Proton radiation hardness of x-ray SOI pixel detectors with pinned depleted diode structure

2020 ◽  
Author(s):  
Mitsuki Hayashida ◽  
Takayoshi Kohmura ◽  
Kouichi Hagino ◽  
Kenji Oono ◽  
Kousuke Negishi ◽  
...  
Keyword(s):  
Radiation Hardness ◽  
Diode Structure ◽  
Proton Radiation ◽  
X Ray ◽  
Pixel Detectors

scholarly journals Proton radiation hardness of x-ray SOI pixel sensors with pinned depleted diode structure

2021 ◽  
Vol 7 (03) ◽  
Author(s):  
Mitsuki Hayashida ◽  
Kouichi Hagino ◽  
Takayoshi Kohmura ◽  
Masatoshi Kitajima ◽  
Keigo Yarita ◽  
...  
Keyword(s):  
Radiation Hardness ◽  
Diode Structure ◽  
Proton Radiation ◽  
X Ray ◽  
Pixel Sensors

scholarly journals Proton radiation damage experiment for X-ray SOI pixel detectors

2019 ◽  
Vol 924 ◽  
pp. 457-461 ◽  
Author(s):  
Keigo Yarita ◽  
Takayoshi Kohmura ◽  
Kouichi Hagino ◽  
Taku Kogiso ◽  
Kenji Oono ◽  
...  
Keyword(s):  
Radiation Damage ◽  
Proton Radiation ◽  
X Ray ◽  
Pixel Detectors

Pixel detectors: New detectors for X-ray scattering

2002 ◽  
Vol 12 (6) ◽  
pp. 385-390 ◽  
Author(s):  
J.-F. Bérar ◽  
L. Blanquart ◽  
N. Boudet ◽  
P. Breugnon ◽  
B. Caillot ◽  
...  
Keyword(s):  
X Ray ◽  
X Ray Scattering ◽  
Pixel Detectors ◽  
Ray Scattering

Subpixel resolution in CdTe Timepix3 pixel detectors

2018 ◽  
Vol 25 (6) ◽  
pp. 1650-1657 ◽  
Author(s):  
Mohamad Khalil ◽  
Erik Schou Dreier ◽  
Jan Kehres ◽  
Jan Jakubek ◽  
Ulrik Lund Olsen
Keyword(s):  
Single Photon ◽  
Weighted Average ◽  
European Synchrotron Radiation Facility ◽  
Time Of Arrival ◽  
Pixel Detector ◽  
Step Size ◽  
X Ray ◽  
Pixel Detectors ◽  
Individual Photon ◽  
Subpixel Resolution

Timepix3 (256 × 256 pixels with a pitch of 55 µm) is a hybrid-pixel-detector readout chip that implements a data-driven architecture and is capable of simultaneous time-of-arrival (ToA) and energy (ToT: time-over-threshold) measurements. The ToA information allows the unambiguous identification of pixel clusters belonging to the same X-ray interaction, which allows for full one-by-one detection of photons. The weighted mean of the pixel clusters can be used to measure the subpixel position of an X-ray interaction. An experiment was performed at the European Synchrotron Radiation Facility in Grenoble, France, using a 5 µm × 5 µm pencil beam to scan a CdTe-ADVAPIX-Timepix3 pixel (55 µm × 55 µm) at 8 × 8 matrix positions with a step size of 5 µm. The head-on scan was carried out at four monochromatic energies: 24, 35, 70 and 120 keV. The subpixel position of every single photon in the beam was constructed using the weighted average of the charge spread of single interactions. Then the subpixel position of the total beam was found by calculating the mean position of all photons. This was carried out for all points in the 8 × 8 matrix of beam positions within a single pixel. The optimum conditions for the subpixel measurements are presented with regards to the cluster sizes and beam subpixel position, and the improvement of this technique is evaluated (using the charge sharing of each individual photon to achieve subpixel resolution) versus alternative techniques which compare the intensity ratio between pixels. The best result is achieved at 120 keV, where a beam step of 4.4 µm ± 0.86 µm was measured.

