Initial results of post-irradiation piezoresponse force microscopy characterization of piezoelectric materials (Conference Presentation)

2020 ◽  
Author(s):  
Pradeep Ramuhalli ◽  
Shawn Reichers ◽  
Andrew Casella ◽  
Joshua Daw
Keyword(s):  
Piezoelectric Materials ◽  
Piezoresponse Force Microscopy ◽  
Force Microscopy ◽  
Post Irradiation ◽  
Microscopy Characterization ◽  
Initial Results

Piezoresponse Force Microscopy Characterization of PTO Thin Films

2009 ◽  
Vol 1186 ◽  
Author(s):  
Alessio Morelli ◽  
Sriram Venkatesan ◽  
George Palasantzas ◽  
Bart J. Kooi ◽  
Jeff De Hosson
Keyword(s):  
Electron Microscopy ◽  
Thin Films ◽  
Transmission Electron Microscopy ◽  
Piezoelectric Properties ◽  
Piezoresponse Force Microscopy ◽  
Force Microscopy ◽  
Transmission Electron ◽  
Film Substrate ◽  
Microscopy Characterization

AbstractThe piezoelectric properties of PTO thin films grown by pulsed laser deposition are investigated with piezoresponse force microscopy and transmission electron microscopy. The as-grown films exhibit upward polarization, and inhomogeneous distribution of piezoelectric characteristics. The data obtained reveal imprint during piezoresponse force microscopy measurements, nonlinearity in the piezoelectric deformation, and limited retention loss. Moreover, transmission electron microscopy shows the presence of defects near the film/substrate interface, which can be associated with the variations of piezoelectric properties.

Characterization of Nanomechanical, Ferroelectric, and Piezoelectric Properties by Nanoindentation and Piezoresponse Force Microscopy of PbTiO3 Thin Films

2013 ◽  
Vol 52 (40) ◽  
pp. 14328-14334 ◽  
Author(s):  
Juan Ramos-Cano ◽  
Mario Miki-Yoshida ◽  
André Marino Gonçalves ◽  
José Antônio Eiras ◽  
Jesús González-Hernández ◽  
...  
Keyword(s):  
Thin Films ◽  
Piezoelectric Properties ◽  
Piezoresponse Force Microscopy ◽  
Force Microscopy ◽  
Ferroelectric And Piezoelectric Properties

Fabrication of Ga-templates Using a Focused Ion Beam

2009 ◽  
Vol 1228 ◽  
Author(s):  
Hao Wang ◽  
Greg C. Hartman ◽  
Joshua Williams ◽  
Jennifer L. Gray
Keyword(s):  
Focused Ion Beam ◽  
Ion Beam ◽  
Processing Conditions ◽  
New Materials ◽  
Force Microscopy ◽  
Atomic Force ◽  
Nitridation Process ◽  
Microscopy Characterization ◽  
Device Technology

AbstractThere are many factors that have the potential to limit significant advances in device technology. These include the ability to arrange materials at shrinking dimensions and the ability to successfully integrate new materials with better properties or new functionalities. To overcome these limitations, the development of advanced processing methods that can organize various combinations of materials at nano-scale dimensions with the necessary quality and reliability is required. We have explored using a gallium focused ion beam (FIB) as a method of integrating highly mismatched materials with silicon by creating template patterns directly on Si with nanoscale resolution. These templates are potentially useful as a means of locally controlling topography at nanoscale dimensions or as a means of locally implanting Ga at specific surface sites. We have annealed these templates in vacuum to study the effects of ion dosage on local Ga concentration and topography. We have also investigated the feasibility of creating Ga nanodots using this method that could eventually be converted to GaN through a nitridation process. Atomic force microscopy and electron microscopy characterization of the resulting structures are shown for a variety of patterning and processing conditions.

Atomic force microscopy characterization of stable faces in cubic C60 and hexagonal C60, 2CCl4 single crystals

1994 ◽  
Vol 179 (3) ◽  
pp. 595-605 ◽  
Author(s):  
Bineta Keita ◽  
Louis Nadjo ◽  
René Céolin ◽  
Viatcheslav Agafonov ◽  
Daniel André ◽  
...  
Keyword(s):  
Atomic Force Microscopy ◽  
Single Crystals ◽  
Force Microscopy ◽  
Atomic Force ◽  
Microscopy Characterization ◽  
Atomic Force Microscopy Characterization
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