Calculation and fitting of responsivity and quantum efficiency based on HgCdTe detector at wide band

2021 ◽  
Author(s):  
Haiteng Xu ◽  
Yan Wen ◽  
Qiang Chen ◽  
Lidong Bai ◽  
Jian Xiong ◽  
...  
Keyword(s):  
Quantum Efficiency ◽  
Wide Band ◽  
Hgcdte Detector

Terahertz and infrared photodetectors based on multiple graphene layer and nanoribbon structures

2012 ◽  
Vol 20 (1) ◽  
Author(s):  
V. Ryzhii ◽  
N. Ryabova ◽  
M. Ryzhii ◽  
N. Baryshnikov ◽  
V. Karasik ◽  
...  
Keyword(s):  
Quantum Efficiency ◽  
Graphene Layer ◽  
Elevated Temperatures ◽  
Radiation Spectrum ◽  
Wide Band ◽  
Graphene Nanoribbon ◽  
Infrared Photodetectors ◽  
High Responsivity ◽  
New Concepts ◽  
Traditional Structures

AbstractWe consider new concepts of terahertz and infrared photodetectors based on multiple graphene layer and multiple graphene nanoribbon structures and we evaluate their responsivity and detectivity. The performance of the detectors under consideration is compared with that of photodetectors made of the traditional structures. We show that due to high values of the quantum efficiency and relatively low rates of thermogeneration, the graphene-based detectors can exhibit high responsivity and detectivity at elevated temperatures in a wide radiation spectrum and can substantially surpass other detectors. The detector being discussed can be used in different wide-band and multi-colour terahertz and infrared systems.

scholarly journals Optical Response Study of the Al/a-Sic:H Schottky Diode for Different Substrate Temperatures of the R.F. Sputtered a-Sic:H Thin Film

2003 ◽  
Vol 26 (2) ◽  
pp. 63-70 ◽  
Author(s):  
L. Magafas
Keyword(s):  
Thin Film ◽  
Quantum Efficiency ◽  
Spectral Response ◽  
Schottky Diodes ◽  
Wavelength Region ◽  
Wide Band ◽  
Optical Response ◽  
Slight Variation ◽  
Reverse Bias Voltage ◽  
Substrate Temperatures

In the present work, Schottky diodes of Al/a-SiC:H included in the structure Al/a-SiC:H/c-Si(n)/Al were fabricated and their optical response was studied in the wavelength region from 350 nm up to 1000 nm, for different substrate temperatures,Ts(from 30°C up to 290°C) of the r.f. sputtered a-SiC:H thin film. The spectral response of these structures exhibits two maximum values of quantum efficiency. The first maximum is presented at wavelengthλ≅525nm and the other atλ=850850 nm, which are attributed to the Aa-SiC:H Schottky junction and the a-SiC:H/c-Si(n) isotype heterojunction, respectively. The position of the first maximum owing to the Al/a-SiC:H junction as well as the values of quantum efficiency, for the range of wavelengths from 350 nm up to 700 nm, depends on the substrate temperature,Ts, of the a-SiC:H thin film. In the case thatTsis 120°C, the spectral response of the Al/a-SiC:H/c-Si(n)/Al structure for a reverse bias voltageV= -2V exhibits high values of quantum efficiency (up to 40%) with slight variation in the range of wavelength from 475 nm up to 925 nm, making this structure interesting as a wide band optical sensor device. Finally, the minority carrier (holes) diffusion length of a-SiC:H forTS=120°Cwas calculated and it was found to be≅2.200Å.

Seven-colour photometry at the Geneva Observatory

1966 ◽  
Vol 24 ◽  
pp. 262-266 ◽  
Author(s):  
M. Golay
Keyword(s):  
Wide Band ◽  
Electric System ◽  
Band Type

During the last 5 years, we have developed a seven-colour photometry at the Geneva Observatory. Our multicolour photo-electric system is of a wide-band type; the bandwidth being about 500Å for four filters. The three others are similar to theUBVsystem. In Table 1 we give the filter combinations used in our photometry (1).

TEM and cathodoluminescence of precipitates in II-VI semiconductors

1988 ◽  
Vol 46 ◽  
pp. 488-489
Author(s):  
Joanna L. Batstone
Keyword(s):  
Crystal Growth ◽  
Band Gap ◽  
Local Strain ◽  
Wide Band ◽  
Optoelectronic Device ◽  
Wide Band Gap ◽  
Bulk Crystal Growth ◽  
Transmission Electron ◽  
Device Applications ◽  
Stoichiometry Control

Interest in II-VI semiconductors centres around optoelectronic device applications. The wide band gap II-VI semiconductors such as ZnS, ZnSe and ZnTe have been used in lasers and electroluminescent displays yielding room temperature blue luminescence. The narrow gap II-VI semiconductors such as CdTe and HgxCd1-x Te are currently used for infrared detectors, where the band gap can be varied continuously by changing the alloy composition x.Two major sources of precipitation can be identified in II-VI materials; (i) dopant introduction leading to local variations in concentration and subsequent precipitation and (ii) Te precipitation in ZnTe, CdTe and HgCdTe due to native point defects which arise from problems associated with stoichiometry control during crystal growth. Precipitation is observed in both bulk crystal growth and epitaxial growth and is frequently associated with segregation and precipitation at dislocations and grain boundaries. Precipitation has been observed using transmission electron microscopy (TEM) which is sensitive to local strain fields around inclusions.

Electron microscopic characterization of diamond thin films and substrates for diamond heteroepitaxial growth

1989 ◽  
Vol 47 ◽  
pp. 592-593
Author(s):  
J.B. Posthill ◽  
R.P. Burns ◽  
R.A. Rudder ◽  
Y.H. Lee ◽  
R.J. Markunas ◽  
...  
Keyword(s):  
Thin Films ◽  
Wide Band ◽  
Deposition Process ◽  
Heteroepitaxial Growth ◽  
Electron Microscopic ◽  
Wide Band Gap ◽  
Lattice Matching ◽  
Different Types ◽  
Diamond Thin Films

Because of diamond’s wide band gap, high thermal conductivity, high breakdown voltage and high radiation resistance, there is a growing interest in developing diamond-based devices for several new and demanding electronic applications. In developing this technology, there are several new challenges to be overcome. Much of our effort has been directed at developing a diamond deposition process that will permit controlled, epitaxial growth. Also, because of cost and size considerations, it is mandatory that a non-native substrate be developed for heteroepitaxial nucleation and growth of diamond thin films. To this end, we are currently investigating the use of Ni single crystals on which different types of epitaxial metals are grown by molecular beam epitaxy (MBE) for lattice matching to diamond as well as surface chemistry modification. This contribution reports briefly on our microscopic observations that are integral to these endeavors.

Thermal lens determination of fluorescence quantum efficiency of3F4level of Tm3+ions in solids

2005 ◽  
Vol 125 ◽  
pp. 193-196 ◽  
Author(s):  
S. L. Oliveira ◽  
S. M. Lima ◽  
T. Catunda ◽  
H. Vargas ◽  
L. A.O. Nunes ◽  
...  
Keyword(s):  
Quantum Efficiency ◽  
Thermal Lens
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