Controllability of refractive index of optical thin films and its application in antireflective coatings of multi-junction solar cells

2019 ◽  
Author(s):  
mengqi shi ◽  
linjie bi
Keyword(s):  
Thin Films ◽  
Refractive Index ◽  
Solar Cells ◽  
Antireflective Coatings

a-SiCxNy:H thin films for applications in solar cells as passivation and antireflective coatings

2016 ◽  
Author(s):  
Barbara Swatowska ◽  
Stanisława Kluska ◽  
Gabriela Lewińska ◽  
Julia Golańska ◽  
Tomasz Stapiński
Keyword(s):  
Thin Films ◽  
Solar Cells ◽  
Antireflective Coatings

Sol-gel Preparation of Graded-refractive-index Antireflective Coatings for GaInP/GaAs/Ge Triple-junction Solar Cells

2016 ◽  
Vol 45 (8) ◽  
pp. 831001
Author(s):  
田冰涛 TIAN Bing-tao ◽  
王晓栋 WANG Xiao-dong ◽  
牛彦彦 NIU Yan-yan ◽  
曹媛媛 CAO Yuan-yuan ◽  
冯建斌 FENG Jian-bin ◽  
...  
Keyword(s):  
Refractive Index ◽  
Solar Cells ◽  
Triple Junction ◽  
Sol Gel ◽  
Antireflective Coatings ◽  
Gel Preparation

Effect of Speed on Silica Antireflective Coatings by Dipping Coating

2012 ◽  
Vol 512-515 ◽  
pp. 1597-1600
Author(s):  
Rui Min Jin ◽  
Zhi Duan Cai ◽  
Li Min Cang ◽  
Tao Yan ◽  
Shu Zeng Li
Keyword(s):  
Thin Films ◽  
Refractive Index ◽  
Sol Gel ◽  
Refractive Index Change ◽  
Tetraethyl Orthosilicate ◽  
Experimental Results ◽  
Antireflective Coatings ◽  
Index Change ◽  
Coating Technique

Sol-gel thin films prepared by dipping coating technique, sol–gel derived bulk were prepared from constant water (H2O)/tetraethyl-orthosilicate (TEOS) ratio, dipping coating were carried out at different dipping speed 100mm/min, 200mm/min, 300mm/min, 400mm/min, 500mm/min respectively. The films are characterized by ellipsometer and SEM respectively. The experimental results show the thickness of films are become bigger and bigger with the dipping speed increasing.The refractive index change is not obvious.

Effect of Rotating Speed on Properties of Antireflective Coatings

2011 ◽  
Vol 181-182 ◽  
pp. 443-446
Author(s):  
Rui Min Jin ◽  
Xin Feng Guo ◽  
Zhi Duan Cai ◽  
Li Min Cang ◽  
Yan Tao ◽  
...  
Keyword(s):  
Thin Films ◽  
Refractive Index ◽  
High Speed ◽  
Sol Gel ◽  
Tetraethyl Orthosilicate ◽  
Experimental Results ◽  
Antireflective Coatings ◽  
Low Speed ◽  
Rotating Speed ◽  
Coating Technique

Sol-gel thin films prepared by rotating coating technique, sol–gel derived bulk was prepared from constant water (H2O)/tetraethyl-orthosilicate (TEOS) ratio, rotating coating was carried out at different rotating speed 1000r/min (high speed) and 800r/min (low speed), 1500r/min (high speed) and 800r/min (low speed),2000r/min (high speed) and 800r/min (low speed),2500r/min (high speed) and 800r/min (low speed) respectively. The films were characterized by ellipsometer and SEM respectively. The experimental results show the thickness and refractive index of films are become smaller and smaller with the rotating speeds increasing.

Optical and electrical properties of solution processable TiOx thin films for solar cell and sensor applications

2011 ◽  
Vol 1352 ◽  
Author(s):  
Jiguang Li ◽  
Lin Pu ◽  
Mool C. Gupta
Keyword(s):  
Thin Film ◽  
Thin Films ◽  
Electrical Resistivity ◽  
Refractive Index ◽  
Solar Cells ◽  
Solar Cell ◽  
Electrical Properties ◽  
Thermal Annealing ◽  
Electrical Resistance ◽  
Optical And Electrical Properties

ABSTRACTRecently, few tens of nanometer thin films of TiOx have been intensively studied in applications for organic solar cells as optical spacers, environmental protection and hole blocking. In this paper we provide initial measurements of optical and electrical properties of TiOx thin films and it’s applications in solar cell and sensor devices. The TiOx material was made through hydrolysis of the precursor synthesized from titanium isopropoxide, 2-methoxyethanol, and ethanolamine. The TiOx thin films of thickness between 20 nm to 120 nm were obtained by spin coating process. The refractive index of TiOx thin films were measured using an ellipsometric technique and an optical reflection method. At room temperature, the refractive index of TiOx thin film was found to be 1.77 at a wavelength of 600 nm. The variation of refractive index under various thermal annealing conditions was also studied. The increase in refractive index with high temperature thermal annealing process was observed, allowing the opportunity to obtain refractive index values between 1.77 and 2.57 at a wavelength 600 nm. The refractive index variation is due to the TiOx phase and density changes under thermal annealing.The electrical resistance was measured by depositing a thin film of TiOx between ITO and Al electrode. The electrical resistivity of TiOx thin film was found to be 1.7×107 Ω.cm as measured by vertical transmission line method. We have also studied the variation of electrical resistivity with temperature. The temperature coefficient of electrical resistance for 60 nm TiOx thin film was demonstrated as - 6×10-3/°C. A linear temperature dependence of resistivity between the temperature values of 20 – 100 °C was observed.The TiOx thin films have been demonstrated as a low cost solution processable antireflection layer for Si solar cells. The results indicate that the TiOx layer can reduce the surface reflection of the silicon as low as commonly used vacuum deposited Si3N4 thin films.

