Ultrafast dynamic control of hidden metastable phase in colossal magnetoresistance manganite thin film

Author(s):  
Jingdi Zhang
1997 ◽  
Vol 70 (21) ◽  
pp. 2909-2911 ◽  
Author(s):  
M. Sahana ◽  
R. N. Singh ◽  
C. Shivakumara ◽  
N. Y. Vasanthacharya ◽  
M. S. Hegde ◽  
...  

2013 ◽  
Vol 5 (2) ◽  
pp. 2200707-2200707 ◽  
Author(s):  
L. E. Aygun ◽  
F. B. Oruc ◽  
F. B. Atar ◽  
A. K. Okyay

MRS Bulletin ◽  
1990 ◽  
Vol 15 (2) ◽  
pp. 19-28 ◽  
Author(s):  
Bruce M. Clemens ◽  
Robert Sinclair

It is well known that thin-film technology relies increasingly on multilayered structures. As dimensions become smaller, the interfacial or contact region assumes a larger and often dominant role in the performance or properties. Many examples come readily to mind. In magnetic hard disks, the active cobaltalloy layer, itself only about 50 nm thick, is grown either on a crystalline chromium thin film or directly onto amorphous nickel-phosphorous, and capped with a protective carbon or chromium-carbon coating (see Figure 1). The recording head “flies” at 90 mph and about 0.1 ü above this combination, which is expected to be mechanically durable and magnetically reliable for thousands of recordings. Atomic-scale multilayers are being investigated to provide the ability to “tune” the magnetic properties of the active recording layer or head materials. Exchange coupled magneto-optical media consisting of a few tens of angstroms of cobalt or nickel layers on amorphous TbFeCo alloys are showing promise for improving magneto-optical coupling while maintaining perpendicular anisotropy. In microelectronic circuits, aluminum or silicide contacts to silicon are essential to any device, and multilevel integration involving a series of metal, alloy, silicon (amorphous, poly- or monocrystalline) and dielectric layers (some of which might be 1-10 nm thick) are increasingly required to achieve large-scale integration. Metal-metalloid (e.g., MoSi, W-C) multilayers are used for x-ray optical elements. Artificially produced metallic superlattices and multilayers are being used to probe the fundamental magnetic, electronic, mechanical, and structural properties of metal-metal interfaces.


1986 ◽  
Vol 74 ◽  
Author(s):  
David A. Lilienfeld ◽  
J. W. Mayer

AbstractThe Al-Zr system was investigated in an effort to form quasicrystals. While no quasicrystals were found, a metastable phase previously formed only by annealing of a metastable solid solution was observed. This phase was formed by thermal annealing or by elevated temperature ion irradiations of thin film specimens. This work is the first observation of ion irradiation induced formation of this metastable phase.


2014 ◽  
Vol 13 (10) ◽  
pp. 920-921 ◽  
Author(s):  
Ognjen Ilic ◽  
Marin Soljačić

2012 ◽  
Vol 476-478 ◽  
pp. 2374-2378
Author(s):  
Hui Ling Jia ◽  
Zhao Xi Li ◽  
Xue Jie Liu

In this paper, the method for plane wave ultrasoft pseudopotentials of first-principles is adopted to calculate electronic structures of three models including VN crystal, the absence of V atoms and the replacement of V atoms by Si atoms by the VASP software package. On the basis of the optimized VN’s lattice constant, the energy band structures and density of states(DOS) curves of those three models are analyzed. The results show that the 3d electrons of V atoms determine that VN crystal is a conductor. The crystal lack of V atoms forms a peak caused by the empty position near the Fermi level. Its valence band energy level splits and the ability to form bonds reduces to be a metastable phase structure. The formation of solid solution interface due to Si atoms replacing V atoms leads to the peak value of total DOS to decrease, the distribution of electrons to be more diffuse and the ability to form bonds to strengthen.


2015 ◽  
Author(s):  
Fang-Fang Ren ◽  
Wei-Zong Xu ◽  
Hai Lu ◽  
Jiandong Ye ◽  
Hark Hoe Tan ◽  
...  

2011 ◽  
Vol 287-290 ◽  
pp. 2248-2251
Author(s):  
Qian Qian Hua ◽  
Li Sheng Zhang ◽  
Pei Jie Wang

The laser-induced thermoelectric voltage was observed for the first time in praseodymium doped LaMnO3 thin film grown on LaAlO3 single crystal vicinal cut substrates by pulsed laser deposition. The experimental data for La0.5Pr0.5MnO3 showed a good liner relation between the voltage and the laser energy. The result suggested that the anisotropic Seebeck effect were responsible for the voltage signals in colossal magnetoresistance manganites thin film.


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