Pixel readout IC for CdTe detectors operating in single photon counting mode with interpixel communication

2022 ◽  
Vol 17 (01) ◽  
pp. C01036
Author(s):  
P. Grybos ◽  
R. Kleczek ◽  
P. Kmon ◽  
A. Krzyzanowska ◽  
P. Otfinowski ◽  
...  
Keyword(s):  
Integrated Circuit ◽  
Single Photon ◽  
Photon Counting ◽  
Recognition Algorithm ◽  
Total Charge ◽  
Readout Integrated Circuit ◽  
Single Photon Counting ◽  
X Ray ◽  
Pixel Detectors ◽  
Photon Counting Mode

Abstract This paper presents a readout integrated circuit (IC) of pixel architecture called MPIX (Multithreshold PIXels), designed for CdTe pixel detectors used in X-ray imaging applications. The MPIX IC area is 9.6 mm × 20.3 mm and it is designed in a CMOS 130 nm process. The IC core is a matrix of 96 × 192 square-shaped pixels of 100 µm pitch. Each pixel contains a fast analog front-end followed by four independently working discriminators and four 12-bit ripple counters. Such pixel architecture allows photon processing one by one and selecting the X-ray photons according to their energy (X-ray colour imaging). To fit the different range of applications the MPIX IC has 8 possible different gain settings, and it can process the X-ray photons of energy up to 154 keV. The MPIX chip is bump-bonded to the CdTe 1.5 mm thick pixel sensor with a pixel pitch of 100 µm. To deal with the charge sharing effect coming from a thick semiconductor pixel sensor, multithreshold pattern recognition algorithm is implemented in the readout IC. The implemented algorithm operates both in the analog domain (to recover the total charge spread between neighboring pixels, when a single X-ray photon hits the border of the pixel) and in the digital domain (to allocate a hit position to a single pixel).

scholarly journals Development of CdTe Pixel Detectors for Energy-Resolved X-ray Diffractions

2019 ◽  
Author(s):  
Hidenori Toyokawa ◽  
Choji Saji ◽  
Morihiro Kawase ◽  
Koji Ohara ◽  
Ayumi Shiro ◽  
...  
Keyword(s):  
X Ray ◽  
Pixel Detectors

Room-temperature X-ray response of cadmium–zinc–telluride pixel detectors grown by the vertical Bridgman technique

2020 ◽  
Vol 27 (2) ◽  
pp. 319-328 ◽  
Author(s):  
Leonardo Abbene ◽  
Fabio Principato ◽  
Gaetano Gerardi ◽  
Antonino Buttacavoli ◽  
Donato Cascio ◽  
...  
Keyword(s):  
Room Temperature ◽  
Cadmium Zinc Telluride ◽  
Photon Counting ◽  
Zinc Telluride ◽  
High Rate ◽  
High Flux ◽  
X Ray ◽  
Pixel Detectors ◽  
Vertical Bridgman ◽  
Cadmium Zinc

In this work, the spectroscopic performances of new cadmium–zinc–telluride (CZT) pixel detectors recently developed at IMEM-CNR of Parma (Italy) are presented. Sub-millimetre arrays with pixel pitch less than 500 µm, based on boron oxide encapsulated vertical Bridgman grown CZT crystals, were fabricated. Excellent room-temperature performance characterizes the detectors even at high-bias-voltage operation (9000 V cm−1), with energy resolutions (FWHM) of 4% (0.9 keV), 1.7% (1 keV) and 1.3% (1.6 keV) at 22.1, 59.5 and 122.1 keV, respectively. Charge-sharing investigations were performed with both uncollimated and collimated synchrotron X-ray beams with particular attention to the mitigation of the charge losses at the inter-pixel gap region. High-rate measurements demonstrated the absence of high-flux radiation-induced polarization phenomena up to 2 × 106 photons mm−2 s−1. These activities are in the framework of an international collaboration on the development of energy-resolved photon-counting systems for high-flux energy-resolved X-ray imaging.

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