SnO2 Thin Films Prepared by APCVD for Organic Solar Cells Application

2013 ◽  
Vol 685 ◽  
pp. 166-173 ◽  
Author(s):  
Djedjiga Hatem ◽  
Mohammed Said Belkaid
Keyword(s):  
Thin Films ◽  
Refractive Index ◽  
Solar Cells ◽  
Sheet Resistance ◽  
Active Layer ◽  
Organic Solar Cells ◽  
Transparent Electrode ◽  
Absorption Efficiency ◽  
Interfacial Layers ◽  
Glass Substrates

Abstract: The amelioration of the efficiency of photovoltaic conversion in organic solar cells can be obtained by minimizing losses in reflection and absorption in the transparent electrode/active layer interface involving increased absorption efficiency in the active layer which can be achieved by the use of TCOs with special optical and electrical properties. Tin oxide SnO2 thin films have been prepared by APCVD method using the SnCl2 as a starting material. The surface morphology of the films deposited on glass substrates were investigated by scanning electron microscopy (SEM).The ellipsometry was used to determinate the refractive index for the films deposited at 480°C and the -sheet resistance was measured using the Four-Point probe. Transmittance of SnO2 films deposited on ITO was measured by UV-visible spectroscopy. SnO2 films prepared during 11 minutes present a sheet resistance of 19.57 Ωcm-2, transmittance higher than 80% and refractive index of 1.75 can be used as interfacial layer in organic solar cells application to minimize the reflectivity. The total reflectivity of SnO2/P3HT: PCBM obtained by using these films is less than 3%. SnO2 films can also be used as interfacial layers in inverted solar cells application.

Antireflective Coatings with Nanostructured TiO2 Thin Films for Silicon Solar Cells

2012 ◽  
Vol 21 ◽  
pp. 89-94 ◽  
Author(s):  
Elena Manea ◽  
Catalin Corneliu Parvulescu ◽  
Munizer Purica ◽  
Elena Budianu ◽  
Florin Comanescu
Keyword(s):  
Thin Films ◽  
Solar Cells ◽  
Silicon Solar Cells ◽  
Antireflective Coating ◽  
Radiation Wavelength ◽  
Spectral Transmittance ◽  
Antireflective Coatings ◽  
Glass Substrates ◽  
Transparent Substrate

This paper presents the preparation and characterization of nanostructured TiO2 films designated to the integration of antireflective (AR) layers into the fabrication process of the silicon solar cells. The nanostructured titanium dioxide (TiO2) layers have been obtained by the anodization of the Ti layer deposited by sputtering technique on glass substrates and silicon wafers. The obtained TiO2 films were optically characterized using the Spectroscopic Ellipsometry (SE) and the values of the refractive index are in a range of 1.66-1.76 at 632 nm radiation wavelength. The transmittance of 90 nm TiO2 thin films deposited on transparent substrate, evaluated by the spectrophotometry method, is over 70%. The TiO2 band gap of 3.3 eV was evaluated from the spectral transmittance characteristic. Silicon solar cells with various AR coatings of TiO2, SiO2 and SiO2 - TiO2 have been fabricated. The optoelectrical characterization proved that the output maximum power (Pmax) for the solar cell with a 90 nm TiO2 layer is with 28% greater than Pmax for the solar cells with SiO2 as AR layer and with 15.5 % greater than Pmax for the solar cells having a two-layer antireflective coating of SiO2 - TiO2.

A thiourea additive-based quadruple cation lead halide perovskite with an ultra-large grain size for efficient perovskite solar cells

Nanoscale ◽  
2019 ◽  
Vol 11 (45) ◽  
pp. 21824-21833 ◽  
Author(s):  
Jyoti V. Patil ◽  
Sawanta S. Mali ◽  
Chang Kook Hong
Keyword(s):  
Thin Films ◽  
Grain Size ◽  
Solar Cells ◽  
Power Conversion Efficiency ◽  
Conversion Efficiency ◽  
Power Conversion ◽  
Perovskite Solar Cells ◽  
Inorganic Perovskite ◽  
Halide Perovskite ◽  
Lead Halide

Controlling the grain size of the organic–inorganic perovskite thin films using thiourea additives now crossing 2 μm size with >20% power conversion efficiency.

Sign in / Sign up

Export Citation Format

Share Document