3D light interferometry investigation of ink layer formation during intaglio printing

2020 ◽  
Author(s):  
Tetiana Kyrychok ◽  
Olena Korotenko
Keyword(s):  
Layer Formation ◽  
Intaglio Printing

Kinetics of compact layer formation and growth of 1,10-phenanthroline at the electrode surface

1990 ◽  
Vol 87 ◽  
pp. 1597-1607 ◽  
Author(s):  
L Benedetti ◽  
M Borsari ◽  
C Fontanesi ◽  
G Battistuzzi Gavioli
Keyword(s):  
Electrode Surface ◽  
Layer Formation ◽  
Compact Layer ◽  
Kinetics Of

Polipirolo sluoksnio formavimo ypatumų ir urino rūgšties molekulinių įspaudų susidarymo tyrimai

2020 ◽  
Author(s):  
◽  
Linas Sinkevičius
Keyword(s):  
Uric Acid ◽  
Layer Formation

Investigation of polypyrrole layer formation peculiarities and formation of uric acid molecular imprints

TECHNOLOGICAL CONTROL OF THE CONTACT PRESSURE ON THE CYLINDRICAL SUBSTRATE FROM THE SIDE OF THE COATING ADDITIVELY FORMED ON ITS EXTERNAL SURFACE

2020 ◽  
Author(s):  
Dmitriy Parshin
Keyword(s):  
Stress State ◽  
Contact Pressure ◽  
Mechanical Model ◽  
External Surface ◽  
Layer By Layer ◽  
Layer Formation ◽  
Technological Control ◽  
Manufactured Products ◽  
Arbitrary Thickness

The article gives an example of controlling the stress state parameters of additively manufactured products. The study was carried out on the basis of a developed non-classical mechanical model of the process of layer-by-layer formation of a coating of arbitrary thickness on a cylindrical substrate. The model is based on modern concepts of the mechanics of continuously growing bodies and allows one to obtain fairly simple analytical dependencies. On the basis of the latter, the problem of technological control of the evolution of contact pressure at the substrate – coating interface is solved in the article. A number of practically significant conclusions have been made.

EXPLOSIVE CLADDING OF ALUMINIUM 5052-STAINLESS STEEL 304

2019 ◽  
Vol 14 (3) ◽  
Author(s):  
Saravanan S ◽  
Murugan G
Keyword(s):  
Stainless Steel ◽  
Interfacial Microstructure ◽  
Bend Angle ◽  
Flyer Plate ◽  
Layer Formation ◽  
Molten Layer ◽  
Explosive Cladding ◽  
Plate Velocity ◽  
Stainless Steel 304 ◽  
Loading Ratio

This study addresses the effect of process parameters viz., loading ratio (mass of explosive/mass of flyer plate) and preset angle on dynamic bend angle, collision velocity and flyer plate velocity in dissimilar explosive cladding. In addition, the variation in interfacial microstructure and mechanical strength of aluminium 5052-stainless steel 304 explosive clads is reported. The interface exhibits a characteristic undulating interface with a continuous molten layer formation. The interfacial amplitude increases with the loading ratio and preset angle. Maximum hardness is observed at regions closer to the interface

Statistics of layer formation in Mersa Matruh, Egypt

1988 ◽  
Vol 24 (7) ◽  
pp. 381 ◽  
Author(s):  
H.N. Kheirallah ◽  
M.R.M. Rizk
Keyword(s):  
Layer Formation

scholarly journals Melt season duration and ice layer formation on the Greenland ice sheet, 2000–2004

2007 ◽  
Vol 112 (F4) ◽  
Author(s):  
Libo Wang ◽  
Martin Sharp ◽  
Benoit Rivard ◽  
Konrad Steffen
Keyword(s):  
Ice Sheet ◽  
Greenland Ice Sheet ◽  
Layer Formation

scholarly journals Critical View on Buffer Layer Formation and Monolayer Graphene Properties in High-Temperature Sublimation

2021 ◽  
Vol 11 (4) ◽  
pp. 1891
Author(s):  
Vallery Stanishev ◽  
Nerijus Armakavicius ◽  
Chamseddine Bouhafs ◽  
Camilla Coletti ◽  
Philipp Kühne ◽  
...  
Keyword(s):  
High Temperature ◽  
Charge Carrier ◽  
Buffer Layer ◽  
Free Charge Carrier ◽  
Monolayer Graphene ◽  
Free Charge ◽  
Layer Formation ◽  
Free Hole ◽  
Sublimation Growth ◽  
Insulating Substrates

In this work we have critically reviewed the processes in high-temperature sublimation growth of graphene in Ar atmosphere using closed graphite crucible. Special focus is put on buffer layer formation and free charge carrier properties of monolayer graphene and quasi-freestanding monolayer graphene on 4H–SiC. We show that by introducing Ar at higher temperatures, TAr, one can shift the formation of the buffer layer to higher temperatures for both n-type and semi-insulating substrates. A scenario explaining the observed suppressed formation of buffer layer at higher TAr is proposed and discussed. Increased TAr is also shown to reduce the sp3 hybridization content and defect densities in the buffer layer on n-type conductive substrates. Growth on semi-insulating substrates results in ordered buffer layer with significantly improved structural properties, for which TAr plays only a minor role. The free charge density and mobility parameters of monolayer graphene and quasi-freestanding monolayer graphene with different TAr and different environmental treatment conditions are determined by contactless terahertz optical Hall effect. An efficient annealing of donors on and near the SiC surface is suggested to take place for intrinsic monolayer graphene grown at 2000 ∘C, and which is found to be independent of TAr. Higher TAr leads to higher free charge carrier mobility parameters in both intrinsically n-type and ambient p-type doped monolayer graphene. TAr is also found to have a profound effect on the free hole parameters of quasi-freestanding monolayer graphene. These findings are discussed in view of interface and buffer layer properties in order to construct a comprehensive picture of high-temperature sublimation growth and provide guidance for growth parameters optimization depending on the targeted graphene application.

Sign in / Sign up

Export Citation Format

Share Document