Design and optimization of a waveguide/fibre coupler in the visible range

Author(s):  
Paulo Lourenco ◽  
Alessandro Fantoni ◽  
João Costa ◽  
Miguel Fernandes ◽  
Manuela Vieira
1973 ◽  
Vol 2 (5) ◽  
pp. 445-449 ◽  
Author(s):  
Valentin G Dmitriev ◽  
R A Eremeeva ◽  
A G Ershov ◽  
I Ya Itskhoki ◽  
E P Karpova

Author(s):  
F. A. Ponce ◽  
R. L. Thornton ◽  
G. B. Anderson

The InGaAlP quaternary system allows the production of semiconductor lasers emitting light in the visible range of the spectrum. Recent advances in the visible semiconductor diode laser art have established the viability of diode structures with emission wavelengths comparable to the He-Ne gas laser. There has been much interest in the growth of wide bandgap quaternary thin films on GaAs, a substrate most commonly used in optoelectronic applications. There is particular interest in compositions which are lattice matched to GaAs, thus avoiding misfit dislocations which can be detrimental to the lifetime of these materials. As observed in Figure 1, the (AlxGa1-x)0.5In0.5P system has a very close lattice match to GaAs and is favored for these applications.In this work, we have studied the effect of silicon diffusion in GaAs/InGaAlP structures. Silicon diffusion in III-V semiconductor alloys has been found to have an disordering effect which is associated with removal of fine structures introduced during growth. Due to the variety of species available for interdiffusion, the disordering effect of silicon can have severe consequences on the lattice match at GaAs/InGaAlP interfaces.


Author(s):  
Taddese Mekonnen Ambay ◽  
Philipp Schick ◽  
Michael Grimm ◽  
Maximilian Sager ◽  
Felix Schneider ◽  
...  

2003 ◽  
Vol 775 ◽  
Author(s):  
Suk-Ho Choi ◽  
Jun Sung Bae ◽  
Kyung Jung Kim ◽  
Dae Won Moon

AbstractSi/SiO2 multilayers (MLs) have been prepared under different deposition temperatures (TS) by ion beam sputtering. The annealing at 1200°C leads to the formation of Si nanocrystals in the Si layer of MLs. The high resolution transmission electron microscopy images clearly demonstrate the existence of Si nanocrystals, which exhibit photoluminescence (PL) in the visible range when TS is ≥ 300°C. This is attributed to well-separation of nanocrystals in the higher-TS samples, which is thought to be a major cause for reducing non-radiative recombination in the interface between Si nanocrystal and surface oxide. The visible PL spectra are enhanced in its intensity and are shifted to higher energy by increasing TS. These PL behaviours are consistent with the quantum confinement effect of Si nanocrystals.


2018 ◽  
Vol 1 (3) ◽  
pp. 282-296
Author(s):  
V. N. Garmash ◽  
◽  
D. M. Korobochkin ◽  
S. A. Matveev ◽  
Y. V. Petrov ◽  
...  

2018 ◽  
Vol 13 (2) ◽  
pp. 107
Author(s):  
Flur Ismagilov ◽  
Vajcheslav Vavilov ◽  
Oksana Yushkova ◽  
Vladimir Bekuzin ◽  
Alexey Veselov

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