High electrical conducting Si-doped Ga2O3 transparent oxide semiconductor by pulsed laser deposition

Author(s):  
Hyung Min Jeon
2019 ◽  
Vol 7 (21) ◽  
pp. 6332-6336 ◽  
Author(s):  
Makoto Minohara ◽  
Naoto Kikuchi ◽  
Yoshiyuki Yoshida ◽  
Hiroshi Kumigashira ◽  
Yoshihiro Aiura

Stannous oxide, SnO, is a promising material for practical applications as a p-type transparent oxide semiconductor. The hole mobility of SnO epitaxial films grown by pulsed laser deposition can be improved by reducing the growth temperature.


2020 ◽  
Vol 116 (2) ◽  
pp. 022103 ◽  
Author(s):  
Mian Wei ◽  
Anup V. Sanchela ◽  
Bin Feng ◽  
Yuichi Ikuhara ◽  
Hai Jun Cho ◽  
...  

2009 ◽  
Vol 11 (10) ◽  
pp. 1783-1787
Author(s):  
T. Csákó ◽  
O. Berkesi ◽  
I. Kovács ◽  
G. Radnóczi ◽  
T. Szörényi

APL Materials ◽  
2018 ◽  
Vol 6 (10) ◽  
pp. 101102 ◽  
Author(s):  
Kevin D. Leedy ◽  
Kelson D. Chabak ◽  
Vladimir Vasilyev ◽  
David C. Look ◽  
Krishnamurthy Mahalingam ◽  
...  

2015 ◽  
Vol 70 (1) ◽  
pp. 10102
Author(s):  
Simeon Simeonov ◽  
Silvia Bakalova ◽  
Anna Szekeres ◽  
Ivaylo Minkov ◽  
Gabriel Socol ◽  
...  

2020 ◽  
pp. 2000362 ◽  
Author(s):  
Sergiy Khartsev ◽  
Nils Nordell ◽  
Mattias Hammar ◽  
Juris Purans ◽  
Anders Hallén

2015 ◽  
Vol 421 ◽  
pp. 23-26 ◽  
Author(s):  
Takayoshi Oshima ◽  
Keitaro Matsuyama ◽  
Kohei Yoshimatsu ◽  
Akira Ohtomo

Sign in / Sign up

Export Citation Format

Share Document