A new way to make high performance and low dark current Hg1-xCdxTe infrared focal plane arrays

2020 ◽  
Author(s):  
Shiguang LIU ◽  
Meng LI ◽  
Yi ZHANG ◽  
Yanlei XING ◽  
Zhen TAN
Keyword(s):  
Dark Current ◽  
Focal Plane ◽  
High Performance ◽  
Focal Plane Arrays ◽  
Infrared Focal Plane Arrays

Advanced III/V quantum-structure devices for high performance infrared focal plane arrays

2009 ◽  
Author(s):  
Robert Rehm ◽  
Martin Walther ◽  
Johannes Schmitz ◽  
Frank Rutz ◽  
Joachim Fleissner ◽  
...  
Keyword(s):  
Focal Plane ◽  
High Performance ◽  
Focal Plane Arrays ◽  
Quantum Structure ◽  
Infrared Focal Plane Arrays

The development of InGaAs short wavelength infrared focal plane arrays with high performance

2017 ◽  
Vol 80 ◽  
pp. 112-119 ◽  
Author(s):  
Xue Li ◽  
Haimei Gong ◽  
Jiaxiong Fang ◽  
Xiumei shao ◽  
Hengjing Tang ◽  
...  
Keyword(s):  
Focal Plane ◽  
Short Wavelength ◽  
High Performance ◽  
Focal Plane Arrays ◽  
Infrared Focal Plane Arrays

Deposition and Characterization of Pyroelectric PMN-PT Thin Films for Uncooled Infrared Focal Plane Arrays

2011 ◽  
Vol 687 ◽  
pp. 242-246
Author(s):  
Yan Xue Tang ◽  
Yue Tian ◽  
Fei Fei Wang ◽  
Wang Zhou Shi
Keyword(s):  
Thin Films ◽  
Focal Plane ◽  
High Performance ◽  
Pyroelectric Coefficient ◽  
Focal Plane Arrays ◽  
Infrared Focal Plane Arrays ◽  
Si Substrates ◽  
Low Dielectric ◽  
Device Applications ◽  
Electric Filed

Modern uncooled infrared focal plane arrays (UFPA) development is oriented toward silicon microstructure monolithic arrays by employing pyroelectric thin films with continuing trends in high performance and miniaturization. In order to exploit high performance pyroelectric thin films, (1−x)Pb(Mg1/3Nb2/3)O3−xPbTiO3(PMN-PT) thin films withx= 0.26 were deposited on LaNiO3/Si substrates by the radio-frequency magnetron sputtering technique. (110) preferred orientation thin films with pure perovskite structures were obtained at a substrate temperature of 500°C. The ferroelectric, dielectric and pyroelectric properties of the films were investigated. The films show a typical polarization – electric filed hysteresis loop with a large remnant polarization of 17.2 μC/cm2. At room temperature, the high pyroelectric coefficient of 3.1 × 10-4C/m2K together with low dielectric constant of 470 and loss tangent of 0.04 render the film promising for uncooled infrared device applications. The origin of the differences in electrical properties between the films and bulk materials has also been discussed.

Sign in / Sign up

Export Citation Format

Share Document