Development of a new indium bump fabrication method for large-area HgCdTe detector

2020 ◽  
Author(s):  
Yi Zhang ◽  
Junfeng Niu ◽  
Peng Zhang ◽  
Zhen Tan
Keyword(s):  
Fabrication Method ◽  
Large Area ◽  
Indium Bump ◽  
Hgcdte Detector

Fabrication of large area nanogap electrodes for sensing applications

2013 ◽  
Vol 1530 ◽  
Author(s):  
A. Bendavid ◽  
L. Wieczorek ◽  
R. Chai ◽  
J. S. Cooper ◽  
B. Raguse
Keyword(s):  
Large Scale ◽  
Focused Ion Beam ◽  
Ion Beam ◽  
Beam Current ◽  
Fabrication Method ◽  
Large Area ◽  
Sensor Applications ◽  
Sensing Applications ◽  
Lift Off ◽  
Nanogap Electrodes

ABSTRACTA large area nanogap electrode fabrication method combinig conventional lithography patterning with the of focused ion beam (FIB) is presented. Lithography and a lift-off process were used to pattern 50 nm thick platinum pads having an area of 300 μm × 300 μm. A range of 30-300 nm wide nanogaps (length from 300 μm to 10 mm ) were then etched using an FIB of Ga+ at an acceleration voltage of 30 kV at various beam currents. An investigation of Ga+ beam current ranging between 1-50 pA was undertaken to optimise the process for the current fabrication method. In this study, we used Monte Carlo simulation to calculate the damage depth in various materials by the Ga+. Calculation of the recoil cascades of the substrate atoms are also presented. The nanogap electrodes fabricated in this study were found to have empty gap resistances exceeding several hundred MΩ. A comparison of the gap length versus electrical resistance on glass substrates is presented. The results thus outline some important issues in low-conductance measurements. The proposed nanogap fabrication method can be extended to various sensor applications, such as chemical sensing, that employ the nanogap platform. This method may be used as a prototype technique for large-scale fabrication due to its simple, fast and reliable features.

scholarly journals Highly-robust, solution-processed flexible transparent electrodes with a junction-free electrospun nanofiber network

RSC Advances ◽  
2020 ◽  
Vol 10 (17) ◽  
pp. 9940-9948
Author(s):  
Geon Hwee Kim ◽  
Hyeonsu Woo ◽  
Suhyeon Kim ◽  
Taechang An ◽  
Geunbae Lim
Keyword(s):  
Contact Resistance ◽  
Electroless Deposition ◽  
Transparent Electrode ◽  
Fabrication Method ◽  
Transparent Electrodes ◽  
Electrospun Nanofiber ◽  
Large Area ◽  
Solution Processed ◽  
Robust Solution ◽  
Flexible Transparent Electrodes

The flexible transparent electrode of this study used electrospinning and electroless deposition, which is a fabrication method to remove contact resistance at the nanofiber intersection and fabricate large-area electrode.

Realization of Three-Dimensional Nanostructure Fabrication by Nanoimprint on Silicon Substrate

2011 ◽  
Vol 211-212 ◽  
pp. 1105-1109
Author(s):  
Xi Qiu Fan
Keyword(s):  
Silicon Substrate ◽  
Low Cost ◽  
Three Dimensional ◽  
Microlens Array ◽  
Optical Lithography ◽  
High Fidelity ◽  
Fabrication Method ◽  
Nanostructure Fabrication ◽  
Large Area ◽  
3D Nanostructures

Traditional optical lithography techniques to fabricate three-dimensional (3D) nanostructures are complicated and time consuming. Due to the capability to replicate nanostructures repeatedly in a large area with high resolution and uniformity, nanoimprint (NI) has been recognized as one of the promising approaches to fabricate 3-D nanostructures with high throughput and low cost. This paper introduces a novel 3-D nanostructure fabrication method by nanoimprint on silicon substrate. Nanoscale gratings and microlens array are taken as examples of 3-D nanostructures fabricated by nanoimprint. High fidelity demonstrates the possibility of nanoimprint to fabricate 3-D nanostructures on silicon substrate.

