scholarly journals Graphene oxide for enhanced optical nonlinear performance in CMOS compatible integrated devices

2021 ◽  
Author(s):  
Yuning Zhang ◽  
Jiayang Wu ◽  
Yang Qu ◽  
Yunyi Yang ◽  
Linnan Jia ◽  
...  
Keyword(s):  
Graphene Oxide ◽  
Integrated Devices ◽  
Cmos Compatible ◽  
Nonlinear Performance

scholarly journals Two dimensional graphene oxide films for enhanced optical nonlinear performance in CMOS compatible integrated devices

2021 ◽  
Author(s):  
David Moss
Keyword(s):  
Kerr Nonlinearity ◽  
Optical Nonlinearity ◽  
Four Wave Mixing ◽  
Silicon On Insulator ◽  
Ring Resonators ◽  
Wave Mixing ◽  
Two Dimensional ◽  
Integrated Devices ◽  
Cmos Compatible ◽  
Nonlinear Performance

<p>We integrate GO films with silicon-on-insulator nanowires (SOI), high index doped silica glass (Hydex) and silicon nitride (SiN) waveguides and ring resonators, to demonstrate an enhanced optical nonlinearity including Kerr nonlinearity and four-wave mixing (FWM).</p>

scholarly journals Two dimensional graphene oxide films for enhanced optical nonlinear performance in CMOS compatible integrated devices

2021 ◽  
Author(s):  
David Moss
Keyword(s):  
Kerr Nonlinearity ◽  
Optical Nonlinearity ◽  
Four Wave Mixing ◽  
Silicon On Insulator ◽  
Ring Resonators ◽  
Wave Mixing ◽  
Two Dimensional ◽  
Integrated Devices ◽  
Cmos Compatible ◽  
Nonlinear Performance

<p>We integrate GO films with silicon-on-insulator nanowires (SOI), high index doped silica glass (Hydex) and silicon nitride (SiN) waveguides and ring resonators, to demonstrate an enhanced optical nonlinearity including Kerr nonlinearity and four-wave mixing (FWM).</p>

A frozen matrix hybrid optical nonlinear system enhanced by a particle lens

Nanoscale ◽  
2015 ◽  
Vol 7 (36) ◽  
pp. 14982-14988 ◽  
Author(s):  
Lianwei Chen ◽  
Xiaorui Zheng ◽  
Zheren Du ◽  
Baohua Jia ◽  
Min Gu ◽  
...  
Keyword(s):  
Graphene Oxide ◽  
Nonlinear System ◽  
Hybrid System ◽  
Nonlinear Performance

In this work, a Graphene Oxide (GO) nano-sheet and SiO2 micro-bead hybrid system based on a frozen matrix was investigated for its enhanced optical nonlinear performance.

scholarly journals Enhanced Optical Nonlinear Performance with Integrated 2D Graphene Oxide Thin Films in CMOS Compatible Devices

2021 ◽  
Author(s):  
Yuning Zhang ◽  
Jiayang Wu ◽  
David Moss
Keyword(s):  
Graphene Oxide ◽  
Nonlinear Optics ◽  
Kerr Nonlinearity ◽  
Silicon On Insulator ◽  
Oxide Semiconductor ◽  
Ring Resonators ◽  
Layer By Layer ◽  
Large Area ◽  
Highly Nonlinear ◽  
Cmos Compatible

We report enhanced nonlinear optics in complementary metal-oxide-semiconductor (CMOS) compatible photonic platforms through the use of layered two-dimensional (2D) graphene oxide (GO) films. We integrate GO films with silicon-on-insulator nanowires (SOI), high index doped silica glass (Hydex) and silicon nitride (SiN) waveguides and ring resonators, to demonstrate an enhanced optical nonlinearity including Kerr nonlinearity and four-wave mixing (FWM). The GO films are integrated using a large-area, transfer-free, layer-by-layer method while the film placement and size are controlled by photolithography. In SOI nanowires we observe a dramatic enhancement in both the Kerr nonlinearity and nonlinear figure of merit (FOM) due to the highly nonlinear GO films. Self-phase modulation (SPM) measurements show significant spectral broadening enhancement for SOI nanowires coated with patterned films of GO. The dependence of GO&rsquo;s Kerr nonlinearity on layer number and pulse energy shows trends of the layered GO films from 2D to quasi bulk-like behavior. The nonlinear parameter of GO coated SOI nanowires is increased 16 folds, with the nonlinear FOM increasing over 20 times to FOM &gt; 5. We also observe an improved FWM efficiency in SiN waveguides integrated with 2D layered GO films. FWM measurements for samples with different numbers of GO layers and at different pump powers are performed, achieving up to &asymp;7.3 dB conversion efficiency (CE) enhancement for a uniformly coated device with 1 layer of GO and &asymp;9.1 dB for a patterned device with 5 layers of GO. These results reveal the strong potential of GO films to improve the nonlinear optics of silicon, Hydex and SiN photonic devices.

