Efficient localized surface plasmon source enabled by resonant inelastic electron tunneling

2021 ◽  
Author(s):  
Zhaowei Liu
Keyword(s):  
Surface Plasmon ◽  
Electron Tunneling ◽  
Localized Surface Plasmon ◽  
Inelastic Electron ◽  
Inelastic Electron Tunneling

scholarly journals Highly-efficient electrically-driven localized surface plasmon source enabled by resonant inelastic electron tunneling

2021 ◽  
Vol 12 (1) ◽  
Author(s):  
Haoliang Qian ◽  
Shilong Li ◽  
Su-Wen Hsu ◽  
Ching-Fu Chen ◽  
Fanglin Tian ◽  
...  
Keyword(s):  
Surface Plasmon ◽  
High Performance ◽  
Near Infrared ◽  
Electron Tunneling ◽  
Localized Surface Plasmon ◽  
Inelastic Electron ◽  
Major Barrier ◽  
Highly Efficient ◽  
Sensing Applications ◽  
Inelastic Electron Tunneling

AbstractOn-chip plasmonic circuitry offers a promising route to meet the ever-increasing requirement for device density and data bandwidth in information processing. As the key building block, electrically-driven nanoscale plasmonic sources such as nanoLEDs, nanolasers, and nanojunctions have attracted intense interest in recent years. Among them, surface plasmon (SP) sources based on inelastic electron tunneling (IET) have been demonstrated as an appealing candidate owing to the ultrafast quantum-mechanical tunneling response and great tunability. However, the major barrier to the demonstrated IET-based SP sources is their low SP excitation efficiency due to the fact that elastic tunneling of electrons is much more efficient than inelastic tunneling. Here, we remove this barrier by introducing resonant inelastic electron tunneling (RIET)—follow a recent theoretical proposal—at the visible/near-infrared (NIR) frequencies and demonstrate highly-efficient electrically-driven SP sources. In our system, RIET is supported by a TiN/Al2O3 metallic quantum well (MQW) heterostructure, while monocrystalline silver nanorods (AgNRs) were used for the SP generation (localized surface plasmons (LSPs)). In principle, this RIET approach can push the external quantum efficiency (EQE) close to unity, opening up a new era of SP sources for not only high-performance plasmonic circuitry, but also advanced optical sensing applications.

Temperature dependence of the inelastic electron tunneling

2006 ◽  
Vol 32 (9) ◽  
pp. 727-734
Author(s):  
H. Nishioka ◽  
T. Yamato ◽  
T. Kakitani
Keyword(s):  
Temperature Dependence ◽  
Electron Tunneling ◽  
Inelastic Electron ◽  
Inelastic Electron Tunneling
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