Can photonic-CMOS quantum cascade lasers with built-in nonlinear optics replace multiple quantum well diode-based QCLs? Analysis of performance advantages and future outlook

Author(s):  
James N. Pan
Laser Physics ◽  
2007 ◽  
Vol 17 (5) ◽  
pp. 672-679 ◽  
Author(s):  
F. Xie ◽  
V. R. Chaganti ◽  
D. Smith ◽  
A. Belyanin ◽  
F. Capasso ◽  
...  

2021 ◽  
Vol 11 (1) ◽  
Author(s):  
Li Wang ◽  
Tsung-Tse Lin ◽  
Mingxi Chen ◽  
Ke Wang ◽  
Hideki Hirayama

AbstractThe key challenge for terahertz quantum cascade lasers (THz-QCLs) is to make it operating at room-temperature. The suppression of thermally activated leakages via high lying quantum levels is emphasized recently. In this study, we employ the advanced self-consistent method of non-equilibrium Green’s function, aiming to reveal those kinds of leakages in the commonly used THz-QCL designs based on 2-, 3- and 4-quantum well. At the high temperature of 300 K, if all the confined high lying quantum levels and also the continuums are included within three neighboring periods, leakages indeed possess high fraction of the total current (21%, 30%, 50% for 2-, 3- and 4-quantum well designs, respectively). Ministep concept is introduced to weaken those leakage channels by isolating the desired levels from high lying ones, thus the leakages are well suppressed, with corresponding fractions less than 5% for all three designs.


2009 ◽  
Vol 1195 ◽  
Author(s):  
Michele Nobile ◽  
Gottfried Strasser ◽  
Hermann Detz ◽  
Elvis Mujagic ◽  
Aaron Andrews ◽  
...  

AbstractAn experimental study on mid-infrared intersubband absorption in InGaAs/GaAsSb multiple quantum wells grown lattice-matched to InP substrates by molecular beam epitaxy is presented. Intersubband absorption in a broad wavelength region (5.8 - 11.6 μm) is observed in multiple quantum well samples with well widths ranging between 4.5 and 12 nm. A conduction band offset at the InGaAs/GaAsSb heterointerface of 360 meV gives an excellent agreement between the theoretically calculated ISB transition energies and the Fourier-transform infrared spectroscopy measurements over the whole range of well widths under investigation. Two kinds of intersubband devices based on the InGaAs/GaAsSb material system are presented: a quantum well infrared photodetector operating at a wavelength of 5.6μm and an aluminum-free quantum cascade laser. The presented quantum cascade laser emits at a wavelength of 11.3 μm, with a threshold current density of 1.7 kA/cm2 at 78 K.


2020 ◽  
Vol 29 (8) ◽  
pp. 084212
Author(s):  
Zhi-Yong Tan ◽  
Wen-Jian Wan ◽  
Jun-Cheng Cao

2014 ◽  
Vol 85 (1) ◽  
pp. 014704 ◽  
Author(s):  
Matthew S. Taubman ◽  
Tanya L. Myers ◽  
Richard M. Pratt ◽  
Robert D. Stahl ◽  
Bret D. Cannon

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