Enhanced Kerr nonlinear performance in graphene oxide-coated silicon and silicon nitride waveguides

2021 ◽  
Author(s):  
Yuning Zhang ◽  
Jiayang Wu ◽  
Yunyi Yang ◽  
Yang Qu ◽  
Linnan Jia ◽  
...  
Keyword(s):  
Graphene Oxide ◽  
Silicon Nitride ◽  
Nonlinear Performance

scholarly journals Enhanced optical nonlinear performance with 2D graphene oxide thin films integrated with CMOS compatible devices

2021 ◽  
Author(s):  
David Moss
Keyword(s):  
Graphene Oxide ◽  
Nonlinear Optics ◽  
Kerr Nonlinearity ◽  
Silicon On Insulator ◽  
Oxide Semiconductor ◽  
Ring Resonators ◽  
Layer By Layer ◽  
Large Area ◽  
Highly Nonlinear ◽  
Cmos Compatible

We report enhanced nonlinear optics in complementary metal-oxide-semiconductor (CMOS) compatible photonic platforms through the use of layered two-dimensional (2D) graphene oxide (GO) films. We integrate GO films with silicon-on-insulator nanowires (SOI), high index doped silica glass (Hydex) and silicon nitride (SiN) waveguides and ring resonators, to demonstrate an enhanced optical nonlinearity including Kerr nonlinearity and four-wave mixing (FWM). The GO films are integrated using a large-area, transfer-free, layer-by-layer method while the film placement and size are controlled by photolithography. In SOI nanowires we observe a dramatic enhancement in both the Kerr nonlinearity and nonlinear figure of merit (FOM) due to the highly nonlinear GO films. Self-phase modulation (SPM) measurements show significant spectral broadening enhancement for SOI nanowires coated with patterned films of GO. The dependence of GO’s Kerr nonlinearity on layer number and pulse energy shows trends of the layered GO films from 2D to quasi bulk-like behavior. The nonlinear parameter of GO coated SOI nanowires is increased 16 folds, with the nonlinear FOM increasing over 20 times to FOM &gt; 5. We also observe an improved FWM efficiency in SiN waveguides integrated with 2D layered GO films. FWM measurements for samples with different numbers of GO layers and at different pump powers are performed, achieving up to ≈7.3 dB conversion efficiency (CE) enhancement for a uniformly coated device with 1 layer of GO and ≈9.1 dB for a patterned device with 5 layers of GO. These results reveal the strong potential of GO films to improve the nonlinear optics of silicon, Hydex and SiN photonic devices.

Imaging nanostructures on ablated kapton polymide

1993 ◽  
Vol 51 ◽  
pp. 872-873
Author(s):  
Daniel L. Callahan ◽  
H. M. Phillips ◽  
R. Sauerbrey
Keyword(s):  
Electron Microscopy ◽  
Polymer Surface ◽  
Grating Period ◽  
Laser Wavelength ◽  
Integrated Devices ◽  
Transmission Electron ◽  
Excimer Laser Irradiation ◽  
Produce Line ◽  
Line Patterns ◽  
Anisotropic Conduction

Excimer laser irradiation has been used to interferometrically ablate submicron line patterns on to Kapton polyimide. Such patterned material may exhibit highly anisotropic conduction as was predicted from previous studies showing enhanced conductivity from uniformly ablated material. We are currently exploiting this phenomenon to create integrated devices using conventional polymers as both dielectrics and conductors. Extensive scanning electron microscopy (SEM) and limited transmission electron microscopy (TEM) have been conducted in order to characterize the morphology of such patterned nanostructures as a function of processing conditions.The ablation technique employed produces an interference pattern on the polymer surface of period equal to half that of a diffraction grating period, independent of the laser wavelength. In these experiments, a 328 nm grating has been used to produce line patterns of 164 nm line-spacings as shown in Figures 1 and 2. A 200 Å Au coating has been used to both prevent charging and, perhaps more importantly, enhance contrast.

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