Quantitative electrochemical control over optical gain in colloidal quantum-dot and quantum-well solids

Author(s):  
Jaco Geuchies ◽  
Baldur Brynjarsson ◽  
Gianluca Grimaldi ◽  
Indy Du Fossé ◽  
Robbert Dijkhuizen ◽  
...  
2014 ◽  
Vol 5 (13) ◽  
pp. 2214-2218 ◽  
Author(s):  
Burak Guzelturk ◽  
Yusuf Kelestemur ◽  
Mehmet Zafer Akgul ◽  
Vijay Kumar Sharma ◽  
Hilmi Volkan Demir

Nanomaterials ◽  
2020 ◽  
Vol 10 (6) ◽  
pp. 1226
Author(s):  
Dongxiang Luo ◽  
Lin Wang ◽  
Ying Qiu ◽  
Runda Huang ◽  
Baiquan Liu

In recent years, impurity-doped nanocrystal light-emitting diodes (LEDs) have aroused both academic and industrial interest since they are highly promising to satisfy the increasing demand of display, lighting, and signaling technologies. Compared with undoped counterparts, impurity-doped nanocrystal LEDs have been demonstrated to possess many extraordinary characteristics including enhanced efficiency, increased luminance, reduced voltage, and prolonged stability. In this review, recent state-of-the-art concepts to achieve high-performance impurity-doped nanocrystal LEDs are summarized. Firstly, the fundamental concepts of impurity-doped nanocrystal LEDs are presented. Then, the strategies to enhance the performance of impurity-doped nanocrystal LEDs via both material design and device engineering are introduced. In particular, the emergence of three types of impurity-doped nanocrystal LEDs is comprehensively highlighted, namely impurity-doped colloidal quantum dot LEDs, impurity-doped perovskite LEDs, and impurity-doped colloidal quantum well LEDs. At last, the challenges and the opportunities to further improve the performance of impurity-doped nanocrystal LEDs are described.


ACS Nano ◽  
2020 ◽  
Author(s):  
Jaco J. Geuchies ◽  
Baldur Brynjarsson ◽  
Gianluca Grimaldi ◽  
Solrun Gudjonsdottir ◽  
Ward van der Stam ◽  
...  

Author(s):  
Cuong Dang ◽  
Kwangdong Roh ◽  
Joonhee Lee ◽  
Craig Breen ◽  
Jonathan S. Steckel ◽  
...  

1997 ◽  
Vol 482 ◽  
Author(s):  
Takeshi Uenoyama

AbstractWe have evaluated the optical gain of GaN/AlGaN quantum well structures with localized states, taking into account the Coulomb interaction. The localized states axe introduced in the well as quantum dot-like subband states. We have used the temperature Green's function formalism to treat the many-body effects and have found a new excitonic enhancement of the optical gain involved the localized states. This enhancement is stronger than the conventional Coulomb enhancement. It might play an important role to reduce the threshold carrier density.


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