Recent advances in heteroepitaxial Ge/Si(100) and Ge/Si(l 11)

1994 ◽  
Vol 52 ◽  
pp. 838-839
Author(s):  
J. B. Posthill ◽  
D. P. Malta ◽  
R. Pickett ◽  
M. L. Timmons ◽  
T. P. Humphreys ◽  
...  
Keyword(s):  
Focal Plane ◽  
High Mobility ◽  
Epitaxial Films ◽  
Focal Plane Arrays ◽  
Si Substrate ◽  
Large Area ◽  
Lattice Match ◽  
Temperature Growth ◽  
X Ray ◽  
Indium Bump

Heteroepitaxial Ge-on-Si could have many applications which include: high mobility p-channel fieldeffect transistors (FETs), large area Ge-based IR or X-ray detectors, or as a substrate for the growth of other epitaxial semiconductors. In particular, the close lattice match between Ge and GaAs and Ge and ZnSe offers a potential for Ge to be used as an interlayer for a GaAs/Si or ZnSe/Si technology.Additionally, with the Si substrate as the "foundation" for further epitaxial semiconductors, thereisa built-in thermal match for any device that must be intimately bonded to Si-based circuitry. Thisis particularly critical in the case of HgCdTe IR focal plane arrays that are indium bump-bonded to aSi multiplexer which will experience thermal cycling in use. This contribution briefly reviews some ofour recent results in the high temperature growth of Ge epitaxial films on Si(100) and Si(l 11) substrates which are being developed for use as a template for HgCdTe/CdZnTe growth.

scholarly journals Biologically-Inspired Water-Swelling-Driven Fabrication of Centimeter-Level Metallic Nanogaps

Micromachines ◽  
2021 ◽  
Vol 12 (7) ◽  
pp. 735
Author(s):  
Lei Wang ◽  
Yanping Wang ◽  
Meiqin Dai ◽  
Qiuling Zhao ◽  
Xia Wang
Keyword(s):  
Raman Scattering ◽  
Low Cost ◽  
Fabrication Method ◽  
Large Area ◽  
Biologically Inspired ◽  
Super Absorbent Polymer ◽  
Cracking Behavior ◽  
Water Swelling ◽  
Absorbent Polymer ◽  
Scattering Signal

Metallic nanogaps have great values in plasmonics devices. However, large-area and low-cost fabrication of such nanogaps is still a huge obstacle, hindering their practical use. In this work, inspired by the cracking behavior of the tomato skin, a water-swelling-driven fabrication method is developed. An Au thinfilm is deposited on a super absorbent polymer (SAP) layer. Once the SAP layer absorbs water and swells, gaps will be created on the surface of the Au thinfilm at a centimeter-scale. Further experimentation indicates that such Au gaps can enhance the Raman scattering signal. In principle, the water-swelling-driven fabrication route can also create gaps on other metallic film and even nonmetallic film in a low-cost way.

A bottom-up fabrication method for the production of visible light active photonic crystals

2014 ◽  
Vol 2 (9) ◽  
pp. 1675-1682 ◽  
Author(s):  
Sibu C. Padmanabhan ◽  
Keith Linehan ◽  
Shane O'Brien ◽  
Syara Kassim ◽  
Hugh Doyle ◽  
...  
Keyword(s):  
Photonic Crystals ◽  
Visible Light ◽  
Chemical Etching ◽  
Silicon Nanocrystals ◽  
Fabrication Method ◽  
Large Area ◽  
Inverse Opals ◽  
Polymer Templating ◽  
Simple Chemical ◽  
Visible Light Active

A sacrificial polymer templating, simple chemical etching and AACVD is described for the fabrication of robust, large area 3D inverse opals patterned with silicon nanocrystals.

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