Supercontinuum lasers for sorting and device characterization

Author(s):  
Basil Garabet
1990 ◽  
Vol 29 (21) ◽  
pp. 3110
Author(s):  
Eric T. Koenig ◽  
Mohammad A. Karim

2004 ◽  
Vol 27 (2) ◽  
pp. 61-67
Author(s):  
S. Dib ◽  
C. Salame ◽  
N. Toufik ◽  
A. Khoury ◽  
F. Pélanchon ◽  
...  

A new method for the extraction of junction parameters from a description of the current–voltage characteristic is developed. A simulation is performed and a high accuracy is obtained for the determination of the singleexponential model parameters. The method is easy to implement in a control process for device characterization. An application, achieved to observe the degradation of the emitter–base junction of a bipolar transistor during an aging experiment, shows that the evolutions of the single exponential model parameters versus time introduce a means for degradation quantification.


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