Analysis of temperature distribution and slip in rapid thermal processing

1991 ◽  
Author(s):  
Hyouk Lee ◽  
Young-Don Yoo ◽  
Hyun-Dong Shin ◽  
Youn Y. Earmme ◽  
Choong-Ki Kim
Keyword(s):  
Temperature Distribution ◽  
Thermal Processing ◽  
Rapid Thermal Processing

Modelling of Temperature Distribution of Semiconductors During Rapid Thermal Processing

1994 ◽  
Vol 342 ◽  
Author(s):  
Andreas Tillmann
Keyword(s):  
Temperature Distribution ◽  
Material Property ◽  
Thermal Processing ◽  
Rapid Thermal Processing ◽  
Two Dimensional ◽  
Temperature Uniformity ◽  
Temperature Dependent ◽  
Incident Intensity ◽  
Circular Test ◽  
Contour Plots

ABSTRACTThe modelling of temperature distribution on semiconductor wafers in common RTP-equipment is described. The incident intensity distribution on the wafer is calculated using raytracing. Based on this distribution the temperature distribution on the wafer is determined solving the two-dimensional heat conduction equation. If the dependence of a considered material property on the process temperature is known, the calculated temperature distribution can be convened to a distribution of this parameter.The distinctive feature of the described algorithms is the two-dimensional treatment of the distributions using a grid of ring segments, each with equal area. This grid is identical to the usual circular test patterns of multipoint measurement equipment. This is convenient since the evaluation of temperature uniformity in RTP equipment is done mostly by mapping an appropriate temperature dependent material property. All calculated distributions can be presented by contour plots as well as 3-D plots. This results in a very suitable method to compare simulated and experimental wafer maps.The agreement between simulated and experimental temperature distributions is shown.

scholarly journals A Design Method to Improve Temperature Uniformity on Wafer for Rapid Thermal Processing

Electronics ◽  
2018 ◽  
Vol 7 (10) ◽  
pp. 213
Author(s):  
Peng Huang ◽  
Hongguan Yang
Keyword(s):  
Temperature Distribution ◽  
Thermal Processing ◽  
Design Method ◽  
Rapid Thermal Processing ◽  
Design Parameters ◽  
Temperature Uniformity ◽  
Uniform Temperature ◽  
Simple Method ◽  
Uniform Temperature Distribution ◽  
Proposed Model

Single-wafer rapid thermal processing (RTP) is widely used in semiconductor manufacturing. Achieving temperature uniformity on silicon wafer is a major challenge in RTP control. In this work, a lamp configuration including five concentric lamp zones is designed to obtain uniform temperature distribution on the wafer. An optics-based model is developed to determine the optimal lamp design parameters, and a uniformity criterion is proposed to evaluate the effective irradiance distribution of the tungsten–halogen lamps on the wafer. This method can be used to determine geometric parameters of the lamp array in order to achieve uniform temperature distribution on the wafer. A realistic simulation of a cold wall RTP system with five lamp rings and a 200-mm wafer is performed. The proposed model makes way for a simple method for determining the optimal lamp design parameters in RTP systems.

Improvement of Temperature Uniformity in Rapid Thermal Processing Systems Using Multivariable Control

1991 ◽  
Vol 224 ◽  
Author(s):  
S. A. Norman ◽  
C. D. Schaper ◽  
S. P. Boyd
Keyword(s):  
Steady State ◽  
Temperature Distribution ◽  
Thermal Processing ◽  
Numerical Technique ◽  
Rapid Thermal Processing ◽  
Temperature Uniformity ◽  
Wafer Temperature ◽  
Scalar Control ◽  
Steady State Temperature ◽  
Knob Control

AbstractDuring rapid thermal processing (RTP) of a semiconductor wafer, maintenance of nearuniform wafer temperature distribution is necessary. This paper addresses the problem of insuring temperature uniformity in a cylindrical RTP system with multiple concentric circular lamps.A numerical technique is presented for optimizing steady-state temperature distribution by independently varying the power radiated by each lamp. It is shown for a simulated system, over a wide range of temperature setpoints, that the temperature uniformity achievable with multivariable (“multiple knob”) control of lamp powers is significantly better than that achievable with scalar (“single knob”) control.The difficulties of using scalar control in RTP are more severe in the case of temperature trajectory design than in the case of steady-state temperature maintenance. For example, with scalar control the rate of temperature increase during ramping is limited because temperature nonuniformity can cause slip defects in the wafer. A numerical technique is presented for designing multivariable lamp power trajectories to obtain near-optimal temperature uniformity while wafer temperature tracks a specified ramp, resulting in slip-free ramp rates much faster than those achievable with scalar control.

Analysis of the Effect of Heating Control Conditions on Temperature Distribution in a Wafer During Rapid Thermal Processing With Lamp Heaters

2001 ◽  
Author(s):  
Shigeki Hirasawa ◽  
Tadashi Suzuki ◽  
Shigenao Maruyama ◽  
Yuhei Takeuchi
Keyword(s):  
Steady State ◽  
Temperature Distribution ◽  
Thermal Processing ◽  
Radiative Heat ◽  
Rapid Thermal Processing ◽  
Three Dimensional ◽  
Heating Process ◽  
Computation Technique ◽  
Shielding Ring ◽  
Optimum Heating

Abstract To unify temperature distribution in a wafer during rapid thermal processing, we calculated the effect of the heating control conditions on temperature distributions in the wafer during heat-up and at steady state by using a program for analyzing three-dimensional radiative heat transfer. We calculated optimum monitoring positions on the wafer in order to minimize the temperature distribution in the wafer. The effects of rotating the wafer, the spacing between the wafer and the shielding ring, the number of monitoring positions, and the initial non-uniform temperature distribution were also calculated. The minimum steady temperature distribution in the wafer at the optimum condition was calculated as ±0.1 K during 100 K/s heat-up and ±0.02 K at 1273 K steady state. We also developed a rapid parallel-computation technique to find the optimum heating control conditions for the whole heating process.

Point Defect Reaction in Silicon Wafers by Rapid Thermal Processing at More Than 1300°C Using an Oxidation Ambient

2019 ◽  
Vol 8 (1) ◽  
pp. P35-P40 ◽  
Author(s):  
Haruo Sudo ◽  
Kozo Nakamura ◽  
Susumu Maeda ◽  
Hideyuki Okamura ◽  
Koji Izunome ◽  
...  
Keyword(s):  
Point Defect ◽  
Thermal Processing ◽  
Rapid Thermal Processing ◽  
Silicon Wafers ◽  
Defect Reaction
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