EUV mask infrastructure and actinic pattern mask inspection

2020 ◽  
Author(s):  
Ted Liang ◽  
Yoshihiro Tezuka ◽  
Marieke Jager ◽  
Kishore Chakravorty ◽  
Safak Sayan ◽  
...  
Keyword(s):  
Pattern Mask ◽  
Mask Inspection

Plasma-based sources of extreme ultraviolet radiation for lithography and mask inspection

2018 ◽  
Vol 189 (03) ◽  
pp. 323-334 ◽  
Author(s):  
D.B. Abramenko ◽  
P.S. Antsiferov ◽  
D.I. Astakhov ◽  
Aleksandr Yu. Vinokhodov ◽  
Il'ya Yu. Vichev ◽  
...  
Keyword(s):  
Ultraviolet Radiation ◽  
Extreme Ultraviolet ◽  
Mask Inspection ◽  
Extreme Ultraviolet Radiation

Study of advanced mask inspection optics with super-resolution method for next-generation mask fabrication

2009 ◽  
Author(s):  
Ryoichi Hirano ◽  
Masatoshi Hirono ◽  
Riki Ogawa ◽  
Nobutaka Kikuiri ◽  
Kenichi Takahara ◽  
...  
Keyword(s):  
Super Resolution ◽  
Next Generation ◽  
Resolution Method ◽  
Mask Inspection ◽  
Mask Fabrication

Design-Aware Mask Inspection

2012 ◽  
Vol 31 (5) ◽  
pp. 690-702 ◽  
Author(s):  
Abde Ali Kagalwalla ◽  
Puneet Gupta ◽  
Christopher J. Progler ◽  
Steve McDonald
Keyword(s):  
Mask Inspection

Microwave discharge plasma production with resonant cavity for EUV mask inspection tool

2015 ◽  
Vol 54 (12) ◽  
pp. 126701
Author(s):  
Saya Tashima ◽  
Masami Ohnishi ◽  
Waheed Hugrass ◽  
Keita Sugimoto ◽  
Masatugu Sakaguchi ◽  
...  
Keyword(s):  
Discharge Plasma ◽  
Microwave Discharge ◽  
Resonant Cavity ◽  
Plasma Production ◽  
Mask Inspection

Laser-assisted discharge produced plasma (LDP) EUV source for actinic patterned mask inspection (APMI)

2021 ◽  
Author(s):  
Safak Sayan ◽  
Kishore K. Chakravorty ◽  
Yusuke Teramoto ◽  
Takahiro Shirai ◽  
Shunichi Morimoto ◽  
...  
Keyword(s):  
Mask Inspection

Development of element technologies for EUVL

2015 ◽  
Vol 4 (4) ◽  
Author(s):  
Hiroo Kinoshita ◽  
Takeo Watanabe ◽  
Tetsuo Harada
Keyword(s):  
Extreme Ultraviolet ◽  
Random Access ◽  
High Volume ◽  
Development Stage ◽  
Extreme Ultraviolet Lithography ◽  
Applied Physics ◽  
Reflectivity Measurement ◽  
Ultraviolet Lithography ◽  
Mask Inspection ◽  
The University

AbstractThirty years have passed since the first report on extreme ultraviolet lithography (EUVL) was presented at the annual meeting of the Japanese Society of Applied Physics in 1986. This technology is now in the manufacturing development stage. The high-volume manufacturing of dynamic-random-access-memory (DRAM) chips with a line width of 15 nm is expected in 2016. However, there are critical development issues that remain: generating a stand-alone EUV source with a higher power and producing a mask inspection tool for obtaining zero-defect masks. The Center for EUVL at the University of Hyogo was established in 2010. At present, it utilizes various types of equipment, such as an EUV mask defect inspection tool, an interference-lithography system, a device for measuring the thickness of carbon contamination film deposited by resist outgassing, and reflectivity measurement systems.

Verification of optics for the die-to-wafer-like image mask inspection

2008 ◽  
Author(s):  
Akira Takada ◽  
Toru Tojo ◽  
Masato Shibuya
Keyword(s):  
Mask Inspection ◽  
Image Mask
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