Analytical analysis of piezoelectric field on the optoelectronic characteristics of green GaN-based light-emitting diodes

2020 ◽  
Author(s):  
Abdur-Rehman Anwar ◽  
Muhammad Usman ◽  
Munaza Munsif ◽  
Shahzeb Malik ◽  
Noor Ul Islam
Keyword(s):  
Light Emitting Diodes ◽  
Analytical Analysis ◽  
Light Emitting ◽  
Piezoelectric Field

Stress-induced piezoelectric field in GaN-based 450-nm light-emitting diodes

2014 ◽  
Vol 116 (16) ◽  
pp. 164503 ◽  
Author(s):  
Wael Z. Tawfik ◽  
Gil Yong Hyeon ◽  
June Key Lee
Keyword(s):  
Light Emitting Diodes ◽  
Light Emitting ◽  
Piezoelectric Field

Effect of an electron blocking layer on the piezoelectric field in InGaN/GaN multiple quantum well light-emitting diodes

2012 ◽  
Vol 100 (4) ◽  
pp. 041119 ◽  
Author(s):  
Dong-Yul Lee ◽  
Sang-Heon Han ◽  
Dong-Ju Lee ◽  
Jeong Wook Lee ◽  
Dong-Joon Kim ◽  
...  
Keyword(s):  
Quantum Well ◽  
Light Emitting Diodes ◽  
Multiple Quantum Well ◽  
Multiple Quantum ◽  
Blocking Layer ◽  
Electron Blocking Layer ◽  
Light Emitting ◽  
Piezoelectric Field

The Influence of a Piezoelectric Field on the Dynamic Performance of GaN-Based Green Light-Emitting Diodes With an InGaN Insertion Layer

2011 ◽  
Vol 32 (5) ◽  
pp. 656-658 ◽  
Author(s):  
Jin-Wei Shi ◽  
F.-M Kuo ◽  
H.-W Huang ◽  
Jinn-Kong Sheu ◽  
Chih-Ciao Yang ◽  
...  
Keyword(s):  
Light Emitting Diodes ◽  
Dynamic Performance ◽  
Green Light ◽  
Light Emitting ◽  
Piezoelectric Field

scholarly journals Enhancement of efficiency of InGaN-based light emitting diodes through strain and piezoelectric field management

2013 ◽  
Vol 114 (7) ◽  
pp. 073104 ◽  
Author(s):  
J. Pal ◽  
M. A. Migliorato ◽  
C.-K. Li ◽  
Y.-R. Wu ◽  
B. G. Crutchley ◽  
...  
Keyword(s):  
Light Emitting Diodes ◽  
Light Emitting ◽  
Field Management ◽  
Piezoelectric Field

Analytical analysis of internal quantum efficiency with polarization fields in GaN-based light-emitting diodes

2019 ◽  
Vol 135 ◽  
pp. 106271 ◽  
Author(s):  
Muhammad Usman ◽  
Abdur-Rehman Anwar ◽  
Munaza Munsif ◽  
Shahzeb Malik ◽  
Noor Ul Islam
Keyword(s):  
Quantum Efficiency ◽  
Light Emitting Diodes ◽  
Internal Quantum Efficiency ◽  
Analytical Analysis ◽  
Light Emitting

scholarly journals Study of the spectral and power characteristics of In0.2Ga0.8N/GaN superluminescent light emitting diodes by taking into account the piezoelectric polarization fields

2021 ◽  
Author(s):  
Hassan Absalan ◽  
Mir Maqsood Golzan ◽  
Nasser Moslehi Milani
Keyword(s):  
Light Emitting Diodes ◽  
Multiple Quantum Well ◽  
Rate Equations ◽  
Multiple Quantum ◽  
Modal Gain ◽  
Light Emitting ◽  
Piezoelectric Polarization ◽  
Power Characteristics ◽  
Poisson Equations ◽  
Piezoelectric Field

Abstract In this study, the effects of the piezoelectric polarization field have been investigated on the spectral and power characteristics of In0.2Ga0.8N/GaN superluminescent light emitting diodes. The Schrödinger and Poisson equations, the rate equations in the multiple quantum well active region and separate confinement heterostructure layers, and the optical propagating equations have been solved in the presence of the piezoelectric field. The results have been compared with results of the case of without piezoelectric field. According to the results, in the presence of piezoelectric field, the red-shift occurs in the spectra, and the width of spectrum increases. Also, the piezoelectric field decreases the peak intensity of spectrum and modal gain of the device.

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