Novel photoconductive antennas based on rhodium doped InGaAs with 637 µW emitted THz power

2021 ◽  
Author(s):  
Robert B. Kohlhaas ◽  
Steffen Breuer ◽  
Lars Liebermeister ◽  
Simon Nellen ◽  
Milan Deumer ◽  
...  
Keyword(s):  
Photoconductive Antennas ◽  
Thz Power

scholarly journals Efficiency of Photoconductive Terahertz Generation in Nitrogen-Doped Diamonds

Photonics ◽  
2021 ◽  
Vol 9 (1) ◽  
pp. 18
Author(s):  
Vitali V. Kononenko ◽  
Maxim S. Komlenok ◽  
Pavel A. Chizhov ◽  
Vladimir V. Bukin ◽  
Vladislava V. Bulgakova ◽  
...  
Keyword(s):  
Femtosecond Laser ◽  
Terahertz Radiation ◽  
Optical Excitation ◽  
Photoconductive Antennas ◽  
Optical Absorbance ◽  
Nitrogen Doped ◽  
Nitrogen Concentrations ◽  
Photoconductive Emitter ◽  
Monocrystalline Diamond ◽  
Thz Power

The efficiency of the generation of terahertz radiation from nitrogen-doped (∼0.1–100 ppm) diamonds was investigated. The synthetic polycrystalline and monocrystalline diamond substrates were pumped by a 400 nm femtosecond laser and tested for the photoconductive emitter operation. The dependency of the emitted THz power on the intensity of the optical excitation was measured. The nitrogen concentrations of the diamonds involved were measured from the optical absorbance, which was found to crucially depend on the synthesis technique. The observed correlation between the doping level and the level of the performance of diamond-based antennas demonstrates the prospects of doped diamond as a material for highly efficient large-aperture photoconductive antennas.

scholarly journals Photoconductive Antennas: Effects of Crystallographic Orientation of GaAs Substrate and the Period of Plasmon Grid on THz Antenna Performance (Ann. Phys. 8/2021)

2021 ◽  
Vol 533 (8) ◽  
pp. 2170025
Author(s):  
Arseniy M. Buryakov ◽  
Maxim S. Ivanov ◽  
Dinar I. Khusyainov ◽  
Anastasia V. Gorbatova ◽  
Vladislav R. Bilyk ◽  
...  
Keyword(s):  
Crystallographic Orientation ◽  
Gaas Substrate ◽  
Photoconductive Antennas ◽  
Antenna Performance ◽  
Thz Antenna

637 μW emitted terahertz power from photoconductive antennas based on rhodium doped InGaAs

2020 ◽  
Vol 117 (13) ◽  
pp. 131105
Author(s):  
R. B. Kohlhaas ◽  
S. Breuer ◽  
L. Liebermeister ◽  
S. Nellen ◽  
M. Deumer ◽  
...  
Keyword(s):  
Photoconductive Antennas

Large area bolometers for THz power measurements

1994 ◽  
Vol 42 (4) ◽  
pp. 758-760 ◽  
Author(s):  
C.C. Ling ◽  
J.C. Landry ◽  
H. Davee ◽  
G. Chin ◽  
G.M. Rebeiz
Keyword(s):  
Large Area ◽  
Power Measurements ◽  
Thz Power

Terahertz Emission Enhancement of Gallium Arsenide-based Photoconductive Antennas by Silicon Nanowire Coating

2021 ◽  
pp. 1-1
Author(s):  
Neil Irvin Cabello ◽  
Alexander De Los Reyes ◽  
Vladimir Sarmiento ◽  
John Paul Ferrolino ◽  
Victor DC Andres Vistro ◽  
...  
Keyword(s):  
Gallium Arsenide ◽  
Silicon Nanowire ◽  
Terahertz Emission ◽  
Photoconductive Antennas ◽  
Emission Enhancement

scholarly journals Silicon Field Effect Transistor as the Nonlinear Detector for Terahertz Autocorellators

Sensors ◽  
2018 ◽  
Vol 18 (11) ◽  
pp. 3735 ◽  
Author(s):  
Kęstutis Ikamas ◽  
Ignas Nevinskas ◽  
Arūnas Krotkus ◽  
Alvydas Lisauskas
Keyword(s):  
Threshold Voltage ◽  
Field Effect ◽  
Field Effect Transistor ◽  
Cryogenic Cooling ◽  
Thz Radiation ◽  
Gate Bias ◽  
Large Signal ◽  
Wide Range ◽  
Effect Transistor ◽  
Thz Power

We demonstrate that the rectifying field effect transistor, biased to the subthreshold regime, in a large signal regime exhibits a super-linear response to the incident terahertz (THz) power. This phenomenon can be exploited in a variety of experiments which exploit a nonlinear response, such as nonlinear autocorrelation measurements, for direct assessment of intrinsic response time using a pump-probe configuration or for indirect calibration of the oscillating voltage amplitude, which is delivered to the device. For these purposes, we employ a broadband bow-tie antenna coupled Si CMOS field-effect-transistor-based THz detector (TeraFET) in a nonlinear autocorrelation experiment performed with picoseconds-scale pulsed THz radiation. We have found that, in a wide range of gate bias (above the threshold voltage V th = 445 mV), the detected signal follows linearly to the emitted THz power. For gate bias below the threshold voltage (at 350 mV and below), the detected signal increases in a super-linear manner. A combination of these response regimes allows for performing nonlinear autocorrelation measurements with a single device and avoiding cryogenic cooling.

Sign in / Sign up

Export Citation Format

Share Document