Modulation Doping with a 2D Magnet

2021 ◽  
Author(s):  
Kenneth Burch
Keyword(s):  
Modulation Doping

Modulation doping and observation of the integral quantum Hall effect in PbTe/Pb1−xEuxTe multiquantum wells

1993 ◽  
Vol 63 (21) ◽  
pp. 2908-2910 ◽  
Author(s):  
G. Springholz ◽  
G. Ihninger ◽  
G. Bauer ◽  
M. M. Olver ◽  
J. Z. Pastalan ◽  
...  
Keyword(s):  
Hall Effect ◽  
Quantum Hall Effect ◽  
Quantum Hall ◽  
Modulation Doping ◽  
Integral Quantum

Tapered InGaAs/GaAs MQW lasers with carbon modulation-doping and reduced filamentation

1995 ◽  
Vol 31 (8) ◽  
pp. 651 ◽  
Author(s):  
J.D. Ralston ◽  
F.R. Laughton ◽  
P. Chazan ◽  
E.C. Larkins ◽  
M. Maier ◽  
...  
Keyword(s):  
Modulation Doping

An AlGaAs-GaAs-based RCE MSM photodetector with delta modulation doping

2003 ◽  
Vol 24 (5) ◽  
pp. 312-314 ◽  
Author(s):  
Xiying Chen ◽  
B. Nabet ◽  
A. Cola ◽  
F. Quaranta ◽  
M. Currie
Keyword(s):  
Modulation Doping ◽  
Msm Photodetector ◽  
Delta Modulation

Modulation doping in the Si/SiGe heterosystem

1992 ◽  
Vol T45 ◽  
pp. 178-180 ◽  
Author(s):  
F Schäffler
Keyword(s):  
Modulation Doping

Enhanced electrical performance by modulation-doping in AlGaN-based deep ultraviolet light-emitting diodes

2019 ◽  
Vol 33 (08) ◽  
pp. 1950088
Author(s):  
Sipan Yang ◽  
Miao He ◽  
Jianchang Yan ◽  
Kunhua Wen ◽  
Junxi Wang ◽  
...  
Keyword(s):  
Ultraviolet Light ◽  
Light Emitting Diodes ◽  
Light Emission ◽  
Electrical Performance ◽  
Algan Layer ◽  
Modulation Doping ◽  
Light Emitting ◽  
Growth Method ◽  
Deep Ultraviolet ◽  
Ultraviolet Light Emitting Diodes

Through the silicon modulation-doping (MD) growth method, the electrical performance of AlGaN-based deep ultraviolet light-emitting diodes (DUV-LEDs) is improved by replacing the commonly uniform-doped (UD) method of n-AlGaN layer. The electroluminescence characterisic measurements demonstrate the MD growth method could effectively enhance the light emission intensity. Both the forward voltage and reverse leakage current of the MD samples are obviously reduced compared to those of the UD sample. Due to the existence of periodic Si-MD superlattices in n-AlGaN layers, which may behave like a series of capacitors, the built-in electric fields are formed. Both the measured capacitance–voltage (C–V) characteristics, and related photoluminescence (PL) intensity with the Si-MD growth method are enhanced. In detail, the effects of these capacitors can enhance the peak internal capacitance up to 370 pF in the MD sample, whereas the UD sample is only 180 pF. The results also mean that with better current spreading ability in the MD sample, the MD processes can effectively enhance the efficiency and reliability of DUV-LEDs. Thus, the investigations of the Si-MD growth methods may be useful for improving the electrical performance of DUV-LEDs in future works. Meanwhile, this investigation may partly suggest the minor crystalline quality improvements in the epi-layers succeeding the MD n-AlGaN layer.

scholarly journals Modeling the effects of p-modulation doping in InAs quantum dot devices

2021 ◽  
Author(s):  
Benjamin Maglio ◽  
Lydia Jarvis ◽  
Mingchu Tang ◽  
Huiyun Liu ◽  
Peter M. Smowton
Keyword(s):  
Quantum Dot ◽  
Modulation Doping ◽  
Inas Quantum Dot

Fermi-edge singularity in the luminescence spectra of II-VI modulation-doping quantum wells

1997 ◽  
Vol 55 (12) ◽  
pp. R7391-R7393 ◽  
Author(s):  
G. Coli' ◽  
L. Calcagnile ◽  
P. V. Giugno ◽  
R. Cingolani ◽  
R. Rinaldi ◽  
...  
Keyword(s):  
Quantum Wells ◽  
Luminescence Spectra ◽  
Modulation Doping ◽  
Edge Singularity ◽  
Fermi Edge ◽  
Fermi Edge Singularity
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