properties in N-layer silicene systems consisting of N, up to 6, parallel single-layer silicene under the application of an out-of-plane electric field, taking into account the spin-orbit coupling within the random-phase approximation. Numerical calculations demonstrate that N undamped plasmon modes, including one in-phase optical and (N-1) out-of-phase acoustic modes, continue mainly outside the single-particle excitation area of the system. As the number of layers increases, the frequencies of plasmonic collective excitations increase and can become much larger than that in single layer silicene, more significant for high-frequency modes. The optical (acoustic) plasmon mode(s) noticeably (slightly) decreases with the increase in the bandgap and weakly depends on the number of layers. We observe that the phase transition of the system weakly affects the plasmon properties, and as the bandgap caused by the spin-orbit coupling equal that caused by the external electric field, the plasmonic collective excitations and their broadening function in multilayer silicene behave similarly to those in multilayer gapless graphene structures. Our investigations show that plasmon curves in the system move toward that in single layer silicene as the separation increases, and the impacts of this factor can be raised by a large number of layers in the system. Finally, we find that the imbalanced carrier density between silicene layers significantly decreases plasmon frequencies, depending on the number of layers.

Sign in / Sign up

Export Citation Format

Share Document