A 2D electrothermal micromirror with feedback based on Hall-effect of Piezoresistive sensors

2021 ◽  
Author(s):  
Yue Tang ◽  
Jian Hua Li ◽  
Li Xin Xu ◽  
Huikai Xie
Keyword(s):  
Hall Effect ◽  
Piezoresistive Sensors

Ambulatory Activity Monitoring

2009 ◽  
Vol 14 (2) ◽  
pp. 142-152 ◽  
Author(s):  
Johannes B.J. Bussmann ◽  
Ulrich W. Ebner-Priemer ◽  
Jochen Fahrenberg
Keyword(s):  
Physical Activity ◽  
Activity Monitoring ◽  
Main Stream ◽  
Computer Algorithms ◽  
Ambulatory Activity ◽  
Physiological Variables ◽  
Piezoresistive Sensors ◽  
Self Reports ◽  
Recent Developments ◽  
Objectively Measured

Behavior is central to psychology in almost any definition. Although observable activity is a core aspect of behavior, assessment strategies have tended to focus on emotional, cognitive, or physiological responses. When physical activity is assessed, it is done so mostly with questionnaires. Converging evidence of only a moderate association between self-reports of physical activity and objectively measured physical activity does raise questions about the validity of these self-reports. Ambulatory activity monitoring, defined as the measurement strategy to assess physical activity, posture, and movement patterns continuously in everyday life, has made major advances over the last decade and has considerable potential for further application in the assessment of observable activity, a core aspect of behavior. With new piezoresistive sensors and advanced computer algorithms, the objective measurement of physical activity, posture, and movement is much more easily achieved and measurement precision has improved tremendously. With this overview, we introduce to the reader some recent developments in ambulatory activity monitoring. We will elucidate the discrepancies between objective and subjective reports of activity, outline recent methodological developments, and offer the reader a framework for developing insight into the state of the art in ambulatory activity-monitoring technology, discuss methodological aspects of time-based design and psychometric properties, and demonstrate recent applications. Although not yet main stream, ambulatory activity monitoring – especially in combination with the simultaneous assessment of emotions, mood, or physiological variables – provides a comprehensive methodology for psychology because of its suitability for explaining behavior in context.

HALL EFFECT IN SILVER - RARE EARTH AMORPHOUS ALLOYS

1980 ◽  
Vol 41 (C8) ◽  
pp. C8-467-C8-469 ◽  
Author(s):  
R. Asomoza ◽  
J. B. Bieri ◽  
A. Fert ◽  
B. Boucher ◽  
J. C. Ousset
Keyword(s):  
Rare Earth ◽  
Hall Effect ◽  
Amorphous Alloys

The Hall effect and its analogs

2015 ◽  
Vol 185 (5) ◽  
pp. 479-488 ◽  
Author(s):  
Aleksandr F. Barabanov ◽  
Yurii M. Kagan ◽  
Leonid A. Maksimov ◽  
Andrey V. Mikheyenkov ◽  
Tatyana V. Khabarova
Keyword(s):  
Hall Effect

Position and Speed Estimation Methods of SPMSMs using a Hall Effect Sensor

2008 ◽  
Vol 128 (2) ◽  
pp. 125-130
Author(s):  
Kan Akatsu ◽  
Nobuhiro Mitomo ◽  
Shinji Wakui
Keyword(s):  
Hall Effect ◽  
Estimation Methods ◽  
Speed Estimation ◽  
Hall Effect Sensor

Effect of Cu doping on the electrical Properties of ZnTe by Vacuum Thermal Evaporation

2018 ◽  
Vol 31 (3) ◽  
pp. 20
Author(s):  
Sarmad M. M. Ali ◽  
Alia A.A. Shehab ◽  
Samir A. Maki
Keyword(s):  
Activation Energy ◽  
Electrical Conductivity ◽  
Hall Effect ◽  
Carrier Concentration ◽  
Hall Mobility ◽  
Cu Doping ◽  
Before And After ◽  
Hall Effect Measurements ◽  
Evaporation Technique ◽  
P Type

In this study, the ZnTe thin films were deposited on a glass substrate at a thickness of 400nm using vacuum evaporation technique (2×10-5mbar) at RT. Electrical conductivity and Hall effect measurements have been investigated as a function of variation of the doping ratios (3,5,7%) of the Cu element on the thin ZnTe films. The temperature range of (25-200°C) is to record the electrical conductivity values. The results of the films have two types of transport mechanisms of free carriers with two values of activation energy (Ea1, Ea2), expect 3% Cu. The activation energy (Ea1) increased from 29meV to 157meV before and after doping (Cu at 5%) respectively. The results of Hall effect measurements of ZnTe , ZnTe:Cu films show that all films were (p-type), the carrier concentration (1.1×1020 m-3) , Hall mobility (0.464m2/V.s) for pure ZnTe film, increases the carrier concentration (6.3×1021m-3) Hall mobility (2m2/V.s) for doping (Cu at 3%) film, but  decreases by increasing Cu concentration.

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