Direct imaging of current-induced antiferromagnetic switching revealing a pure thermomagnetoelastic switching mechanism in NiO

2021 ◽  
Author(s):  
Hendrik Meer ◽  
Felix Schreiber ◽  
Christin Schmitt ◽  
Rafael Ramos ◽  
Eiji Saitoh ◽  
...  
Keyword(s):  
Direct Imaging ◽  
Switching Mechanism

scholarly journals Direct Imaging of Current-Induced Antiferromagnetic Switching Revealing a Pure Thermomagnetoelastic Switching Mechanism in NiO

Nano Letters ◽  
2020 ◽  
Author(s):  
Hendrik Meer ◽  
Felix Schreiber ◽  
Christin Schmitt ◽  
Rafael Ramos ◽  
Eiji Saitoh ◽  
...  
Keyword(s):  
Direct Imaging ◽  
Switching Mechanism

Hierarchical switching in a multi-dimensional task space is not induced by specific task cues

2001 ◽  
Vol 209 (2) ◽  
pp. 105-117 ◽  
Author(s):  
Thomas Kleinsorge ◽  
Herbert Heuer ◽  
Volker Schmidtke
Keyword(s):  
Specific Task ◽  
Task Space ◽  
Basic Pattern ◽  
Task Representation ◽  
Switching Mechanism ◽  
Factorial Combination ◽  
Individual Task ◽  
The Individual ◽  
The Way

Summary. When participants have to shift between four tasks that result from a factorial combination of the task dimensions judgment (numerical vs. spatial) and mapping (compatible vs. incompatible), a characteristic profile of shift costs can be observed that is suggestive of a hierarchical switching mechanism that operates upon a dimensionally ordered task representation, with judgment on the top and the response on the bottom of the task hierarchy ( Kleinsorge & Heuer, 1999 ). This switching mechanism results in unintentional shifts on lower levels of the task hierarchy whenever a shift on a higher level has to be performed, leading to non-shift costs on the lower levels. We investigated whether this profile depends on the way in which the individual task dimensions are cued. When the cues for the task dimensions were exchanged, the basic pattern of shift costs was replicated with only minor modifications. This indicates that the postulated hierarchical switching mechanism operates independently of the specifics of task cueing.

Investigation of Switching Mechanism in HfO2-Based Oxide Resistive Memories by In-Situ Transmission Electron Microscopy and Electron Energy Loss Spectroscopy

2017 ◽  
Author(s):  
T. Dewolf ◽  
D. Cooper ◽  
N. Bernier ◽  
V. Delaye ◽  
A. Grenier ◽  
...  
Keyword(s):  
Electron Microscopy ◽  
Transmission Electron Microscopy ◽  
Energy Loss ◽  
Electron Energy ◽  
Electron Energy Loss Spectroscopy ◽  
Hafnium Dioxide ◽  
Switching Mechanism ◽  
Transmission Electron ◽  
Electron Energy Loss

Abstract Forming and breaking a nanometer-sized conductive area are commonly accepted as the physical phenomenon involved in the switching mechanism of oxide resistive random access memories (OxRRAM). This study investigates a state-of-the-art OxRRAM device by in-situ transmission electron microscopy (TEM). Combining high spatial resolution obtained with a very small probe scanned over the area of interest of the sample and chemical analyses with electron energy loss spectroscopy, the local chemical state of the device can be compared before and after applying an electrical bias. This in-situ approach allows simultaneous TEM observation and memory cell operation. After the in-situ forming, a filamentary migration of titanium within the dielectric hafnium dioxide layer has been evidenced. This migration may be at the origin of the conductive path responsible for the low and high resistive states of the memory.

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