Performance analysis of thin film CIGS solar cell at different values of thickness, bandgap and temperature through numerical simulation

2020 ◽  
Author(s):  
Abhinav Bhatnagar ◽  
Anoopshi Johari ◽  
Vijay Janyani
Keyword(s):  
Thin Film ◽  
Numerical Simulation ◽  
Solar Cell ◽  
Performance Analysis ◽  
Cigs Solar Cell

Optimization of Cu(In,Ga)Se2 Solar Cell and its Comparative Performance Analysis for Employing Different Buffer and Window Layers Through Numerical Simulation and Analysis Using SCAPS-1D

2020 ◽  
Author(s):  
Meah Imtiaz Zulkarnain ◽  
Nazmul Islam
Keyword(s):  
Thin Film ◽  
Numerical Simulation ◽  
Solar Cell ◽  
Thin Film Solar Cell ◽  
Buffer Layers ◽  
Window Layer ◽  
Solar Cell Efficiency ◽  
Cell Efficiency ◽  
Cigs Solar Cell ◽  
Cell Structures

Abstract In this research, a numerical simulation and analysis of the second generation thin film solar cell Copper Indium Gallium diselenide, Cu(In,Ga)Se2 or, CIGS, is conducted in order to optimize its performance and compare among the cells using different materials for buffer and window layers. The one-dimensional solar cell simulation program SCAPS-1D (Solar Cell Capacitance Simulator) is used for the simulation and analysis purpose. The effects of variation of bandgap, concentration and thickness of the p-type CIGS absorber layer on the efficiency of CIGS solar cell are investigated. The change in CIGS solar cell efficiency with change in temperature is studied, too. Two different buffer layers namely CdS and In2S3 are considered for the simulation of the CIGS solar cell. The thickness of the buffer layer, its bandgap and concentration are taken into consideration for optimization. As for the window layer, ZnO and SnO2 are employed for the numerical simulation. The thickness of the window layer is varied and its effect on the efficiency of the solar cell is investigated. The open-circuit voltage, short-circuit current density, fill factor and quantum efficiency of the CIGS solar cell are observed from the SCAPS simulation besides the solar cell efficiency. A comparison among the different CIGS cell structures employing different buffer layers and window layers is performed in terms of efficiency and other essential parameters as mentioned above. The solar cell performances of the structures explored in this work were also put in comparison against some laboratory research cell output. The simulation result shows a possible better performance for all the simulated CIGS cell structures compared to the experimental results. In2S3 appears to increase efficiency and thus poses a great potential for non-toxic CIGS solar cell. Though CIGS absorber layer requires more thickness for desired output, successful application of much thinner SnO2 replacing ZnO buffer layer paves the way to less thicker CIGS thin film solar cell.

Comparative Study of Copper Indium Gallium Selenide (CIGS) Solar Cell With Other Solar Technologies

2021 ◽  
Author(s):  
Isabela C. B. ◽  
Ricardo Lameirinhas ◽  
Carlos A. F. Fernandes ◽  
João Paulo N. Torres
Keyword(s):  
Thin Film ◽  
Solar Cell ◽  
Comparative Study ◽  
Crystalline Silicon ◽  
Gallium Selenide ◽  
Copper Indium Gallium Selenide ◽  
Cigs Solar Cell ◽  
Copper Indium ◽  
Indium Gallium ◽  
Copper Indium Gallium

Thin-film modules are emerging in the photovoltaic market, due to their competitive cost with the traditional crystalline silicon modules. The thin-film cells CuIn(1-x)Ga(x)Se2 (Copper Indium Gallium Selenide - CIGS) are...

Materials Optimization for thin-film copper indium gallium selenide (CIGS) solar cell based on distributed braggs reflector

Optik ◽  
2020 ◽  
pp. 165987
Author(s):  
Waqas Farooq ◽  
Thamraa Alshahrani ◽  
Syed Asfandyar Ali Kazmi ◽  
Javed Iqbal ◽  
Hassnain Abbas Khan ◽  
...  
Keyword(s):  
Thin Film ◽  
Solar Cell ◽  
Gallium Selenide ◽  
Copper Indium Gallium Selenide ◽  
Cigs Solar Cell ◽  
Copper Indium ◽  
Indium Gallium ◽  
Copper Indium Gallium

Application of a Sn4+ doped In2S3 thin film in a CIGS solar cell as a buffer layer

2020 ◽  
Vol 4 (1) ◽  
pp. 362-368 ◽  
Author(s):  
SeongYeon Kim ◽  
Md. Salahuddin Mina ◽  
Kiwhan Kim ◽  
Jihye Gwak ◽  
JunHo Kim
Keyword(s):  
Thin Film ◽  
Solar Cells ◽  
Solar Cell ◽  
Buffer Layer ◽  
Cigs Solar Cell ◽  
In2s3 Thin Film ◽  
Cigs Solar Cells

As a Cd-free buffer, In2S3 buffer has been used in Cu(In,Ga)Se2 (CIGS) solar cells.

scholarly journals Modeling and performance analysis dataset of a CIGS solar cell with ZnS buffer layer

Data in Brief ◽  
2017 ◽  
Vol 14 ◽  
pp. 246-250 ◽  
Author(s):  
Md. Billal Hosen ◽  
Ali Newaz Bahar ◽  
Md. Karamot Ali ◽  
Md. Asaduzzaman,
Keyword(s):  
Solar Cell ◽  
Performance Analysis ◽  
Buffer Layer ◽  
Cigs Solar Cell ◽  
And Performance

A Highly Efficient Thin Film CuInGaSe2 Solar Cell

2015 ◽  
Vol 137 (6) ◽  
Author(s):  
M. Doriani ◽  
H. Dehdashti Jahromi ◽  
M. H. Sheikhi
Keyword(s):  
Thin Film ◽  
Solar Cell ◽  
Recombination Rate ◽  
Doping Level ◽  
Absorber Layer ◽  
Maximum Efficiency ◽  
Back Contact ◽  
Cigs Solar Cell ◽  
Drift Field ◽  
Graded Bandgap

A new structure for CuIn1−xGaxSe2 (CIGS) solar cell is investigated. The structure consists of an absorber layer with constant bandgap placed next to the cadmium sulfide (CdS) buffer layer and a graded bandgap absorber layer positioned near the molybdenum (Mo) back contact. This leads to a reduced recombination rate at the back contact and enhances collection of generated carriers by additional induced drift field. The structure provides higher efficiency than previous structures. Optimum value of bandgap, thickness, and doping level of the layers are determined to reach maximum efficiency. Moreover, a trap density model is interpolated and applied in the simulations.

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