scholarly journals Influence of photon energy on conductivity of photoconductive semiconductor switches fabricated from semi-insulating GaP

2020 ◽  
Author(s):  
Karol Piwowarski ◽  
Marek Suproniuk ◽  
Paweł Kamiński ◽  
Bogdan Perka ◽  
Roman Kozłowski ◽  
...  
Keyword(s):  
Photon Energy ◽  
Semiconductor Switches ◽  
Insulating Gap

scholarly journals Blocking Characteristics of Photoconductive Switches Based on Semi-Insulating GaP and GaN

2019 ◽  
Vol 25 (4) ◽  
pp. 36-39
Author(s):  
Marek Suproniuk ◽  
Karol Piwowarski ◽  
Bogdan Perka ◽  
Pawel Kaminski ◽  
Roman Kozlowski ◽  
...  
Keyword(s):  
Gallium Phosphide ◽  
Research Work ◽  
Semiconductor Materials ◽  
Photon Flux ◽  
Research Directions ◽  
Semiconductor Switches ◽  
Optimal Values ◽  
Insulating Gap ◽  
Materials Used ◽  
Device Operation

This article presents results of research work aimed at manufacturing photoconductive semiconductor switches (PCSSs) based on semi-insulating (SI) gallium phosphide (GaP) and gallium nitride (GaN). Currently, the work is in progress to determine the optimal values of PCSS parameters. In this article, the parameters of the selected semiconductor materials used for making PCSSs, the device operation principle, and possible areas of use are presented. The paper demonstrates the construction of test PCSSs based on SI GaP and SI GaN and results of blocking characteristics measurements without the illumination, as well as with illumination with a small photon flux. Further research directions are presented also.

Semi-insulating GaP as a material for manufacturing photoconductive semiconductor switches

2019 ◽  
Author(s):  
Marek Suproniuk ◽  
Paweł Kamiński ◽  
Roman Kozłowski ◽  
Marian Teodorczyk ◽  
Aleksandra Mirowska ◽  
...  
Keyword(s):  
Semiconductor Switches ◽  
Insulating Gap

Tunable Resonator Employing Comb-shaped Transmission Line and Semiconductor Switches

2014 ◽  
Vol E97.C (8) ◽  
pp. 795-802 ◽  
Author(s):  
Kunihiro KAWAI ◽  
Daisuke KOIZUMI ◽  
Hiroshi OKAZAKI ◽  
Shoichi NARAHASHI
Keyword(s):  
Transmission Line ◽  
Semiconductor Switches ◽  
Tunable Resonator

MAGNETIC FIELD, PRESSURE AND TEMPERATURE DEPENDENT OPTICAL PROPERTIES IN A GaAs 9.0 P 1.0 QUANTUM DOT

2014 ◽  
Vol 6 (2) ◽  
pp. 1178-1190
Author(s):  
A. JOHN PETER ◽  
Ada Vinolin
Keyword(s):  
Magnetic Field ◽  
Optical Properties ◽  
Quantum Dot ◽  
Field Strength ◽  
Magnetic Field Strength ◽  
Photon Energy ◽  
Nonlinear Optical ◽  
Binding Energies ◽  
Nonlinear Optical Properties ◽  
Optical Rectification

Simultaneous effects of magnetic field, pressure and temperature on the exciton binding energies are found in a 9.0 1.0 6.0 4.0 GaAs P / GaAs P quantum dot. Numerical calculations are carried out taking into consideration of spatial confinement effect. The cylindrical system is taken in the present problem with the strain effects. The electronic properties and the optical properties are found with the combined effects of magnetic field strength, hydrostatic pressure and temperature values. The exciton binding energies and the nonlinear optical properties are carried out taking into consideration of geometrical confinement and the external perturbations.Compact density approach is employed to obtain the nonlinear optical properties. The optical rectification coefficient is obtained with the photon energy in the presence of pressure, temperature and external magnetic field strength. Pressure and temperature dependence on nonlinear optical susceptibilities of generation of second and third order harmonics as a function of incident photon energy are brought out in the influence of magnetic field strength. The result shows that the electronic and nonlinear optical properties are significantly modified by the applications of external perturbations in a 9.0 1.0 6.0 4.0 GaAs P / GaAs P quantum dot.

A Novel Two-phase Soft Starter Used for Three-phase Asynchronous Motors

2020 ◽  
Vol 13 (8) ◽  
pp. 1175-1182
Author(s):  
Jingwen Chen ◽  
Hongshe Dang
Keyword(s):  
Pulse Generation ◽  
Power Module ◽  
Two Phase ◽  
Power Semiconductor ◽  
Starting Current ◽  
Semiconductor Switches ◽  
Soft Starter ◽  
Three Phase ◽  
And Control ◽  
Driving Circuit

Background: Traditional thyristor-based three-phase soft starters of induction motor often suffer from high starting current and heavy harmonics. Moreover, both the trigger pulse generation and driving circuit design are usually complicated. Methods: To address these issues, we propose a novel soft starter structure using fully controlled IGBTs in this paper. Compared to approaches of traditional design, this structure only uses twophase as the input, and each phase is controlled by a power module that is composed of one IGBT and four diodes. Results: Consequently, both driving circuit and control design are greatly simplified due to the requirement of fewer controlled power semiconductor switches, which leads to the reduction of the total cost. Conclusion: Both Matlab/Simulink simulation results and experimental results on a prototype demonstrate that the proposed soft starter can achieve better performances than traditional thyristorbased soft starters for Starting Current (RMS) and harmonics.

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