An SIS-mixer-based amplifier for multi-pixel heterodyne receivers

2020 ◽  
Author(s):  
Yoshinori Uzawa ◽  
Takafumi Kojima ◽  
Yuto Kozuki ◽  
Yasunori Fuji ◽  
Akihira Miyachi ◽  
...  
Keyword(s):  
Sis Mixer ◽  
Heterodyne Receivers

Low-noise integrated balanced SIS mixer for 787–950 GHz

2016 ◽  
Vol 30 (2) ◽  
pp. 024001 ◽  
Author(s):  
Yasunori Fujii ◽  
Takafumi Kojima ◽  
Alvaro Gonzalez ◽  
Shin’ichiro Asayama ◽  
Matthias Kroug ◽  
...  
Keyword(s):  
Low Noise ◽  
Sis Mixer

Laser Local Oscillators for Heterodyne Receivers beyond 2 Terahertz

Frequenz ◽  
2008 ◽  
Vol 62 (5-6) ◽  
pp. 111-117 ◽  
Author(s):  
Heinz-Wilhelm Hübers ◽  
Heiko Richter ◽  
Sergey Pavlov ◽  
Alexei Semenov ◽  
Alessandro Tredicucci ◽  
...  
Keyword(s):  
Local Oscillators ◽  
Heterodyne Receivers ◽  
Laser Local Oscillators

Integrated 1.55 μm photomixer local oscillators for heterodyne receivers at mm wavelengths

2004 ◽  
Author(s):  
Peter G. Huggard ◽  
Luis Azcona ◽  
Alexandre Laisne ◽  
Brian N. Ellison ◽  
Pengbo Shen ◽  
...  
Keyword(s):  
Local Oscillators ◽  
Heterodyne Receivers

scholarly journals Simulating the Behavior of a 230-GHz SIS Mixer Using Multitone Spectral Domain Analysis

2019 ◽  
Vol 9 (6) ◽  
pp. 540-548
Author(s):  
John Daniel Garrett ◽  
Boon Kok Tan ◽  
Faouzi Boussaha ◽  
Christine Chaumont ◽  
Ghassan Yassin
Keyword(s):  
Domain Analysis ◽  
Spectral Domain ◽  
Sis Mixer

650 GHz SIS mixer fabricated on silicon‐on‐insulator substrate

2013 ◽  
Vol 49 (20) ◽  
pp. 1273-1275 ◽  
Author(s):  
B.‐K. Tan ◽  
G. Yassin ◽  
P. Grimes ◽  
K. Jacobs
Keyword(s):  
Silicon On Insulator ◽  
Sis Mixer ◽  
Insulator Substrate

Frequency Bandwidth Adjustment by Precision Post-Processing for a 0.78–0.95 THz Band SIS Mixer

2015 ◽  
Vol 643 ◽  
pp. 157-163
Author(s):  
Akihira Miyachi ◽  
Takafumi Kojima ◽  
Yasunori Fujii ◽  
Masanori Takeda ◽  
Yoshinori Uzawa ◽  
...  
Keyword(s):  
Mass Production ◽  
Noise Temperature ◽  
Back Side ◽  
Frequency Bandwidth ◽  
Post Processing ◽  
Sis Mixer ◽  
Optimal Method ◽  
High Frequencies ◽  
Em Simulation ◽  
The Relationship

In this study, we demonstrate a method for adjusting the frequency bandwidth of a Superconductor-insulator-superconductor (SIS) mixer device by controlling its thickness after microfabrication. We estimate the relationship between SIS mixer device thickness and frequency bandwidth using electromagnetic (EM) simulation. We propose an optimal method for the precision polishing of the back side of the device. We evaluate the noise temperature and measure the frequency bandwidth of SIS mixer devices with different thicknesses. This study presents the adjustment of the frequency bandwidth of a device through controlling its thickness after microfabrication. This technique may improve the yield of SIS mixer device mass production and support the construction of receivers for ultra-high frequencies such as Atacama Large Millimeter/Submillimeter Array (ALMA) Band 10.

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